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Double Exposure Photoresists for the 32 and 22 nm Lithographic Nodes (2008-2011)

Abstract

This project aims to develop novel double exposure materials (DEM) for next generation photolithography. The trillion dollar semiconductor industry relies on continual increases in the density of transistors on integrated circuits. Achieving this depends on imaging smaller features, by improvements in optics and by moving to lower wavelength photons. Recently, the industry has embarked upon a shift in technology to immersion lithography, which will be used to print 45 nm features. The next nodes, 32 nm and 22 nm, can be achieved using double exposure lithography which use various DEM solutions to allow printing of two separate images onto the wafer. The technology described in the proposal can be broadly applied to lithography and printing.'',

Experts

Professor Andrew Whittaker

Affiliate of Australian Research Council Centre of Excellence for Green Electrochemical Transformati
ARC COE for Green Electrochemical Transformation of Carbon Dioxide
Faculty of Engineering, Architecture and Information Technology
Affiliate Professor
School of Chemistry and Molecular Biosciences
Faculty of Science
Professorial Research Fellow and Senior Group Leader
Australian Institute for Bioengineering and Nanotechnology
Andrew Whittaker
Andrew Whittaker

Associate Professor Idriss Blakey

Principal Research Fellow - CAI
Australian Institute for Bioengineering and Nanotechnology
Idriss Blakey
Idriss Blakey