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1998 Journal Article Annealing of ion implanted gallium nitrideTan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Zolper, J. C. and Stall, R. A. (1998). Annealing of ion implanted gallium nitride. Applied Physics Letters, 72 (10), 1190-1192. doi: 10.1063/1.121030 |
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1998 Journal Article Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperatureGlasko, J. M., Zou, J., Cockayne, D. J. H. and Fitz Gerald, J. D. (1998). Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature. Applied Physics Letters, 73 (6), 838-840. doi: 10.1063/1.122018 |
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1998 Journal Article Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopyRussell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H. and Usher, B. F. (1998). Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy. Applied Physics Letters, 73 (26), 3899-3901. doi: 10.1063/1.122929 |
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1998 Journal Article Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dotsLiao, X. Z., Zou, J., Duan, X. F., Cockayne, D. J. H., Leon, R. and Lobo, C. (1998). Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots. Physical review. B, Condensed matter and materials physics, 58 (8), R4235-R4237. doi: 10.1103/PhysRevB.58.R4235 |
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1997 Journal Article Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxyCockayne, D. J. H., Moon, A. R., Russell-Harriott, J. J. and Zou, J. (1997). Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy. Micron, 28 (4), 309-312. doi: 10.1016/S0968-4328(97)00027-9 |
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1997 Journal Article Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxyZou, J., Cockayne, D. J. H. and Russell-Harriott, J. J. (1997). Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 70 (23), 3134-3136. doi: 10.1063/1.119112 |
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1997 Journal Article Electrical and structural analysis of high-dose Si implantation in GaNZolper, JC, Tan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ, Crawford, MH and Karlicek, RF (1997). Electrical and structural analysis of high-dose Si implantation in GaN. Applied Physics Letters, 70 (20), 2729-2731. doi: 10.1063/1.119254 |
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1997 Journal Article Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealingYuan, S., Kim, Y., Jagadish, C., Burke, P. T., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1997). Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing. Applied Physics Letters, 70 (10), 1269-1271. doi: 10.1063/1.118549 |
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1997 Journal Article Diffraction behaviour of three-component fibonacci Ta/Al multilayer filmsJiang, S. S., Peng, R. W., Hu, A., Zou, J., Cockayne, D. J. H. and Sikorski, A. (1997). Diffraction behaviour of three-component fibonacci Ta/Al multilayer films. Journal of Applied Crystallography, 30 (2), 114-117. doi: 10.1107/S0021889896010916 |
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1997 Journal Article Ion beam induced damage in InP during heavy-ion elastic recoil detection analysisWalker, S. R., Johnston, P. N., Bubb, I. F., Stannard, W. B., Zhou, Jin, Jamieson, D. N., Dooley, S. P., Cohen, D. D. and Dytlewski, N. (1997). Ion beam induced damage in InP during heavy-ion elastic recoil detection analysis. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 130 (1-4), 166-170. doi: 10.1016/s0168-583x(97)00167-5 |
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1996 Journal Article Preferred orientation in carbon films induced by energetic condensationYin, Y, Zou, J and Mckenzie, DR (1996). Preferred orientation in carbon films induced by energetic condensation. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 119 (4), 587-590. doi: 10.1016/S0168-583X(96)00467-3 |
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1996 Journal Article Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrateKim, Y., Yuan, S., Leon, R., Jagadish, C., Gal, M., Johnston, M. B., Kalceff, M. A. S., Zou, J. and Cockayne, D. J. H. (1996). Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate. Journal of Applied Physics, 80 (9), 5014-5020. doi: 10.1063/1.363546 |
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1996 Journal Article Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayersTan, H. H., Jagadish, C., Williams, J. S., Zou, J. and Cockayne, D. J. H. (1996). Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers. Journal of Applied Physics, 80 (5), 2691-2701. doi: 10.1063/1.363186 |
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1996 Journal Article Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained‐layer heterostructuresCockayne, D. J. H. and Zou, J. (1996). Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained‐layer heterostructures. Journal of Applied Physics, 79 (10), 7632-7635. doi: 10.1063/1.361527 |
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1996 Journal Article The application of the cathodic arc to plasma assisted chemical vapor deposition of carboYin, Y, Zou, J and Das, A (1996). The application of the cathodic arc to plasma assisted chemical vapor deposition of carbo. Journal of Applied Physics, 79 (3), 1563-1568. doi: 10.1063/1.362649 |
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1996 Journal Article Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dotsLeon, R., Kim, Y., Gal, M., Zou, J. and Cockayne, D. J. H. (1996). Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots. Applied Physics Letters, 69 (13), 1888-1890. doi: 10.1063/1.117467 |
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1996 Journal Article Damage to epitaxial GaN layers by silicon implantationTan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J. and Stall, R. A. (1996). Damage to epitaxial GaN layers by silicon implantation. Applied Physics Letters, 69 (16), 2364-2366. doi: 10.1063/1.117526 |
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1996 Journal Article Temperature‐dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructuresZou, J, Cockayne, DJH and Usher, BF (1996). Temperature‐dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures. Applied Physics Letters, 68 (5), 673-675. doi: 10.1063/1.116587 |
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1996 Journal Article Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructuresZou, J. and Cockayne, D. J. H. (1996). Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures. Applied Physics Letters, 69 (8), 1083-1085. doi: 10.1063/1.117065 |
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1995 Journal Article {111} defects in 1-MeV-silicon-ion-implanted siliconChou, C. T., Cockayne, D. J. H., Zou, J., Kringhoj, P. and Jagadish, C. (1995). {111} defects in 1-MeV-silicon-ion-implanted silicon. Physical Review B, 52 (24), 17223-17230. doi: 10.1103/PhysRevB.52.17223 |
