|
1998 Conference Publication TEM study of intermetallic phases in 55Al-Zn coatingsZou, J, Liao, XZ, Duan, XF, Durandet, Y and Cockayne, DJH (1998). TEM study of intermetallic phases in 55Al-Zn coatings. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD. |
|
1997 Conference Publication {111} and {311} rod-like defects in silicon ion implanted siliconChou, C. T., Cockayne, D. J. H., Zou, J., Kringhøj, P. and Jagadish, C (1997). {111} and {311} rod-like defects in silicon ion implanted silicon. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, 8-11 December 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610131 |
|
1997 Conference Publication Misfit dislocations nucleated from the surface in strained-layer heterostructuresCockayne, D. J. H. and Zou, J. (1997). Misfit dislocations nucleated from the surface in strained-layer heterostructures. Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD 96, Canberra, Australia, 8-11 December 1996. New York ; Piscataway, NJ: Institute of Electrical and Electronic Engineers : IEEE Service Center,. doi: 10.1109/COMMAD.1996.610129 |
|
1997 Conference Publication The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructuresGlasko, JM, Zou, J, Cockayne, DJH, Gerald, JF, Kringhoj, P and Elliman, RG (1997). The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures. Symposium on Defects in Electronic Materials II, at the Combined Meeting of the Materials-Research-Society / International Conference on Electronic Materials, Boston Ma, Dec 02-06, 1996. WARRENDALE: MATERIALS RESEARCH SOCIETY. |
|
1997 Conference Publication Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAsRussellharriott, J. J., Zou, J., Cockayne, D. J. H., Moon, A. R. and Usher, B. F. (1997). Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, 8-11 December 1996. Piscataway, NJ, United States: IEEE. doi: 10.1109/COMMAD.1996.610091 |
|
1996 Conference Publication The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructuresGlasko, JM, Zou, J, Cockayne, DJH, Gerald, JF and Elliman, RG (1996). The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610092 |
|
1996 Conference Publication Strain relief and interfacial structure in ZnSe layers grown on GaAs substratesZhang, Y, Usher, BF, Riley, JD, Huang, , Zou, J, Leckey, RCG and Wolfframm, D (1996). Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610154 |
|
1996 Conference Publication V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealingKim, Y, Yuan, S, Leon, R, Clark, A, Jagadish, C, Johnston, MB, Burke, P, Gal, M, Zou, J, Cockayne, D, Phillips, MR and Kalceff, MAS (1996). V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610106 |
|
1996 Conference Publication Ion implantation processing of GaN epitaxial layersTan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ and Yuan, C (1996). Ion implantation processing of GaN epitaxial layers. 1st ECS Symposium on III-V Nitride Materials and Processes, Los Angeles Ca, May 06-08, 1996. PENNINGTON: ELECTROCHEMICAL SOCIETY INC. |
|
1995 Conference Publication Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructuresZou, J. and Cockayne, D. J. H. (1995). Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructures. 2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance, Ballarat, Australia, 1-5 November 1993. Switzerland, Germany: Trans Tech Publications. doi: 10.4028/www.scientific.net/MSF.189-190.279 |
|
1994 Conference Publication TEM studies of misfit dislocations in strained-layer heterostructuresZou, J and Cockayne, Djh (1994). TEM studies of misfit dislocations in strained-layer heterostructures. 13th International Congress on Electron Microscopy, Paris France, Jul 17-22, 1994. LES ULIS: MATERIALS RESEARCH SOCIETY. |
