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2004

Journal Article

Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties

Gao, Q, Tan, HH, Jagadish, C, Sun, BQ, Gal, M, Ouyang, L and Zou, J (2004). Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties. Journal of Crystal Growth, 264 (1-3), 92-97. doi: 10.1016/j.jcrysgro.2003.12.068

Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties

2004

Journal Article

Lattice damage produced in GaN by swift heavy ions

Kucheyev, S. O., Timmers, H., Zou, J., Williams, J. S., Jagadish, C. and Li, G. (2004). Lattice damage produced in GaN by swift heavy ions. Journal of Applied Physics, 95 (10), 5360-5365. doi: 10.1063/1.1703826

Lattice damage produced in GaN by swift heavy ions

2004

Journal Article

Amorphous structures induced in monocrystalline silicon by mechanical loading

Zarudi, I., Zou, J., McBride, W. and Zhang, L. C. (2004). Amorphous structures induced in monocrystalline silicon by mechanical loading. Applied Physics Letters, 85 (6), 932-934. doi: 10.1063/1.1779344

Amorphous structures induced in monocrystalline silicon by mechanical loading

2004

Journal Article

Dynamic annealing in III-nitrides under ion bombardment

Kucheyev, SO, Williams, JS, Zou, J and Jagadish, C (2004). Dynamic annealing in III-nitrides under ion bombardment. Journal of Applied Physics, 95 (6), 3048-3054. doi: 10.1063/1.1649459

Dynamic annealing in III-nitrides under ion bombardment

2004

Journal Article

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Gao, Q., Tan, H.H., Jagadish, C., Sun, B.Q., Gal, M., Ouyang, L. and Zou, J. (2004). Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers. Applied Physics Letters, 84 (14), 2536-2538. doi: 10.1063/1.1697628

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

2004

Journal Article

Atomistic structure of monocrystalline silicon in surface nano-modification

Zarudi, I, Cheong, WCD, Zou, J and Zhang, LC (2004). Atomistic structure of monocrystalline silicon in surface nano-modification. Nanotechnology, 15 (1), 104-107. doi: 10.1088/0957-4484/15/1/020

Atomistic structure of monocrystalline silicon in surface nano-modification

2004

Journal Article

Microstructure of MmM(5)/Mg multi-layer hydrogen storage films prepared by magnetron sputtering

Ouyang, LZ, Wang, H, Zhu, M, Zou, J and Chung, CY (2004). Microstructure of MmM(5)/Mg multi-layer hydrogen storage films prepared by magnetron sputtering. Microscopy Research And Technique, 64 (4), 323-329. doi: 10.1002/jemt.20089

Microstructure of MmM(5)/Mg multi-layer hydrogen storage films prepared by magnetron sputtering

2004

Journal Article

Dimerlike positional correlation and resonant transmission of electromagnetic waves in aperiodic dielectric multilayers

Peng, R. W., Liu, Y. M., Huang, X. Q., Qiu, F., Wang, M., Hu, A., Jiang, S. S., Feng, D., Ouyang, L. Z. and Zou, J. (2004). Dimerlike positional correlation and resonant transmission of electromagnetic waves in aperiodic dielectric multilayers. Physical Review B, 69 (16) 165109, 165109-1-165109-7. doi: 10.1103/PhysRevB.69.165109

Dimerlike positional correlation and resonant transmission of electromagnetic waves in aperiodic dielectric multilayers

2003

Journal Article

Microstructures of phases in indented silicon: A high resolution characterization

Zarudi, I, Zou, J and Zhang, LC (2003). Microstructures of phases in indented silicon: A high resolution characterization. Applied Physics Letters, 82 (6), 874-876. doi: 10.1063/1.1544429

Microstructures of phases in indented silicon: A high resolution characterization

2003

Journal Article

Epitaxially grown GaAsN random laser

Sun, BQ, Gal, M, Gao, Q, Tan, HH, Jagadish, C, Puzzer, T, Ouyang, L and Zou, J (2003). Epitaxially grown GaAsN random laser. Journal of Applied Physics, 93 (10), 5855-5858. doi: 10.1063/1.1568533

Epitaxially grown GaAsN random laser

2003

Journal Article

Ion-beam-produced structural defects in ZnO

Kucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Evans, C., Nelson, A. J. and Hamza, A. V. (2003). Ion-beam-produced structural defects in ZnO. Physical Review B, 67 (9), 94115-1-94115-11. doi: 10.1103/PhysRevB.67.094115

Ion-beam-produced structural defects in ZnO

2003

Journal Article

Multilayered carbon films for tribological applications

McKenzie, DR, Tarrant, RN, Bilek, MMM, Ha, T, Zou, J, McBride, WE, Cockayne, DJH, Fujisawa, N, Swain, MV, James, NL, Woodard, JC and McCulloch, DG (2003). Multilayered carbon films for tribological applications. Diamond And Related Materials, 12 (2), 178-184. doi: 10.1016/S0925-9635(03)00020-7

Multilayered carbon films for tribological applications

2002

Journal Article

Ion-beam-produced damage and its stability in AlN films

Kucheyev, SO, Williams, JS, Zou, J, Jagadish, C, Pophristic, M, Guo, S, Ferguson, IT and Manasreh, MO (2002). Ion-beam-produced damage and its stability in AlN films. Journal of Applied Physics, 92 (7), 3554-3558. doi: 10.1063/1.1501746

Ion-beam-produced damage and its stability in AlN films

2002

Journal Article

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth

Zou, J., Liao, X. Z., Cockayne, D. J. H. and Jiang, Z. M. (2002). Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth. Applied Physics Letters, 81 (11), 1996-1998. doi: 10.1063/1.1506414

Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth

2002

Journal Article

Structural disorder in ion-implanted AlxGa1-xN

Kucheyev, S. O., Williams, J. S., Zou, J., Li, G., Jagadish, C., Manasreh, M. O., Pophristic, M., Guo, S. and Ferguson, I. T. (2002). Structural disorder in ion-implanted AlxGa1-xN. Applied Physics Letters, 80 (5), 787-789. doi: 10.1063/1.1445478

Structural disorder in ion-implanted AlxGa1-xN

2002

Journal Article

Blistering of H-implanted GaN

Kucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2002). Blistering of H-implanted GaN. Journal of Applied Physics, 91 (6), 3928-3930. doi: 10.1063/1.1430533

Blistering of H-implanted GaN

2002

Journal Article

Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imaging

Cai, DQ, Zou, J, Chen, GB, Lu, W, Chen, XS and Ringer, SP (2002). Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imaging. Scripta Materialia, 47 (4), 279-283. doi: 10.1016/S1359-6462(02)00144-6

Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imaging

2002

Journal Article

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

Liao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2002). Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots. Physical Review B, 65 (15), 153306 - 1-153306 - 4. doi: 10.1103/PhysRevB.65.153306

Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

2002

Journal Article

Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature

Kucheyev, SO, Williams, JS, Zou, J, Li, G, Jagadish, C and Titov, AI (2002). Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 190 (1-4), 782-786. doi: 10.1016/S0168-583X(01)01309-X

Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature

2002

Journal Article

Large-quantity production of high-yield boron nitride nanotubes

Chen, Y, Conway, M, Williams, JS and Zou, J (2002). Large-quantity production of high-yield boron nitride nanotubes. Journal of Materials Research, 17 (8), 1896-1899. doi: 10.1557/JMR.2002.0281

Large-quantity production of high-yield boron nitride nanotubes