Synthesis and Performance of Novel Polymer Resists for 193 nm Immersion Lithography (2006-2008)
Abstract
This project aims to develop novel polymers for immersion lithography. The trillion dollar semiconductor industry relies on continual increases in the density of transistors on integrated circuits. Achieving this depends on smaller feature sizes during the lithographic process, by improvement in optics and by moving to lower wavelength photons. In the past 12 months, the industry has embarked upon a shift in technology to immersion lithography. Essential elements of this technology are increased refractive indices of the polymer resist, and a clear understanding of the interactions of the resists with immersion fluids. Future exploitation of immersion lithography will rely on the novel high RI polymers developed in this project.
