2005 Journal Article High-performance dual-gate carbon nanotube FETs with 40-nm gate lengthLin, Yu-Ming, Appenzeller, J., Chen, Zhihong, Chen, Zhi-Gang, Cheng, Hui-Ming and Avouris , P. (2005). High-performance dual-gate carbon nanotube FETs with 40-nm gate length. IEEE Electron Device Letters, 26 (11), 823-825. doi: 10.1109/LED.2005.857704 |