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1999 Journal Article Role of implantation-induced defects on the response time of semiconductor saturable absorbersTan, H. H., Jagadish, C., Lederer, M. J., Luther-Davies, B., Zou, J., Cockayne, D. J. H., Haiml, M., Siegner, U. and Keller, U. (1999). Role of implantation-induced defects on the response time of semiconductor saturable absorbers. Applied Physics Letters, 75 (10), 1437-1439. doi: 10.1063/1.124718 |
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1999 Journal Article Ensemble interactions in strained semiconductor quantum dotsLeon, R, Marcinkevicius, S, Liao, XZ, Zou, J, Cockayne, DJH and Fafard, S (1999). Ensemble interactions in strained semiconductor quantum dots. Physical Review B, 60 (12), R8517-R8520. doi: 10.1103/PhysRevB.60.R8517 |
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1999 Journal Article Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dotsLiao, XZ, Zou, J, Cockayne, DJH, Leon, R and Lobo, C (1999). Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots. Physical Review Letters, 82 (25), 5148-5151. doi: 10.1103/PhysRevLett.82.5148 |
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1999 Journal Article Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrateZou, J, Liao, XZ, Cockayne, DJH and Leon, R (1999). Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate. Physical Review B, 59 (19), 12279-12282. doi: 10.1103/PhysRevB.59.12279 |
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1999 Journal Article Dislocation-induced changes in quantum dots: step alignment and radiative emissionLeon, R., Okuno, J. O., Lawton, R. A., Stevens-Kalceff, M., Phillips, M. R., Zou, J., Cockayne, D. J. H. and Lobo, C. (1999). Dislocation-induced changes in quantum dots: step alignment and radiative emission. Applied Physics Letters, 74 (16), 2301-2303. doi: 10.1063/1.123831 |
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1999 Journal Article Depth profiling of GaN by cathodoluminescence microanalysisFleischer, K., Toth, M., Phillips, M. R., Zou, J., Li, G. and Chua, S. J. (1999). Depth profiling of GaN by cathodoluminescence microanalysis. Applied Physics Letters, 74 (8), 1114-1116. doi: 10.1063/1.123460 |
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1999 Journal Article Nonlinear optical properties of ion-implanted GaAsLederer, M. J., Luther-Davies, B., Tan, H. H., Jagadish, C., Haiml, M., Siegner, U., Keller, U. and Zou, J. (1999). Nonlinear optical properties of ion-implanted GaAs. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 151-153. |
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1999 Journal Article Ion irradiation of GeSi/Si strained-layer heterostructuresGlasko, J. M., Elliman, R. G., Zou, J., Cockayne, D. J.H. and Fitz Gerald, J. D. (1999). Ion irradiation of GeSi/Si strained-layer heterostructures. Materials Research Society Symposium - Proceedings, 540, 55-65. |
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1999 Journal Article TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wellsZou, J., Cai, D. Q., Cockayne, D. J.H., Yuan, S. and Jagadish, C. (1999). TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 358-360. |
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1999 Journal Article Transmission electron microscopy determination of quantum dot profileLiao, X. Z., Zou, J., Duan, X. F., Cockayne, D. J.H., Leon, R. and Lobo, C. (1999). Transmission electron microscopy determination of quantum dot profile. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 106-108. |
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1999 Journal Article Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopyRussell-Harriott, J. J., Moon, A. R., Zou, J., Cockayne, D. J H and Usher, B. F. (1999). Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 287-289. |
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1999 Journal Article Defects formed during 1 MeV Si ion-irradiation of GeSi/Si strained-layer heterostructures at elevated temperaturesGlasko, J. M., Elliman, R. G., Zou, J., Cockayne, D. J.H. and Fitz Gerald, J. D. (1999). Defects formed during 1 MeV Si ion-irradiation of GeSi/Si strained-layer heterostructures at elevated temperatures. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148 (1-4), 206-210. doi: 10.1016/S0168-583X(98)00887-8 |
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1998 Journal Article A new type of dissociated misfit dislocation in [001] ZnTe/GaAs strained-layer heterostructuresHan, P. D. and Zou, J. (1998). A new type of dissociated misfit dislocation in [001] ZnTe/GaAs strained-layer heterostructures. Applied Physics Letters, 72 (19), 2424-2426. doi: 10.1063/1.121374 |
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1998 Journal Article Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperatureGlasko, J. M., Zou, J., Cockayne, D. J. H. and Fitz Gerald, J. D. (1998). Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature. Applied Physics Letters, 73 (6), 838-840. doi: 10.1063/1.122018 |
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1998 Journal Article Annealing of ion implanted gallium nitrideTan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Zolper, J. C. and Stall, R. A. (1998). Annealing of ion implanted gallium nitride. Applied Physics Letters, 72 (10), 1190-1192. doi: 10.1063/1.121030 |
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1998 Journal Article Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopyRussell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H. and Usher, B. F. (1998). Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy. Applied Physics Letters, 73 (26), 3899-3901. doi: 10.1063/1.122929 |
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1998 Journal Article Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dotsLiao, X. Z., Zou, J., Duan, X. F., Cockayne, D. J. H., Leon, R. and Lobo, C. (1998). Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots. Physical review. B, Condensed matter and materials physics, 58 (8), R4235-R4237. doi: 10.1103/PhysRevB.58.R4235 |
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1998 Journal Article Comments on "Characterization of the Fe-Al interfacial layer in a commercial hot-dip galvanized coating"Liao, XZ and Zou, J (1998). Comments on "Characterization of the Fe-Al interfacial layer in a commercial hot-dip galvanized coating". Isij International, 38 (5), 506-506. doi: 10.2355/isijinternational.38.506 |
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1998 Journal Article Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wellsYuan, S., Kim, Y., Tan, H. H., Jagadish, C., Burke, P. T., Dao, L. V., Gal, M., Chan, M. C. Y., Li, E. H., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1998). Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells. Journal of Applied Physics, 83 (3), 1305-1311. doi: 10.1063/1.366830 |
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1998 Journal Article Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting TransformationLeon, R., Lobo, C., Zou, J. and Cockayne, D. J. H. (1998). Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting Transformation. Physical Review Letters, 81 (12), 2486-2489. doi: 10.1103/PhysRevLett.81.2486 |
