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2002 Journal Article Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2002). Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots. Physical Review B, 65 (15), 153306 - 1-153306 - 4. doi: 10.1103/PhysRevB.65.153306 |
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2002 Journal Article Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperatureKucheyev, SO, Williams, JS, Zou, J, Li, G, Jagadish, C and Titov, AI (2002). Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 190 (1-4), 782-786. doi: 10.1016/S0168-583X(01)01309-X |
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2002 Journal Article Large-quantity production of high-yield boron nitride nanotubesChen, Y, Conway, M, Williams, JS and Zou, J (2002). Large-quantity production of high-yield boron nitride nanotubes. Journal of Materials Research, 17 (8), 1896-1899. doi: 10.1557/JMR.2002.0281 |
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2002 Journal Article Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical propertiesLeon, R, Chaparro, S, Johnson, SR, Navarro, C, Jin, X, Zhang, YH, Siegert, J, Marcinkevicius, S, Liao, XZ and Zou, J (2002). Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties. Journal of Applied Physics, 91 (9), 5826-5830. doi: 10.1063/1.1467963 |
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2002 Journal Article Blistering of H-implanted GaNKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2002). Blistering of H-implanted GaN. Journal of Applied Physics, 91 (6), 3928-3930. doi: 10.1063/1.1430533 |
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2002 Journal Article Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imagingCai, DQ, Zou, J, Chen, GB, Lu, W, Chen, XS and Ringer, SP (2002). Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imaging. Scripta Materialia, 47 (4), 279-283. doi: 10.1016/S1359-6462(02)00144-6 |
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2001 Journal Article Effects of interdiffusion on the band alignment of GeSi dotsWan, J., Luo, Y. H., Jiang, Z. M., Jin, G., Liu, J. L., Wang, K. L., Liao, X. Z. and Zou, J. (2001). Effects of interdiffusion on the band alignment of GeSi dots. Applied Physics Letters, 79 (13), 1980-1982. doi: 10.1063/1.1405152 |
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2001 Journal Article Annealing effects on the microstructure of Ge/Si(001) quantum dotsLiao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2001). Annealing effects on the microstructure of Ge/Si(001) quantum dots. Applied Physics Letters, 79 (9), 1258-1260. doi: 10.1063/1.1398615 |
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2001 Journal Article Implantation-produced structural damage in InxGa1-xNKucheyev, S. O., Williams, J. S., Zou, J., Pearton, S. J. and Nakagawa, Y. (2001). Implantation-produced structural damage in InxGa1-xN. Applied Physics Letters, 79 (5), 602-604. doi: 10.1063/1.1388881 |
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2001 Journal Article Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturesKucheyev, S. O., Williams, J. S., Zou, J., Jagadish, C. and Li, G. (2001). Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures. Applied Physics Letters, 78 (10), 1373-1375. doi: 10.1063/1.1347010 |
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2001 Journal Article Self-ion-induced swelling of germaniumStritzker, B, Elliman, RG and Zou, J (2001). Self-ion-induced swelling of germanium. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175, 193-196. doi: 10.1016/S0168-583X(00)00597-8 |
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2001 Journal Article Ge/Si interdiffusion in the GeSi dots and wetting layersWan, J, Luo, YH, Jiang, ZM, Jin, G, Liu, JL, Wang, KL, Liao, XZ and Zou, J (2001). Ge/Si interdiffusion in the GeSi dots and wetting layers. Journal of Applied Physics, 90 (8), 4290-4292. doi: 10.1063/1.1403667 |
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2001 Journal Article The morphology and composition of quantum dotsCockayne, DJH, Liao, XZ and Zou, J (2001). The morphology and composition of quantum dots. Microscopy of Semiconducting Materials 2001 (169), 77-83. |
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2001 Journal Article Effect of ion species on the accumulation of ion-beam damage in GaNKucheyev, SO, Williams, JS, Jagadish, C, Zou, J, Li, G and Titov, AI (2001). Effect of ion species on the accumulation of ion-beam damage in GaN. Physical Review B, 6403 (3), art. no.-035202. doi: 10.1103/PhysRevB.64.035202 |
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2001 Journal Article Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structuresLiu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C and Zou, J (2001). Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures. Journal of Nanoscience And Nanotechnology, 1 (4), 389-392. doi: 10.1166/jnn.2001.064 |
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2001 Journal Article Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wireFu, Y, Willander, M, Liu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001). Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire. Journal of Applied Physics, 89 (4), 2351-2356. doi: 10.1063/1.1339857 |
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2001 Journal Article Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast imagesLiao, XZ, Zou, J, Cockayne, DJH, Jiang, ZM and Wang, X (2001). Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images. Journal of Applied Physics, 90 (6), 2725-2729. doi: 10.1063/1.1394900 |
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2001 Journal Article High-dose ion implantation into GaNKucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001). High-dose ion implantation into GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175, 214-218. doi: 10.1016/S0168-583X(00)00672-8 |
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2001 Journal Article Carrier transfer between V-grooved quantum wire and vertical quantum wellLu, W, Liu, XQ, Li, ZF, Shen, SC, Zhao, QX, Fu, Y, Willander, M, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001). Carrier transfer between V-grooved quantum wire and vertical quantum well. Physics Letters A, 280 (1-2), 77-80. doi: 10.1016/S0375-9601(01)00022-6 |
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2001 Journal Article Ion-beam-induced reconstruction of amorphous GaNKucheyev, S. O., Williams, J. S., Zou, J., Bradby, J. E., Jagadish, C. and Li, G. (2001). Ion-beam-induced reconstruction of amorphous GaN. Physical Review B, 63 (11), 113202-1-113202-4. doi: 10.1103/PhysRevB.63.113202 |
