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2011 Conference Publication Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopyJackson, H. E., Perera, S., Pemasiri, K., Smith, L. M., Yarrison-Rice, J., Kang, J. H., Gao, Q., Tan, H. H., Jagadish, C., Guo, Y. and Zou, J. (2011). Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy. 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, 25-30 July 2010. College Park, MD United States: American Institute of Physics. doi: 10.1063/1.3666463 |
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2011 Conference Publication Growth and characterization of III-V compound semiconductor nanowiresGao, Q., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, J., Johnston, M. and Jagadish, C. (2011). Growth and characterization of III-V compound semiconductor nanowires. 16th Opto-Electronics and Communications Conference, OECC 2011, Kaohsiung, Taiwan, 4-8 July 2011. Piscataway, NJ United States: I E E E. |
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2010 Conference Publication Temperature and bias-assisted transport properties of LSMO/AlO/CoFeB magnetic tunnel junctionRizwan, Syed, Guo, S. M., Wang, Y., Wen, Z. C., Zhang, S., Zhao, Y. G., Zou, J. and Han, X. F. (2010). Temperature and bias-assisted transport properties of LSMO/AlO/CoFeB magnetic tunnel junction. doi: 10.1109/TMAG.2010.2045743 |
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2010 Conference Publication Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVDGuo, Y., Zou, J., Joyce, H. J., Gao, Q., Tan, H. H. and Jagadish, C. (2010). Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699774 |
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2010 Conference Publication Growth of ZnS heterostructures for optoelectronic applicationsChen, Zhigang, Lu, G. Q. and Zou, J. (2010). Growth of ZnS heterostructures for optoelectronic applications. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMADD 2010), Canberra, Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699747 |
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2010 Conference Publication Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substratesKang, Jung-Hyun, Gao, Qiang, Joyce, Hannah J., Tan, Hark Hoe, Jagadish, Chennupati, Kim, Yong, Guo, Yanan, Xu, Hongyi, Zou, Jin, Fickenscher, Melodie A., Smith, Leigh M., Jackson, Howard E. and Yarrison-Rice, Jan M. (2010). Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates. 2010 10th IEEE Conference on Nanotechnology, NANO 2010, Ilsan, Gyeonggi-Do, South Korea, 17-20 August 2010. Piscataway, NJ, U.S.A.: Institute of Electrical and Electronic Engineers (IEEE). doi: 10.1109/NANO.2010.5697783 |
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2010 Conference Publication ZnS nanostructures for field emittersChen, Zhi-Gang, Zou, Jin and Lu, (Max) Gaoqing (2010). ZnS nanostructures for field emitters. 2010 International Conference on Nanoscience and Nanotechnology (ICONN 2010), Sydney, Australia, 22-26 Feb 2010. Piscataway, NJ, United States: IEEE. doi: 10.1109/ICONN.2010.6045161 |
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2010 Conference Publication Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratioPaiman, S., Gao, Q., Joyce, H.J., Tan, H.H., Jagadish, C., Kim, Y., Guo, Y. and Zou, J. (2010). Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699767 |
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2010 Conference Publication Thickness dependence of magnetic and transport properties in organic-CoFe discontinuous multilayersWang, W. X., Wang, Y. P., Zhang, X. G., Wang, Y., Zou, J. and Han, X. F. (2010). Thickness dependence of magnetic and transport properties in organic-CoFe discontinuous multilayers. 11th Joint MMM-Intermag Conference, Washington, D.C., United States, 18-22 January 2010. College Park, MD, United States: American Institute of Physics. doi: 10.1063/1.3359438 |
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2010 Conference Publication Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substratesKang, Jung-Hyun, Gao, Qiang, Joyce, Hannah J., Kim, Yong, Guo, Yanan, Xu, Hongyi, Zou, Jin, Fickenscher, Melody A., Smith, Leigh M., Jackson, Howard E., Yarrison-Rice, J. M., Tan, Hark Hoe and Jagadish, Chennupati (2010). Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699778 |
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2010 Conference Publication PVDF nano-composites prepared by phase inversion technique and interface fine tuneHou, Meng, Tang, Xue-Gang, Zou, Jin, Truss, Rowan and Yang, Ming-Bo (2010). PVDF nano-composites prepared by phase inversion technique and interface fine tune. 7th Asian-Australasian Conference on Composite Materials 2010, ACCM 2010, , , November 15, 2010-November 18, 2010. ACCM-7 Organizing Committee. |
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2010 Conference Publication Growth of GaAs nanowires using different Au catalystsXu, H.Y., Wang, Y., Guo, Y.N., Zou, J., Gao, Q., Tan, H.H. and Jagadish, C. (2010). Growth of GaAs nanowires using different Au catalysts. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699766 |
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2010 Conference Publication InP/InGaAs core-shell nanowire heterostructures: Growth and characterisationRamesh, V., Gao, Q., Tan, H. H., Paiman, S., Guo, Y. N., Zou, J. and Jagadish, C. (2010). InP/InGaAs core-shell nanowire heterostructures: Growth and characterisation. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, 12-15 December 2010. Piscataway, NJ, U.S.A.: IEEE Xplore. doi: 10.1109/COMMAD.2010.5699792 |
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2010 Conference Publication PVDF Nano-composites prepared by phase inversion technique and interface fine tuneHou, Meng, Tang, Xue-Gang, Zou, Jin, Truss, Rowan W. and Yang, Ming-Bo (2010). PVDF Nano-composites prepared by phase inversion technique and interface fine tune. The 7th Asian-Australian Conference on Composite Materials, Taipei, Taiwan, 15-18 November 2010. |
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2009 Conference Publication Effect of the crystal structure on the optical properties of InP nanowiresPaiman, S., Gao, Q., Tan, H. H., Jagadish, C., Pemasiri, K., Montazeri, M., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zhang, X. and Zou, J. (2009). Effect of the crystal structure on the optical properties of InP nanowires. 2009 IEEE LEOS Annual Meeting Conference, LEOS '09, Belek-Antalya, Turkey, 4-8 October 2009. Piscataway, NJ United States: I E E E. doi: 10.1109/LEOS.2009.5343092 |
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2009 Conference Publication III-V Compound Semiconductor NanowiresPaiman, S., Joyce, H. J., Kang, J. H., Gao, Q., Tan, H. H., Kim, Y., Zhang, X., Zou, J. and Jagadish, C. (2009). III-V Compound Semiconductor Nanowires. 9th IEEE Conference on Nanotechnology (IEEE-NANO), Genoa Italy, Jul 26-30, 2009. NEW YORK: IEEE. |
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2009 Conference Publication III-V compound semiconductor nanowiresJoyce, H. J., Paiman, S., Gao, Q., Tan, H. Hoe, Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J. and Jagadish, C. (2009). III-V compound semiconductor nanowires. 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, Traverse City, MI United States, 2-5 June 2009. Piscataway, NJ United States: I E E E. doi: 10.1109/NMDC.2009.5167572 |
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2009 Conference Publication Fermi level depinning of Ge Schottky contacts using single crystalline MgOZhoua, Yi, Han, Wei, Wang, Yong, Xiu, Faxian, Zou, Jin, Kawakami, R. K. and Wang, K. L. (2009). Fermi level depinning of Ge Schottky contacts using single crystalline MgO. 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD United States, 9-11 December 2009. Piscataway, NJ United States: I E E E. doi: 10.1109/ISDRS.2009.5378328 |
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2009 Conference Publication The Raman and IR spectroscopy study on the transition metal in ZnOLi, Y.J., Zhang, B., Wang, Y., Zou, J. and Lu, W. (2009). The Raman and IR spectroscopy study on the transition metal in ZnO. 34th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2009, Busan, Korea, 21-25 September 2009. Piscataway, NJ United States: I E E E. doi: 10.1109/ICIMW.2009.5325569 |
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2009 Conference Publication Epitaxy of III-V semiconductor nanowires towards optoelectronic devicesGao, Q., Joyce, H. J., Paiman, S., Tan, H. Hoe, Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J. and Jagadish, C. (2009). Epitaxy of III-V semiconductor nanowires towards optoelectronic devices. 14th OptoElectronics and Communications Conference, OECC 2009, Hong Kong, China, 13-17 July 2009. Piscataway, NJ United States: I E E E. doi: 10.1109/OECC.2009.5219756 |
