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2004 Journal Article [0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthdayLiao, X. Z., Zou, J., Cockayne, D. J. H. and Matsumura, S. (2004). [0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthday. Ultramicroscopy, 98 (2-4), 239-247. doi: 10.1016/j.ultramic.2003.08.017 |
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2004 Journal Article The R8-BC8 phases and crystal growth in monocrystalline silicon under microindentation with a spherical indenterZarudi, I, Zhang, LC, Zou, J and Vodenitcharova, T (2004). The R8-BC8 phases and crystal growth in monocrystalline silicon under microindentation with a spherical indenter. Journal of Materials Research, 19 (1), 332-337. doi: 10.1557/jmr.2004.19.1.332 |
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2004 Journal Article Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical propertiesGao, Q, Tan, HH, Jagadish, C, Sun, BQ, Gal, M, Ouyang, L and Zou, J (2004). Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties. Journal of Crystal Growth, 264 (1-3), 92-97. doi: 10.1016/j.jcrysgro.2003.12.068 |
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2004 Journal Article Lattice damage produced in GaN by swift heavy ionsKucheyev, S. O., Timmers, H., Zou, J., Williams, J. S., Jagadish, C. and Li, G. (2004). Lattice damage produced in GaN by swift heavy ions. Journal of Applied Physics, 95 (10), 5360-5365. doi: 10.1063/1.1703826 |
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2004 Journal Article Amorphous structures induced in monocrystalline silicon by mechanical loadingZarudi, I., Zou, J., McBride, W. and Zhang, L. C. (2004). Amorphous structures induced in monocrystalline silicon by mechanical loading. Applied Physics Letters, 85 (6), 932-934. doi: 10.1063/1.1779344 |
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2004 Journal Article Dynamic annealing in III-nitrides under ion bombardmentKucheyev, SO, Williams, JS, Zou, J and Jagadish, C (2004). Dynamic annealing in III-nitrides under ion bombardment. Journal of Applied Physics, 95 (6), 3048-3054. doi: 10.1063/1.1649459 |
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2003 Journal Article Multilayered carbon films for tribological applicationsMcKenzie, DR, Tarrant, RN, Bilek, MMM, Ha, T, Zou, J, McBride, WE, Cockayne, DJH, Fujisawa, N, Swain, MV, James, NL, Woodard, JC and McCulloch, DG (2003). Multilayered carbon films for tribological applications. Diamond And Related Materials, 12 (2), 178-184. doi: 10.1016/S0925-9635(03)00020-7 |
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2003 Journal Article Microstructures of phases in indented silicon: A high resolution characterizationZarudi, I, Zou, J and Zhang, LC (2003). Microstructures of phases in indented silicon: A high resolution characterization. Applied Physics Letters, 82 (6), 874-876. doi: 10.1063/1.1544429 |
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2003 Journal Article Epitaxially grown GaAsN random laserSun, BQ, Gal, M, Gao, Q, Tan, HH, Jagadish, C, Puzzer, T, Ouyang, L and Zou, J (2003). Epitaxially grown GaAsN random laser. Journal of Applied Physics, 93 (10), 5855-5858. doi: 10.1063/1.1568533 |
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2003 Journal Article Ion-beam-produced structural defects in ZnOKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Evans, C., Nelson, A. J. and Hamza, A. V. (2003). Ion-beam-produced structural defects in ZnO. Physical Review B, 67 (9), 94115-1-94115-11. doi: 10.1103/PhysRevB.67.094115 |
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2002 Journal Article Ion-beam-produced damage and its stability in AlN filmsKucheyev, SO, Williams, JS, Zou, J, Jagadish, C, Pophristic, M, Guo, S, Ferguson, IT and Manasreh, MO (2002). Ion-beam-produced damage and its stability in AlN films. Journal of Applied Physics, 92 (7), 3554-3558. doi: 10.1063/1.1501746 |
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2002 Journal Article Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growthZou, J., Liao, X. Z., Cockayne, D. J. H. and Jiang, Z. M. (2002). Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth. Applied Physics Letters, 81 (11), 1996-1998. doi: 10.1063/1.1506414 |
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2002 Journal Article Structural disorder in ion-implanted AlxGa1-xNKucheyev, S. O., Williams, J. S., Zou, J., Li, G., Jagadish, C., Manasreh, M. O., Pophristic, M., Guo, S. and Ferguson, I. T. (2002). Structural disorder in ion-implanted AlxGa1-xN. Applied Physics Letters, 80 (5), 787-789. doi: 10.1063/1.1445478 |
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2002 Journal Article Large-quantity production of high-yield boron nitride nanotubesChen, Y, Conway, M, Williams, JS and Zou, J (2002). Large-quantity production of high-yield boron nitride nanotubes. Journal of Materials Research, 17 (8), 1896-1899. doi: 10.1557/JMR.2002.0281 |
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2002 Journal Article Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical propertiesLeon, R, Chaparro, S, Johnson, SR, Navarro, C, Jin, X, Zhang, YH, Siegert, J, Marcinkevicius, S, Liao, XZ and Zou, J (2002). Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties. Journal of Applied Physics, 91 (9), 5826-5830. doi: 10.1063/1.1467963 |
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2002 Journal Article Blistering of H-implanted GaNKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2002). Blistering of H-implanted GaN. Journal of Applied Physics, 91 (6), 3928-3930. doi: 10.1063/1.1430533 |
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2002 Journal Article Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imagingCai, DQ, Zou, J, Chen, GB, Lu, W, Chen, XS and Ringer, SP (2002). Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imaging. Scripta Materialia, 47 (4), 279-283. doi: 10.1016/S1359-6462(02)00144-6 |
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2002 Journal Article Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2002). Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots. Physical Review B, 65 (15), 153306 - 1-153306 - 4. doi: 10.1103/PhysRevB.65.153306 |
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2002 Journal Article Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperatureKucheyev, SO, Williams, JS, Zou, J, Li, G, Jagadish, C and Titov, AI (2002). Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 190 (1-4), 782-786. doi: 10.1016/S0168-583X(01)01309-X |
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2001 Journal Article Effects of interdiffusion on the band alignment of GeSi dotsWan, J., Luo, Y. H., Jiang, Z. M., Jin, G., Liu, J. L., Wang, K. L., Liao, X. Z. and Zou, J. (2001). Effects of interdiffusion on the band alignment of GeSi dots. Applied Physics Letters, 79 (13), 1980-1982. doi: 10.1063/1.1405152 |
