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2011 Conference Publication Measurements of interface fracture strength between fiber-reinforced composite laminates and thin surface films using the blister testHeitzmann, Michael T., Hou, Meng, Veidt, Martin and Paton, Rowan (2011). Measurements of interface fracture strength between fiber-reinforced composite laminates and thin surface films using the blister test. 8th International Conference on Composite Science and Technology (ICCST8), Kuala Lumpur, Malaysia, 22-24 March 2011. Stafa-Zurich, Switzerland: Trans Tech Publications. doi: 10.4028/www.scientific.net/KEM.471-472.315 |
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2010 Conference Publication Numeric analysis of the shaft loaded blister test: Influence of nonlinearities on analytic solutionHeitzmann, Michael, Hou, Meng, Veidt, Martin and Falzon, Paul (2010). Numeric analysis of the shaft loaded blister test: Influence of nonlinearities on analytic solution. 6th Australasian Congress on Applied Mechanics (ACAM 6), Perth, Australia, 12-15 December 2010. Perth, Australia: Engineers Australia. |
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2009 Conference Publication The effect of process parameters on electrical properties of high density through-Si viasLeduc, Patrick, Assous, Myriam, Bouchu, David, Roman, Antonio, Heitzmann, Michel, Charlet, Barbara, Cioccio, Lea Di, Zussy, Marc, Mage, Lucile, Vandroux, Laurent, Deronzier, Emmanuel, Roule, Anne, Haumesser, Paul-Henri and Sillon, Nicolas (2009). The effect of process parameters on electrical properties of high density through-Si vias. |
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1993 Journal Article Electromigration in ALCu interconnections with W‐plug contactsFerlazzo, L., Reimbold, G., Gonchond, J. P., Heitzmann, M., Demolliens, O. and Lormand, G. (1993). Electromigration in ALCu interconnections with W‐plug contacts. Quality and Reliability Engineering International, 9 (4), 299-302. doi: 10.1002/qre.4680090410 |
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1991 Conference Publication A 0.35 mu m CMOS process for fast random logicGuegan, G., Lerme, M., Deleonibus, S., Martin, F., Heitzmann, M., Tedesco, S., Guerin, M., Reimbold, G., Leroux, C., Jaffard, C. and Belleville, M. (1991). A 0.35 mu m CMOS process for fast random logic. Institute of Electrical and Electronics Engineers Inc.. doi: 10.1109/IEDM.1991.235413 |
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1991 Conference Publication A fully scaled 0.5 μm CMOS process for fast random logicLerme, M., Guegan, G., Deléonibus, S., Martin, F., Heitzmann, M., Vinet, F., Jaffard, C., Belleville, M., Guerin, M., Reimbold, G. and Leroux, C. (1991). A fully scaled 0.5 μm CMOS process for fast random logic. IEEE Computer Society. |
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1991 Conference Publication Improvement in dry etching of tungsten featuresHeitzmann, Michel, Laporte, Philippe and Tabouret, Evelyne (1991). Improvement in dry etching of tungsten features. Publ by Int Soc for Optical Engineering. |
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1991 Journal Article A fully scaled 0.5μm CMOS process for fast random logicLerme, M., Guegan, G., Deléonibus, S., Martin, F., Heitzmann, M., Vinet, F., Jaffard, C., Belleville, M., Guerin, M., Reimbold, G. and Leroux, C. (1991). A fully scaled 0.5μm CMOS process for fast random logic. Microelectronic Engineering, 15 (1-4), 257-260. doi: 10.1016/0167-9317(91)90224-2 |
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1989 Conference Publication Field transistors electrical behaviour in double level aluminum interconnect processesDeleonibus, S., Arena, C., Heitzmann, M., Martin, F., Lajzerowicz, J. and Vinet, F. (1989). Field transistors electrical behaviour in double level aluminum interconnect processes. Publ by IEEE. |
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1989 Conference Publication Comparison between different intermetallic dielectric processes and consequences on field transistor behaviourDeleonibus, S., Arena, C., Heitzmann, M., Martin, F., Lajzerowicz, J. and Vinet, F. (1989). Comparison between different intermetallic dielectric processes and consequences on field transistor behaviour. IEEE Computer Society. doi: 10.1007/978-3-642-52314-4_139 |
