Structure of Epitaxial Semiconductor Quantum Dots (2004-2007)
Abstract
Epitaxially grown semiconductor quantum dots have received extensive attention in recent years due to their potential applications in electronic and optoelectronic devises. However, the quality of current grown quantum dots is still very far from that required for real device applications due to a lack of detailed knowledge of their nanostructures. This project aims to combine the strength of growing semiconductor quantum dots at Fudan University and the world-class characterisation facilities (advanced transmission electron microscopy) at the University of Queensland to actively explore optimum paths for epaxially growing device-quality semiconductor quantum dots.