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1999 Journal Article Transmission electron microscopy determination of quantum dot profileLiao, X. Z., Zou, J., Duan, X. F., Cockayne, D. J.H., Leon, R. and Lobo, C. (1999). Transmission electron microscopy determination of quantum dot profile. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 106-108. |
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1999 Journal Article Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopyRussell-Harriott, J. J., Moon, A. R., Zou, J., Cockayne, D. J H and Usher, B. F. (1999). Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 287-289. |
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1999 Journal Article Defects formed during 1 MeV Si ion-irradiation of GeSi/Si strained-layer heterostructures at elevated temperaturesGlasko, J. M., Elliman, R. G., Zou, J., Cockayne, D. J.H. and Fitz Gerald, J. D. (1999). Defects formed during 1 MeV Si ion-irradiation of GeSi/Si strained-layer heterostructures at elevated temperatures. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 148 (1-4), 206-210. doi: 10.1016/S0168-583X(98)00887-8 |
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1999 Journal Article Nonlinear optical properties of ion-implanted GaAsLederer, M. J., Luther-Davies, B., Tan, H. H., Jagadish, C., Haiml, M., Siegner, U., Keller, U. and Zou, J. (1999). Nonlinear optical properties of ion-implanted GaAs. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 151-153. |
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1999 Journal Article Ion irradiation of GeSi/Si strained-layer heterostructuresGlasko, J. M., Elliman, R. G., Zou, J., Cockayne, D. J.H. and Fitz Gerald, J. D. (1999). Ion irradiation of GeSi/Si strained-layer heterostructures. Materials Research Society Symposium - Proceedings, 540, 55-65. |
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1998 Journal Article A new type of dissociated misfit dislocation in [001] ZnTe/GaAs strained-layer heterostructuresHan, P. D. and Zou, J. (1998). A new type of dissociated misfit dislocation in [001] ZnTe/GaAs strained-layer heterostructures. Applied Physics Letters, 72 (19), 2424-2426. doi: 10.1063/1.121374 |
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1998 Journal Article Comments on "Characterization of the Fe-Al interfacial layer in a commercial hot-dip galvanized coating"Liao, XZ and Zou, J (1998). Comments on "Characterization of the Fe-Al interfacial layer in a commercial hot-dip galvanized coating". Isij International, 38 (5), 506-506. doi: 10.2355/isijinternational.38.506 |
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1998 Journal Article Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wellsYuan, S., Kim, Y., Tan, H. H., Jagadish, C., Burke, P. T., Dao, L. V., Gal, M., Chan, M. C. Y., Li, E. H., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1998). Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells. Journal of Applied Physics, 83 (3), 1305-1311. doi: 10.1063/1.366830 |
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1998 Journal Article Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting TransformationLeon, R., Lobo, C., Zou, J. and Cockayne, D. J. H. (1998). Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting Transformation. Physical Review Letters, 81 (12), 2486-2489. doi: 10.1103/PhysRevLett.81.2486 |
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1998 Journal Article Annealing of ion implanted gallium nitrideTan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Zolper, J. C. and Stall, R. A. (1998). Annealing of ion implanted gallium nitride. Applied Physics Letters, 72 (10), 1190-1192. doi: 10.1063/1.121030 |
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1998 Journal Article Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperatureGlasko, J. M., Zou, J., Cockayne, D. J. H. and Fitz Gerald, J. D. (1998). Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature. Applied Physics Letters, 73 (6), 838-840. doi: 10.1063/1.122018 |
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1998 Journal Article Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopyRussell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H. and Usher, B. F. (1998). Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy. Applied Physics Letters, 73 (26), 3899-3901. doi: 10.1063/1.122929 |
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1998 Journal Article Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dotsLiao, X. Z., Zou, J., Duan, X. F., Cockayne, D. J. H., Leon, R. and Lobo, C. (1998). Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots. Physical review. B, Condensed matter and materials physics, 58 (8), R4235-R4237. doi: 10.1103/PhysRevB.58.R4235 |
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1997 Journal Article Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxyCockayne, D. J. H., Moon, A. R., Russell-Harriott, J. J. and Zou, J. (1997). Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy. Micron, 28 (4), 309-312. doi: 10.1016/S0968-4328(97)00027-9 |
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1997 Journal Article Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxyZou, J., Cockayne, D. J. H. and Russell-Harriott, J. J. (1997). Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 70 (23), 3134-3136. doi: 10.1063/1.119112 |
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1997 Journal Article Electrical and structural analysis of high-dose Si implantation in GaNZolper, JC, Tan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ, Crawford, MH and Karlicek, RF (1997). Electrical and structural analysis of high-dose Si implantation in GaN. Applied Physics Letters, 70 (20), 2729-2731. doi: 10.1063/1.119254 |
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1997 Journal Article Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealingYuan, S., Kim, Y., Jagadish, C., Burke, P. T., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1997). Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing. Applied Physics Letters, 70 (10), 1269-1271. doi: 10.1063/1.118549 |
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1997 Journal Article Diffraction behaviour of three-component fibonacci Ta/Al multilayer filmsJiang, S. S., Peng, R. W., Hu, A., Zou, J., Cockayne, D. J. H. and Sikorski, A. (1997). Diffraction behaviour of three-component fibonacci Ta/Al multilayer films. Journal of Applied Crystallography, 30 (2), 114-117. doi: 10.1107/S0021889896010916 |
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1997 Journal Article Ion beam induced damage in InP during heavy-ion elastic recoil detection analysisWalker, S. R., Johnston, P. N., Bubb, I. F., Stannard, W. B., Zhou, Jin, Jamieson, D. N., Dooley, S. P., Cohen, D. D. and Dytlewski, N. (1997). Ion beam induced damage in InP during heavy-ion elastic recoil detection analysis. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 130 (1-4), 166-170. doi: 10.1016/s0168-583x(97)00167-5 |
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1996 Journal Article Preferred orientation in carbon films induced by energetic condensationYin, Y, Zou, J and Mckenzie, DR (1996). Preferred orientation in carbon films induced by energetic condensation. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 119 (4), 587-590. doi: 10.1016/S0168-583X(96)00467-3 |
