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2000 Journal Article Damage buildup in GaN under ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Damage buildup in GaN under ion bombardment. Physical Review B, 62 (11), 7510-7522. doi: 10.1103/PhysRevB.62.7510 |
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2000 Journal Article Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structuresLiu, XQ, Li, N, Li, ZF, Lu, W, Shen, SC, Fu, Y, Willander, M, Tan, HH, Jagadish, C and Zou, J (2000). Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 39 (9A), 5124-5127. doi: 10.1143/JJAP.39.5124 |
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2000 Journal Article Composition and its impact on shape evolution in dislocated Ge(Si)/Si islandsLiao, X. Z., Zou, J., Cockayne, D. J. H., Jiang, Z. M., Wang, X. and Leon, R. (2000). Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands. Applied Physics Letters, 77 (9), 1304-1306. doi: 10.1063/1.1290384 |
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2000 Journal Article Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconWong-Leung, J, Fatima, S, Jagadish, C, Fitz Gerald, JD, Chou, CT, Zou, J and Cockayne, DJH (2000). Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon. Journal of Applied Physics, 88 (3), 1312-1318. doi: 10.1063/1.373819 |
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2000 Journal Article Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopyRussell, JJ, Zou, J, Moon, AR and Cockayne, DJH (2000). Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy. Journal of Applied Physics, 88 (3), 1307-1311. doi: 10.1063/1.373818 |
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2000 Journal Article Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dotsLobo, C, Perret, N, Morris, D, Zou, J, Cockayne, DJH, Johnston, MB, Gal, M and Leon, R (2000). Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots. Physical Review B, 62 (4), 2737-2742. doi: 10.1103/PhysRevB.62.2737 |
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2000 Journal Article Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)Leon, R., Wellman, J., Liao, X. Z., Zou, J. and Cockayne, D. J. H. (2000). Adatom condensation and quantum dot sizes in InGaAs/GaAs (001). Applied Physics Letters, 76 (12), 1558-1560. doi: 10.1063/1.126095 |
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2000 Journal Article Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wireFu, Y, Willander, M, Lu, W, Liu, XQ, Shen, SC, Jagadish, C, Gal, M, Zou, J and Cockayne, DJH (2000). Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire. Physical Review B, 61 (12), 8306-8311. doi: 10.1103/PhysRevB.61.8306 |
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2000 Journal Article Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealingLiu, XQ, Lu, W, Chen, XS, Shen, SC, Tan, HH, Yuan, S, Jagadish, C, Johnston, MB, Dao, LV, Gal, M, Zou, J and Cockayne, DJH (2000). Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing. Journal of Applied Physics, 87 (3), 1566-1568. doi: 10.1063/1.372051 |
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2000 Journal Article Surface disordering and nitrogen loss in GaN under ion bombardmentKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Toth, M., Phillips, M. R., Tan, H. H., Li, G. and Pearton, S. J. (2000). Surface disordering and nitrogen loss in GaN under ion bombardment. Materials Research Society Symposium-Proceedings, 622, T791-T796. |
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1999 Journal Article Inhibited carrier transfer in ensembles of isolated quantum dotsLobo, C, Leon, R, Marcinkevicius, S, Yang, W, Sercel, PC, Liao, XZ, Zou, J and Cockayne, DJH (1999). Inhibited carrier transfer in ensembles of isolated quantum dots. Physical Review B, 60 (24), 16647-16651. doi: 10.1103/PhysRevB.60.16647 |
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1999 Journal Article Strain relaxation by alloying effects in Ge islands grown on Si(001)Liao, XZ, Zou, J, Cockayne, DJH, Qin, J, Jiang, ZM, Wang, X and Leon, R (1999). Strain relaxation by alloying effects in Ge islands grown on Si(001). Physical Review B, 60 (23), 15605-15608. doi: 10.1103/PhysRevB.60.15605 |
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1999 Journal Article Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealingLiu, X. Q., Lu, W., Li, Z. F., Chen, Y. D., Shen, S. C., Fu, Y., Willander, M., Tan, H. H., Yuan, S., Jagadish, C., Zou, J. and Cockayne, D. J. H. (1999). Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing. Applied Physics Letters, 75 (21), 3339-3341. doi: 10.1063/1.125344 |
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1999 Journal Article Role of implantation-induced defects on the response time of semiconductor saturable absorbersTan, H. H., Jagadish, C., Lederer, M. J., Luther-Davies, B., Zou, J., Cockayne, D. J. H., Haiml, M., Siegner, U. and Keller, U. (1999). Role of implantation-induced defects on the response time of semiconductor saturable absorbers. Applied Physics Letters, 75 (10), 1437-1439. doi: 10.1063/1.124718 |
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1999 Journal Article Ensemble interactions in strained semiconductor quantum dotsLeon, R, Marcinkevicius, S, Liao, XZ, Zou, J, Cockayne, DJH and Fafard, S (1999). Ensemble interactions in strained semiconductor quantum dots. Physical Review B, 60 (12), R8517-R8520. doi: 10.1103/PhysRevB.60.R8517 |
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1999 Journal Article Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dotsLiao, XZ, Zou, J, Cockayne, DJH, Leon, R and Lobo, C (1999). Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots. Physical Review Letters, 82 (25), 5148-5151. doi: 10.1103/PhysRevLett.82.5148 |
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1999 Journal Article Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrateZou, J, Liao, XZ, Cockayne, DJH and Leon, R (1999). Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate. Physical Review B, 59 (19), 12279-12282. doi: 10.1103/PhysRevB.59.12279 |
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1999 Journal Article Dislocation-induced changes in quantum dots: step alignment and radiative emissionLeon, R., Okuno, J. O., Lawton, R. A., Stevens-Kalceff, M., Phillips, M. R., Zou, J., Cockayne, D. J. H. and Lobo, C. (1999). Dislocation-induced changes in quantum dots: step alignment and radiative emission. Applied Physics Letters, 74 (16), 2301-2303. doi: 10.1063/1.123831 |
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1999 Journal Article Depth profiling of GaN by cathodoluminescence microanalysisFleischer, K., Toth, M., Phillips, M. R., Zou, J., Li, G. and Chua, S. J. (1999). Depth profiling of GaN by cathodoluminescence microanalysis. Applied Physics Letters, 74 (8), 1114-1116. doi: 10.1063/1.123460 |
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1999 Journal Article Nonlinear optical properties of ion-implanted GaAsLederer, M. J., Luther-Davies, B., Tan, H. H., Jagadish, C., Haiml, M., Siegner, U., Keller, U. and Zou, J. (1999). Nonlinear optical properties of ion-implanted GaAs. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, 151-153. |
