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2003 Journal Article Multilayered carbon films for tribological applicationsMcKenzie, DR, Tarrant, RN, Bilek, MMM, Ha, T, Zou, J, McBride, WE, Cockayne, DJH, Fujisawa, N, Swain, MV, James, NL, Woodard, JC and McCulloch, DG (2003). Multilayered carbon films for tribological applications. Diamond And Related Materials, 12 (2), 178-184. doi: 10.1016/S0925-9635(03)00020-7 |
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2003 Conference Publication Strain Relaxation Mechanisms in Coherent and Incoherent Ge(Si)/Si IslandsZou, Jin, Liao, Xiaozhou, Cockayne, David J. H. and Jiang, Zuimin (2003). Strain Relaxation Mechanisms in Coherent and Incoherent Ge(Si)/Si Islands. Cambridge University Press. doi: 10.1017/S1431927603442360 |
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2003 Book Chapter Transmission electron microscopy investigation of semi conductor quantum dotsZou, J. and Liao, X. Z. (2003). Transmission electron microscopy investigation of semi conductor quantum dots. 透射电子显微学进展. (pp. 552-574) edited by Hengqiang Ye and Yuanming Wang. Bejing, China: Science Press. |
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2003 Conference Publication Nature of planar defects in ion-implanted GaNZou, J., Wang, Y. G., Kucheyev, S. O., Williams, J. S., Jagadish, C. and Li, G. (2003). Nature of planar defects in ion-implanted GaN. The Internalional Beijing Conference and Exhibition on Instrumental Analysis (BCEIA), Beijing, China, 13- 16 October, 2003. Pennington, NJ: The Electrochemical Society. doi: 10.1149/1.1541257 |
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2003 Journal Article Microstructures of phases in indented silicon: A high resolution characterizationZarudi, I, Zou, J and Zhang, LC (2003). Microstructures of phases in indented silicon: A high resolution characterization. Applied Physics Letters, 82 (6), 874-876. doi: 10.1063/1.1544429 |
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2003 Journal Article Epitaxially grown GaAsN random laserSun, BQ, Gal, M, Gao, Q, Tan, HH, Jagadish, C, Puzzer, T, Ouyang, L and Zou, J (2003). Epitaxially grown GaAsN random laser. Journal of Applied Physics, 93 (10), 5855-5858. doi: 10.1063/1.1568533 |
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2003 Conference Publication Atomic level structural modification in mono-crystalline silicon during nano-machiningZarudi, I., Cheong, W. C. D., Zou, J. and Zhang, L. C. (2003). Atomic level structural modification in mono-crystalline silicon during nano-machining. Intelligent Processing and Manufacturing of Material, Sendai, Japan, 18-23 May 2003. |
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2003 Conference Publication Dynamic annealing in group-III nitrides under ion irradiationKucheyev, S. O., Williams, J. S., Jagadish, C. and Zou, J. (2003). Dynamic annealing in group-III nitrides under ion irradiation. Symposium R:Radiation Effects and Ion Beam Processing of Materials, Boston, MA, 1 - 5 December, 2003. |
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2003 Conference Publication Ion implantation of ZnO: opportunities and challengesKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Evans, C., Nelson, A. J., Hamza, A. V. and Livermore, Laurence (2003). Ion implantation of ZnO: opportunities and challenges. Symposium Z: Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications, Boston, MA, 1 - 5 Decmeber, 2003. |
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2002 Journal Article Ion-beam-produced damage and its stability in AlN filmsKucheyev, SO, Williams, JS, Zou, J, Jagadish, C, Pophristic, M, Guo, S, Ferguson, IT and Manasreh, MO (2002). Ion-beam-produced damage and its stability in AlN films. Journal of Applied Physics, 92 (7), 3554-3558. doi: 10.1063/1.1501746 |
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2002 Journal Article Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growthZou, J., Liao, X. Z., Cockayne, D. J. H. and Jiang, Z. M. (2002). Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth. Applied Physics Letters, 81 (11), 1996-1998. doi: 10.1063/1.1506414 |
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2002 Journal Article Structural disorder in ion-implanted AlxGa1-xNKucheyev, S. O., Williams, J. S., Zou, J., Li, G., Jagadish, C., Manasreh, M. O., Pophristic, M., Guo, S. and Ferguson, I. T. (2002). Structural disorder in ion-implanted AlxGa1-xN. Applied Physics Letters, 80 (5), 787-789. doi: 10.1063/1.1445478 |
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2002 Conference Publication Composition distributions in Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J. and Cockayne, David J. H. (2002). Composition distributions in Ge(Si)/Si(001) quantum dots. 15th International Congress on Electron Microscopy (ICEM), Durban, South Africa, 1-6 September, 2002. |
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2002 Journal Article Blistering of H-implanted GaNKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2002). Blistering of H-implanted GaN. Journal of Applied Physics, 91 (6), 3928-3930. doi: 10.1063/1.1430533 |
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2002 Journal Article Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imagingCai, DQ, Zou, J, Chen, GB, Lu, W, Chen, XS and Ringer, SP (2002). Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imaging. Scripta Materialia, 47 (4), 279-283. doi: 10.1016/S1359-6462(02)00144-6 |
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2002 Conference Publication Formation of misfit dislocations form island surface in Ge(Si)/Si quantum dotsZou, J. (2002). Formation of misfit dislocations form island surface in Ge(Si)/Si quantum dots. COMMAD 2002, Sydney, Australia, 11-13 December, 2002. Piscataway: IEEE. |
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2002 Journal Article Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2002). Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots. Physical Review B, 65 (15), 153306 - 1-153306 - 4. doi: 10.1103/PhysRevB.65.153306 |
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2002 Conference Publication Atomistic structure changes in monocrystalline silicon during nano-sliding and nano-indentationZarudi, I., Zou, J. and Zhang, L. C. (2002). Atomistic structure changes in monocrystalline silicon during nano-sliding and nano-indentation. 10th Foresight Conference on Molecular Nanotechnology, Bethesda, Washington, USA, 11-13 October, 2002. Online: Foresight Institute. |
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2002 Conference Publication Strain relaxation in self-assembled Ge(Si)/Si quantum dotsZou, J., Liao, X. Z. and Cockayne, D. J. H. (2002). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. 15th International Congress on Electron Microscopy, Durban, South Africa, 1-6 September 2002. Onderstepoort, South Africa: Microscopy Society of Southern Africa. |
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2002 Conference Publication Structural electrical and optical properties of MeV ion implanted InPCarmody, C., Tan, H. H., Jagadish, C., Zou, J., Dao, L. and Gal, M. (2002). Structural electrical and optical properties of MeV ion implanted InP. Optoelectronic and Microelecttronic Materials and Devices, Sydney, 9 - 113 December, 2002. NEW YORK: IEEE. doi: 10.1109/COMMAD.2002.1237296 |
