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2025

Journal Article

Superconductivity in substitutional Ga-hyperdoped Ge epitaxial thin films

Steele, Julian A., Strohbeen, Patrick J., Verdi, Carla, Baktash, Ardeshir, Danilenko, Alisa, Chen, Yi-Hsun, van Dijk, Jechiel, Knudsen, Frederik H., Leblanc, Axel, Perconte, David, Wang, Lianzhou, Demler, Eugene, Salmani-Rezaie, Salva, Jacobson, Peter and Shabani, Javad (2025). Superconductivity in substitutional Ga-hyperdoped Ge epitaxial thin films. Nature Nanotechnology, 20 (12), 1-10. doi: 10.1038/s41565-025-02042-8

Superconductivity in substitutional Ga-hyperdoped Ge epitaxial thin films

2025

Journal Article

Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides

Chen, Yi-Hsun, Lo, Ping-Yuan, Boschen, Kyle W., Hsu, Chih-En, Hsu, Yung-Ning, Holtzman, Luke N., Peng, Guan-Hao, Huang, Chun-Jui, Holbrook, Madisen, Wang, Wei-Hua, Barmak, Katayun, Hone, James, Hawrylak, Pawel, Hsueh, Hung-Chung, Davis, Jeffrey A., Cheng, Shun-Jen, Fuhrer, Michael S. and Chen, Shao-Yu (2025). Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides. Nature Communications, 16 (1) 2935, 1-11. doi: 10.1038/s41467-025-57991-4

Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides

2025

Journal Article

Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication

Xing, Kaijian, Mcewen, Daniel, Yin, Yuefeng, Zhao, Weiyao, Bake, Abdulhakim, Cortie, David, Liu, Jingying, Vu, Thi-Hai-Yen, Chen, Yi-Hsun, Hone, James, Stacey, Alastair, Edmonds, Mark T., Medhekar, Nikhil V., Watanabe, Kenji, Taniguchi, Takashi, Ou, Qingdong, Qi, Dong-Chen and Fuhrer, Michael S. (2025). Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication. ACS Nano, 19 (3), 3579-3588. doi: 10.1021/acsnano.4c13592

Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication

2023

Journal Article

Increased phase coherence length in a porous topological insulator

Nguyen, Alexander, Akhgar, Golrokh, Cortie, David L., Bake, Abdulhakim, Pastuovic, Zeljko, Zhao, Weiyao, Liu, Chang, Chen, Yi-Hsun, Suzuki, Kiyonori, Fuhrer, Michael S., Culcer, Dimitrie, Hamilton, Alexander R., Edmonds, Mark T. and Karel, Julie (2023). Increased phase coherence length in a porous topological insulator. Physical Review Materials, 7 (6) 064202, 1-6. doi: 10.1103/physrevmaterials.7.064202

Increased phase coherence length in a porous topological insulator

2022

Journal Article

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high-electron affinity amorphous MoO3

Chen, Yi-Hsun, Xing, Kaijian, Liu, Song, Holtzman, Luke N., Creedon, Daniel L., McCallum, Jeffrey C., Watanabe, Kenji, Taniguchi, Takashi, Barmak, Katayun, Hone, James, Hamilton, Alexander R., Chen, Shao-Yu and Fuhrer, Michael S. (2022). P-type Ohmic contact to monolayer WSe2 field-effect transistors using high-electron affinity amorphous MoO3. ACS Applied Electronic Materials, 4 (11), 5379-5386. doi: 10.1021/acsaelm.2c01053

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high-electron affinity amorphous MoO3

2022

Journal Article

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors

Cheng, Chih-Yi, Pai, Wei-Liang, Chen, Yi-Hsun, Paylaga, Naomi Tabudlong, Wu, Pin-Yun, Chen, Chun-Wei, Liang, Chi-Te, Chou, Fang-Cheng, Sankar, Raman, Fuhrer, Michael S., Chen, Shao-Yu and Wang, Wei-Hua (2022). Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors. Nano Letters, 22 (6), 2270-2276. doi: 10.1021/acs.nanolett.1c04522

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors

2022

Journal Article

Defects, band bending and ionization rings in MoS<sub>2</sub>

Di Bernardo, Iolanda, Blyth, James, Watson, Liam, Xing, Kaijian, Chen, Yi-Hsun, Chen, Shao-Yu, Edmonds, Mark T. and Fuhrer, Michael S. (2022). Defects, band bending and ionization rings in MoS2. Journal of Physics: Condensed Matter, 34 (17) 174002, 1-7. doi: 10.1088/1361-648x/ac4f1d

Defects, band bending and ionization rings in MoS<sub>2</sub>

2021

Journal Article

Magnetotransport in hybrid InSe/monolayer graphene on SiC

Wang, Chih-Yuan, Lin, Yun-Wu, Chuang, Chiashain, Yang, Cheng-Hsueh, Patel, Dinesh K., Chen, Sheng-Zong, Yeh, Ching-Chen, Chen, Wei-Chen, Lin, Chia-Chun, Chen, Yi-Hsun, Wang, Wei-Hua, Sankar, Raman, Chou, Fang-Cheng, Kruskopf, Mattias, Elmquist, Randolph E. and Liang, Chi-Te (2021). Magnetotransport in hybrid InSe/monolayer graphene on SiC. Nanotechnology, 32 (15) 155704, 1-7. doi: 10.1088/1361-6528/abd726

Magnetotransport in hybrid InSe/monolayer graphene on SiC

2019

Journal Article

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

Chen, Yi-Hsun, Cheng, Chih-Yi, Chen, Shao-Yu, Rodriguez, Jan Sebastian Dominic, Liao, Han-Ting, Watanabe, Kenji, Taniguchi, Takashi, Chen, Chun-Wei, Sankar, Raman, Chou, Fang-Cheng, Chiu, Hsiang-Chih and Wang, Wei-Hua (2019). Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors. npj 2D Materials and Applications, 3 (1) 49, 1-7. doi: 10.1038/s41699-019-0133-3

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

2018

Journal Article

High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes

Huang, Yu-Ting, Chen, Yi-Hsun, Ho, Yi-Ju, Huang, Shih-Wei, Chang, Yih-Ren, Watanabe, Kenji, Taniguchi, Takashi, Chiu, Hsiang-Chih, Liang, Chi-Te, Sankar, Raman, Chou, Fang-Cheng, Chen, Chun-Wei and Wang, Wei-Hua (2018). High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes. ACS Applied Materials & Interfaces, 10 (39), 33450-33456. doi: 10.1021/acsami.8b10576

High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes

2016

Journal Article

Room temperature fabrication of titanium nitride thin films as plasmonic materials by high-power impulse magnetron sputtering

Yang, Zih-Ying, Chen, Yi-Hsun, Liao, Bo-Huei and Chen, Kuo-Ping (2016). Room temperature fabrication of titanium nitride thin films as plasmonic materials by high-power impulse magnetron sputtering. Optical Materials Express, 6 (2) 245651, 540-551. doi: 10.1364/ome.6.000540

Room temperature fabrication of titanium nitride thin films as plasmonic materials by high-power impulse magnetron sputtering

2015

Journal Article

Tunability and Optimization of Coupling Efficiency in Tamm Plasmon Modes

Chang, Che-Yuan, Chen, Yi-Hsun, Tsai, Yu-Lin, Kuo, Hao-Chung and Chen, Kuo-Ping (2015). Tunability and Optimization of Coupling Efficiency in Tamm Plasmon Modes. IEEE Journal of Selected Topics in Quantum Electronics, 21 (4), 262-267. doi: 10.1109/jstqe.2014.2375151

Tunability and Optimization of Coupling Efficiency in Tamm Plasmon Modes

2014

Journal Article

Observation of the high-sensitivity plasmonic dipolar antibonding mode of gold nanoantennas in evanescent waves

Chen, Yi-Hsun, Chen, Kuo-Ping, Shih, Min-Hsiung and Chang, Che-Yuan (2014). Observation of the high-sensitivity plasmonic dipolar antibonding mode of gold nanoantennas in evanescent waves. Applied Physics Letters, 105 (3) 031117, 1-4. doi: 10.1063/1.4891573

Observation of the high-sensitivity plasmonic dipolar antibonding mode of gold nanoantennas in evanescent waves