Double Exposure Photoresists for the 32 and 22 nm Lithographic Nodes (2008-2011)
Abstract
This project aims to develop novel double exposure materials (DEM) for next generation photolithography. The trillion dollar semiconductor industry relies on continual increases in the density of transistors on integrated circuits. Achieving this depends on imaging smaller features, by improvements in optics and by moving to lower wavelength photons. Recently, the industry has embarked upon a shift in technology to immersion lithography, which will be used to print 45 nm features. The next nodes, 32 nm and 22 nm, can be achieved using double exposure lithography which use various DEM solutions to allow printing of two separate images onto the wafer. The technology described in the proposal can be broadly applied to lithography and printing.'',
