Towards high-quality hetero-epitaxial III-V semiconductor nanowires (2015-2017)
Abstract
Semiconductor nanowires has uncovered many scientific curiosities and extended their potential applications in many fields. In general, nanowire growth is governed by metallic catalysts, involving nanowire nucleation and growth. So far, the role of catalysts during nanowire nucleation is not clear and needs urgent attention. This project will investigate the behavior of catalysts before and during the nucleation of III-V nanowires by means of nanocharacterisation to ultimately integrate high-quality III-V nanowires on Si substrates. This project is first of its kind in this research field. The new knowledge developed from this project will provide critical insights for developing high-quality III-V nanowires integrated on Si substrates.
