Epitaxial growth of Zn-VI/III-N nanowire-based structures for future device applications (2009-2011)
Abstract
Epitaxial semiconductor nanowires have been a recent global research focus as key building blocks for future nanodevices. The aim of this project is (1) to epitaxially architect Zn-VI and III-N nanowire-based structures (including nanowire heterostructures and magnetic nanowires), ultimately on Si, to extend their potential applications in wider fields, (2) to determine the growth nature of epitaxial nanowires by coupling their growth with detailed nanostructural and nanochemical characterisations, and (3) to build the structure-property links of grown nanowire structures. The new knowledge and innovative concepts developed from this project will significantly impact on the design, development and manufacturing of nanowire-based devices.
