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2004 Conference Publication Towards p-Type Doping of ZnO by Ion ImplantationColeman, V. A., Tan, H. H., Jagadish, C., Kucheyev, S. O., Phillips, M. R. and Zou, Jin (2004). Towards p-Type Doping of ZnO by Ion Implantation. Materials Research Society 2004 Fall Meeting (MRS), Boston, 29 Nov - 3 Dec 2004. Materials Research Society. |
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2004 Edited Outputs UltramicroscopyUltramicroscopy. (2004). 98 (1-2) |
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2004 Journal Article Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREMWang, D., Zou, J., He, W. Z., Chen, H., Li, F. H., Kawasaki, K. and Oikawa, T. (2004). Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM. Ultramicroscopy, 98 (2-4), 259-264. doi: 10.1016/j.ultramic.2003.08.019 |
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2004 Journal Article Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical propertiesGao, Q, Tan, HH, Jagadish, C, Sun, BQ, Gal, M, Ouyang, L and Zou, J (2004). Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties. Journal of Crystal Growth, 264 (1-3), 92-97. doi: 10.1016/j.jcrysgro.2003.12.068 |
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2004 Journal Article Lattice damage produced in GaN by swift heavy ionsKucheyev, S. O., Timmers, H., Zou, J., Williams, J. S., Jagadish, C. and Li, G. (2004). Lattice damage produced in GaN by swift heavy ions. Journal of Applied Physics, 95 (10), 5360-5365. doi: 10.1063/1.1703826 |
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2004 Journal Article Atomistic structure of monocrystalline silicon in surface nano-modificationZarudi, I, Cheong, WCD, Zou, J and Zhang, LC (2004). Atomistic structure of monocrystalline silicon in surface nano-modification. Nanotechnology, 15 (1), 104-107. doi: 10.1088/0957-4484/15/1/020 |
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2004 Journal Article Dynamic annealing in III-nitrides under ion bombardmentKucheyev, SO, Williams, JS, Zou, J and Jagadish, C (2004). Dynamic annealing in III-nitrides under ion bombardment. Journal of Applied Physics, 95 (6), 3048-3054. doi: 10.1063/1.1649459 |
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2004 Conference Publication Lattice Disorder Produced in GaN by Irradation with Swift Heavy IonsKucheyev, S. O., Timmers, H., Zou, J., Williams, J. S., Jagadish, C. and Li, G. (2004). Lattice Disorder Produced in GaN by Irradation with Swift Heavy Ions. 14th International Conference on Ion Beam Modification of Materials (IBMM 2004), Monterey, California, USA, 5–10 September, 2004. |
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2003 Journal Article Multilayered carbon films for tribological applicationsMcKenzie, DR, Tarrant, RN, Bilek, MMM, Ha, T, Zou, J, McBride, WE, Cockayne, DJH, Fujisawa, N, Swain, MV, James, NL, Woodard, JC and McCulloch, DG (2003). Multilayered carbon films for tribological applications. Diamond And Related Materials, 12 (2), 178-184. doi: 10.1016/S0925-9635(03)00020-7 |
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2003 Book Chapter Transmission electron microscopy investigation of semi conductor quantum dotsZou, J. and Liao, X. Z. (2003). Transmission electron microscopy investigation of semi conductor quantum dots. 透射电子显微学进展. (pp. 552-574) edited by Hengqiang Ye and Yuanming Wang. Bejing, China: Science Press. |
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2003 Conference Publication TEM investigations of the compositions in Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J. and Cockayne, D. J. H. (2003). TEM investigations of the compositions in Ge(Si)/Si(001) quantum dots. VII InterAmerican Congress on Electron Microscopy, San Antonio, Texas, 3 - 7 August, 2003. New York, N.Y. U.S.A.: Microscopy Society of America. doi: 10.1017/s143192760344213x |
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2003 Journal Article Microstructures of phases in indented silicon: A high resolution characterizationZarudi, I, Zou, J and Zhang, LC (2003). Microstructures of phases in indented silicon: A high resolution characterization. Applied Physics Letters, 82 (6), 874-876. doi: 10.1063/1.1544429 |
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2003 Journal Article Epitaxially grown GaAsN random laserSun, BQ, Gal, M, Gao, Q, Tan, HH, Jagadish, C, Puzzer, T, Ouyang, L and Zou, J (2003). Epitaxially grown GaAsN random laser. Journal of Applied Physics, 93 (10), 5855-5858. doi: 10.1063/1.1568533 |
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2003 Conference Publication Atomic level structural modification in mono-crystalline silicon during nano-machiningZarudi, I., Cheong, W. C. D., Zou, J. and Zhang, L. C. (2003). Atomic level structural modification in mono-crystalline silicon during nano-machining. Intelligent Processing and Manufacturing of Material, Sendai, Japan, 18-23 May 2003. |
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2003 Conference Publication Nature of planar defects in ion-implanted GaNZou, J., Wang, Y. G., Kucheyev, S. O., Williams, J. S., Jagadish, C. and Li, G. (2003). Nature of planar defects in ion-implanted GaN. The Internalional Beijing Conference and Exhibition on Instrumental Analysis (BCEIA), Beijing, China, 13- 16 October, 2003. Pennington, NJ: The Electrochemical Society. doi: 10.1149/1.1541257 |
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2003 Journal Article Ion-beam-produced structural defects in ZnOKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Evans, C., Nelson, A. J. and Hamza, A. V. (2003). Ion-beam-produced structural defects in ZnO. Physical Review B, 67 (9), 94115-1-94115-11. doi: 10.1103/PhysRevB.67.094115 |
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2003 Conference Publication Dynamic annealing in group-III nitrides under ion irradiationKucheyev, S. O., Williams, J. S., Jagadish, C. and Zou, J. (2003). Dynamic annealing in group-III nitrides under ion irradiation. Symposium R:Radiation Effects and Ion Beam Processing of Materials, Boston, MA, 1 - 5 December, 2003. |
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2003 Conference Publication Ion implantation of ZnO: opportunities and challengesKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Evans, C., Nelson, A. J., Hamza, A. V. and Livermore, Laurence (2003). Ion implantation of ZnO: opportunities and challenges. Symposium Z: Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications, Boston, MA, 1 - 5 Decmeber, 2003. |
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2003 Conference Publication Strain relaxation in epitaxial self-assembled Ge(Si)/Si islandsZou, J., Liao, X. Z. and Cockayne, D. J. H. (2003). Strain relaxation in epitaxial self-assembled Ge(Si)/Si islands. nternational Beijing Conference and Exhibition on Instrumental Analysis, Beijing, China, 13 - 16 October, 2003. |
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2003 Conference Publication Strain relaxation in self-assembled Ge(Si)/Si quantum dotsZou, J., Liao, X. Z., Cockayne, D.J.H. and Jiang, Z. M. (2003). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. Advanced Nanomaterials and Nanodevices, China, 10 - 14 June, 2002. |
