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2002 Conference Publication Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structureGao, Q., Tan, H. H., Jagadish, C., Sun, B. Q., Gal, M., Ouyang, L. and Zou, J. (2002). Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structure. Optoelectronic and Microelecttronic Materials and Devices, University of Sydney, NSW, Australia, 11 - 13 December, 2002. NEW YORK: Institute of Electrical and Electronics Engineers. doi: 10.1109/COMMAD.2002.1237238 |
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2002 Conference Publication Formation of misfit dislocations form island surface in Ge(Si)/Si quantum dotsZou, J. (2002). Formation of misfit dislocations form island surface in Ge(Si)/Si quantum dots. COMMAD 2002, Sydney, Australia, 11-13 December, 2002. Piscataway: IEEE. |
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2002 Conference Publication Atomistic structure changes in monocrystalline silicon during nano-sliding and nano-indentationZarudi, I., Zou, J. and Zhang, L. C. (2002). Atomistic structure changes in monocrystalline silicon during nano-sliding and nano-indentation. 10th Foresight Conference on Molecular Nanotechnology, Bethesda, Washington, USA, 11-13 October, 2002. Online: Foresight Institute. |
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2002 Conference Publication Structural electrical and optical properties of MeV ion implanted InPCarmody, C., Tan, H. H., Jagadish, C., Zou, J., Dao, L. and Gal, M. (2002). Structural electrical and optical properties of MeV ion implanted InP. Optoelectronic and Microelecttronic Materials and Devices, Sydney, 9 - 113 December, 2002. NEW YORK: IEEE. doi: 10.1109/COMMAD.2002.1237296 |
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2002 Conference Publication Composition distributions in Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J. and Cockayne, David J. H. (2002). Composition distributions in Ge(Si)/Si(001) quantum dots. 15th International Congress on Electron Microscopy (ICEM), Durban, South Africa, 1-6 September, 2002. |
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2002 Conference Publication Strain relaxation in self-assembled Ge(Si)/Si quantum dotsZou, J., Liao, X. Z. and Cockayne, D. J. H. (2002). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. 15th International Congress on Electron Microscopy, Durban, South Africa, 1-6 September 2002. Onderstepoort, South Africa: Microscopy Society of Southern Africa. |
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2002 Conference Publication Microstructure and optical properties of Ge(Si) dots grown on SiWan, Jun, Tong, Song, Jiang, Zhimei, Jin, Gaolong, Lou, Y. H., Liu, Jian-Lin, Liao, Xiaozhou, Zou, Jin and Wang, Kang L. (2002). Microstructure and optical properties of Ge(Si) dots grown on Si. Quantum Dot Devices and Computing, San Jose, CA, USA, 21 January, 2002. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING. doi: 10.1117/12.460806 |
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2002 Conference Publication 314 HRTEM Studies of Plastic Deformation in Silicon Wafers due to Micro IndentationZarudi, I., Zou, J. and Zhang, L (2002). 314 HRTEM Studies of Plastic Deformation in Silicon Wafers due to Micro Indentation. Materials Processing, Honolulu, Hawaii, 14 - 18 October, 2002. |
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2000 Conference Publication Composition distribution in Ge(Si) islands grown on Si (001) substrateZou, J., Liao, X. Z. and Cockayne, D. J. H. (2000). Composition distribution in Ge(Si) islands grown on Si (001) substrate. COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, 11-13 December, 2000. |
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2000 Conference Publication Transmission electron microscopy investigation of semiconductor quantum dotsLiao, XZ, Zou, J and Cockayne, DJH (2000). Transmission electron microscopy investigation of semiconductor quantum dots. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE. doi: 10.1109/SIM.2000.939230 |
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2000 Conference Publication Ion implantation into GaN: Opportunities and problemsKucheyev, SO, Williams, JS, Jagadish, C, Zou, J, Toth, M, Phillips, MR and Li, G (2000). Ion implantation into GaN: Opportunities and problems. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE. |
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2000 Conference Publication HREM investigation of planar defects in ion-implanted GaNZou, J., Wang, Y. G., Kucheyev, S. O., Williams, J. S., Jagadish, C. and Li, G. (2000). HREM investigation of planar defects in ion-implanted GaN. COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, 11-13 December, 2000. |
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2000 Conference Publication Ion-implanted GaAs for ultrafast saturable absorber applicationsLederer, MJ, Luther-Davies, B, Tan, HH, Jagadish, C, Haiml, M, Siegner, U, Keller, U, Zou, J and Cockayne, DJH (2000). Ion-implanted GaAs for ultrafast saturable absorber applications. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE. doi: 10.1109/SIM.2000.939213 |
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1999 Conference Publication Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dotsLeon, R, Lobo, C, Liao, XZ, Zou, J, Cockayne, DJH and Fafard, S (1999). Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots. Symposium on Growth Instabilities and Decomposit ion During Heteroepitaxy at the MRS Fall Meeting, Boston Massachusetts, Dec, 1998. LAUSANNE: Elsevier Sequoia SA. doi: 10.1016/S0040-6090(99)00472-1 |
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1999 Conference Publication Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformationWellman, J, George, T, Leon, R, Fafard, S, Zou, J and Cockayne, DJH (1999). Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation. Symposium on Epitaxial Growth-Principles and Applications, San Francisco Ca, Apr 05-08, 1999. WARRENDALE: MATERIALS RESEARCH SOCIETY. doi: 10.1557/PROC-570-175 |
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1998 Conference Publication TEM study of compositional profile in AlGaAs/GaAs quantum wellsZou, J., Cai, D. Q., Cockayne, D. J. H. and Jagadish, C. (1998). TEM study of compositional profile in AlGaAs/GaAs quantum wells. 14th International Congress on Electron Microscopy, Cancun Mexico, 31 August - 4 September 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Conference Publication TEM study of intermetallic phases in 55Al-Zn coatingsZou, J, Liao, XZ, Duan, XF, Durandet, Y and Cockayne, DJH (1998). TEM study of intermetallic phases in 55Al-Zn coatings. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Conference Publication Oval defects in InGaAs/GaAs heterostructuresRussell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H. and Usher, B. F. (1998). Oval defects in InGaAs/GaAs heterostructures. 14th International Congress on Electron Microscopy, Cancun, Mexico, 31 August - 4 September 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Conference Publication Ordering, tunability, and stability in the formation of semiconductor quantum dotsLeon, R, Stevens-Kalceff, M, Zou, J, Lobo, C and Cockayne, DJH (1998). Ordering, tunability, and stability in the formation of semiconductor quantum dots. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Conference Publication TEM investigations of Si ion-implanted GaNZou, J., Cockayne, D. J. H., Duan, X. F., Tan, H. H., Williams, J. S., Pearton, S. J. and Stall, S. A. (1998). TEM investigations of Si ion-implanted GaN. 14th International Congress on Electron Microscopy, Cancún, Mexico, 31 August-4 September 1998. Bristol ; Philadelphia: Institute of Physics Publishing. |
