Skip to menu Skip to content Skip to footer
Dr Yi-Hsun Chen
Dr

Yi-Hsun Chen

Email: 

Overview

Background

Yi-Hsun Chen completed his PhD in Physics at the Monash University in 2024. Prior to this PhD, he obtained his Master degree in Optoelectronics at the National Chiao Tung University, Taiwan, in 2014.

His research interests relate to electronic transport and optical properties of the following field of study:

  • Superconducting qubits
  • Exciton science
  • Bose-Einstein condensate
  • 2D materials (graphene, transition metal dichalcogenides, etc.)
  • Plasmonics

In 2024, He joins UQ as a Postdoctoral Research Fellow under an ARC Linkage Project "Surface and Interface Engineering for Superconducting Quantum Circuits," pursuing high-quality superconducting quantum circuits using surface engineering strategies.

Please find his publication list via google scholar profile https://scholar.google.com.tw/citations?user=EvKa9qIAAAAJ&hl=en

Availability

Dr Yi-Hsun Chen is:
Available for supervision

Qualifications

  • Bachelor of Optoelectronics, National Taipei University of Technology
  • Masters (Research) of Optoelectronics, National Chiao Tung University
  • Doctor of Philosophy of Condensed Matter Physics, Monash University

Works

Search Professor Yi-Hsun Chen’s works on UQ eSpace

13 works between 2014 and 2025

1 - 13 of 13 works

2025

Journal Article

Superconductivity in substitutional Ga-hyperdoped Ge epitaxial thin films

Steele, Julian A., Strohbeen, Patrick J., Verdi, Carla, Baktash, Ardeshir, Danilenko, Alisa, Chen, Yi-Hsun, van Dijk, Jechiel, Knudsen, Frederik H., Leblanc, Axel, Perconte, David, Wang, Lianzhou, Demler, Eugene, Salmani-Rezaie, Salva, Jacobson, Peter and Shabani, Javad (2025). Superconductivity in substitutional Ga-hyperdoped Ge epitaxial thin films. Nature Nanotechnology, 20 (12), 1-10. doi: 10.1038/s41565-025-02042-8

Superconductivity in substitutional Ga-hyperdoped Ge epitaxial thin films

2025

Journal Article

Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides

Chen, Yi-Hsun, Lo, Ping-Yuan, Boschen, Kyle W., Hsu, Chih-En, Hsu, Yung-Ning, Holtzman, Luke N., Peng, Guan-Hao, Huang, Chun-Jui, Holbrook, Madisen, Wang, Wei-Hua, Barmak, Katayun, Hone, James, Hawrylak, Pawel, Hsueh, Hung-Chung, Davis, Jeffrey A., Cheng, Shun-Jen, Fuhrer, Michael S. and Chen, Shao-Yu (2025). Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides. Nature Communications, 16 (1) 2935, 1-11. doi: 10.1038/s41467-025-57991-4

Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides

2025

Journal Article

Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication

Xing, Kaijian, Mcewen, Daniel, Yin, Yuefeng, Zhao, Weiyao, Bake, Abdulhakim, Cortie, David, Liu, Jingying, Vu, Thi-Hai-Yen, Chen, Yi-Hsun, Hone, James, Stacey, Alastair, Edmonds, Mark T., Medhekar, Nikhil V., Watanabe, Kenji, Taniguchi, Takashi, Ou, Qingdong, Qi, Dong-Chen and Fuhrer, Michael S. (2025). Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication. ACS Nano, 19 (3), 3579-3588. doi: 10.1021/acsnano.4c13592

Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication

2023

Journal Article

Increased phase coherence length in a porous topological insulator

Nguyen, Alexander, Akhgar, Golrokh, Cortie, David L., Bake, Abdulhakim, Pastuovic, Zeljko, Zhao, Weiyao, Liu, Chang, Chen, Yi-Hsun, Suzuki, Kiyonori, Fuhrer, Michael S., Culcer, Dimitrie, Hamilton, Alexander R., Edmonds, Mark T. and Karel, Julie (2023). Increased phase coherence length in a porous topological insulator. Physical Review Materials, 7 (6) 064202, 1-6. doi: 10.1103/physrevmaterials.7.064202

Increased phase coherence length in a porous topological insulator

2022

Journal Article

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high-electron affinity amorphous MoO3

Chen, Yi-Hsun, Xing, Kaijian, Liu, Song, Holtzman, Luke N., Creedon, Daniel L., McCallum, Jeffrey C., Watanabe, Kenji, Taniguchi, Takashi, Barmak, Katayun, Hone, James, Hamilton, Alexander R., Chen, Shao-Yu and Fuhrer, Michael S. (2022). P-type Ohmic contact to monolayer WSe2 field-effect transistors using high-electron affinity amorphous MoO3. ACS Applied Electronic Materials, 4 (11), 5379-5386. doi: 10.1021/acsaelm.2c01053

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high-electron affinity amorphous MoO3

2022

Journal Article

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors

Cheng, Chih-Yi, Pai, Wei-Liang, Chen, Yi-Hsun, Paylaga, Naomi Tabudlong, Wu, Pin-Yun, Chen, Chun-Wei, Liang, Chi-Te, Chou, Fang-Cheng, Sankar, Raman, Fuhrer, Michael S., Chen, Shao-Yu and Wang, Wei-Hua (2022). Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors. Nano Letters, 22 (6), 2270-2276. doi: 10.1021/acs.nanolett.1c04522

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors

2022

Journal Article

Defects, band bending and ionization rings in MoS<sub>2</sub>

Di Bernardo, Iolanda, Blyth, James, Watson, Liam, Xing, Kaijian, Chen, Yi-Hsun, Chen, Shao-Yu, Edmonds, Mark T. and Fuhrer, Michael S. (2022). Defects, band bending and ionization rings in MoS2. Journal of Physics: Condensed Matter, 34 (17) 174002, 1-7. doi: 10.1088/1361-648x/ac4f1d

Defects, band bending and ionization rings in MoS<sub>2</sub>

2021

Journal Article

Magnetotransport in hybrid InSe/monolayer graphene on SiC

Wang, Chih-Yuan, Lin, Yun-Wu, Chuang, Chiashain, Yang, Cheng-Hsueh, Patel, Dinesh K., Chen, Sheng-Zong, Yeh, Ching-Chen, Chen, Wei-Chen, Lin, Chia-Chun, Chen, Yi-Hsun, Wang, Wei-Hua, Sankar, Raman, Chou, Fang-Cheng, Kruskopf, Mattias, Elmquist, Randolph E. and Liang, Chi-Te (2021). Magnetotransport in hybrid InSe/monolayer graphene on SiC. Nanotechnology, 32 (15) 155704, 1-7. doi: 10.1088/1361-6528/abd726

Magnetotransport in hybrid InSe/monolayer graphene on SiC

2019

Journal Article

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

Chen, Yi-Hsun, Cheng, Chih-Yi, Chen, Shao-Yu, Rodriguez, Jan Sebastian Dominic, Liao, Han-Ting, Watanabe, Kenji, Taniguchi, Takashi, Chen, Chun-Wei, Sankar, Raman, Chou, Fang-Cheng, Chiu, Hsiang-Chih and Wang, Wei-Hua (2019). Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors. npj 2D Materials and Applications, 3 (1) 49, 1-7. doi: 10.1038/s41699-019-0133-3

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

2018

Journal Article

High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes

Huang, Yu-Ting, Chen, Yi-Hsun, Ho, Yi-Ju, Huang, Shih-Wei, Chang, Yih-Ren, Watanabe, Kenji, Taniguchi, Takashi, Chiu, Hsiang-Chih, Liang, Chi-Te, Sankar, Raman, Chou, Fang-Cheng, Chen, Chun-Wei and Wang, Wei-Hua (2018). High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes. ACS Applied Materials & Interfaces, 10 (39), 33450-33456. doi: 10.1021/acsami.8b10576

High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes

2016

Journal Article

Room temperature fabrication of titanium nitride thin films as plasmonic materials by high-power impulse magnetron sputtering

Yang, Zih-Ying, Chen, Yi-Hsun, Liao, Bo-Huei and Chen, Kuo-Ping (2016). Room temperature fabrication of titanium nitride thin films as plasmonic materials by high-power impulse magnetron sputtering. Optical Materials Express, 6 (2) 245651, 540-551. doi: 10.1364/ome.6.000540

Room temperature fabrication of titanium nitride thin films as plasmonic materials by high-power impulse magnetron sputtering

2015

Journal Article

Tunability and Optimization of Coupling Efficiency in Tamm Plasmon Modes

Chang, Che-Yuan, Chen, Yi-Hsun, Tsai, Yu-Lin, Kuo, Hao-Chung and Chen, Kuo-Ping (2015). Tunability and Optimization of Coupling Efficiency in Tamm Plasmon Modes. IEEE Journal of Selected Topics in Quantum Electronics, 21 (4), 262-267. doi: 10.1109/jstqe.2014.2375151

Tunability and Optimization of Coupling Efficiency in Tamm Plasmon Modes

2014

Journal Article

Observation of the high-sensitivity plasmonic dipolar antibonding mode of gold nanoantennas in evanescent waves

Chen, Yi-Hsun, Chen, Kuo-Ping, Shih, Min-Hsiung and Chang, Che-Yuan (2014). Observation of the high-sensitivity plasmonic dipolar antibonding mode of gold nanoantennas in evanescent waves. Applied Physics Letters, 105 (3) 031117, 1-4. doi: 10.1063/1.4891573

Observation of the high-sensitivity plasmonic dipolar antibonding mode of gold nanoantennas in evanescent waves

Supervision

Availability

Dr Yi-Hsun Chen is:
Available for supervision

Looking for a supervisor? Read our advice on how to choose a supervisor.

Supervision history

Current supervision

Media

Enquiries

For media enquiries about Dr Yi-Hsun Chen's areas of expertise, story ideas and help finding experts, contact our Media team:

communications@uq.edu.au