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2004 Journal Article Amorphous structures induced in monocrystalline silicon by mechanical loadingZarudi, I., Zou, J., McBride, W. and Zhang, L. C. (2004). Amorphous structures induced in monocrystalline silicon by mechanical loading. Applied Physics Letters, 85 (6), 932-934. doi: 10.1063/1.1779344 |
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2004 Journal Article Structural, electrical, and optical analysis of ion implanted semi-insulating InPCarmody, C, Tan, HH, Jagadish, C, Douheret, O, Maknys, K, Anand, S, Zou, J, Dao, L and Gal, M (2004). Structural, electrical, and optical analysis of ion implanted semi-insulating InP. Journal of Applied Physics, 95 (2), 477-482. doi: 10.1063/1.1633349 |
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2004 Conference Publication Nanoanalysis of novel dopants in oxygen ion conductorsAuchterlonie, G.J., Drennan, J. and Zou, J. (2004). Nanoanalysis of novel dopants in oxygen ion conductors. ACEM-18, Geelong, Australia, 31 January- 6 February 2004. |
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2004 Journal Article [0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthdayLiao, X. Z., Zou, J., Cockayne, D. J. H. and Matsumura, S. (2004). [0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthday. Ultramicroscopy, 98 (2-4), 239-247. doi: 10.1016/j.ultramic.2003.08.017 |
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2004 Journal Article The R8-BC8 phases and crystal growth in monocrystalline silicon under microindentation with a spherical indenterZarudi, I, Zhang, LC, Zou, J and Vodenitcharova, T (2004). The R8-BC8 phases and crystal growth in monocrystalline silicon under microindentation with a spherical indenter. Journal of Materials Research, 19 (1), 332-337. doi: 10.1557/jmr.2004.19.1.332 |
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2004 Conference Publication Towards p-Type Doping of ZnO by Ion ImplantationColeman, V. A., Tan, H. H., Jagadish, C., Kucheyev, S. O., Phillips, M. R. and Zou, Jin (2004). Towards p-Type Doping of ZnO by Ion Implantation. Materials Research Society 2004 Fall Meeting (MRS), Boston, 29 Nov - 3 Dec 2004. Materials Research Society. |
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2004 Edited Outputs UltramicroscopyUltramicroscopy. (2004). 98 (1-2) |
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2004 Journal Article Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREMWang, D., Zou, J., He, W. Z., Chen, H., Li, F. H., Kawasaki, K. and Oikawa, T. (2004). Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM. Ultramicroscopy, 98 (2-4), 259-264. doi: 10.1016/j.ultramic.2003.08.019 |
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2004 Journal Article Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical propertiesGao, Q, Tan, HH, Jagadish, C, Sun, BQ, Gal, M, Ouyang, L and Zou, J (2004). Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties. Journal of Crystal Growth, 264 (1-3), 92-97. doi: 10.1016/j.jcrysgro.2003.12.068 |
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2004 Journal Article Lattice damage produced in GaN by swift heavy ionsKucheyev, S. O., Timmers, H., Zou, J., Williams, J. S., Jagadish, C. and Li, G. (2004). Lattice damage produced in GaN by swift heavy ions. Journal of Applied Physics, 95 (10), 5360-5365. doi: 10.1063/1.1703826 |
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2004 Journal Article Atomistic structure of monocrystalline silicon in surface nano-modificationZarudi, I, Cheong, WCD, Zou, J and Zhang, LC (2004). Atomistic structure of monocrystalline silicon in surface nano-modification. Nanotechnology, 15 (1), 104-107. doi: 10.1088/0957-4484/15/1/020 |
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2004 Journal Article Dynamic annealing in III-nitrides under ion bombardmentKucheyev, SO, Williams, JS, Zou, J and Jagadish, C (2004). Dynamic annealing in III-nitrides under ion bombardment. Journal of Applied Physics, 95 (6), 3048-3054. doi: 10.1063/1.1649459 |
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2004 Conference Publication Lattice Disorder Produced in GaN by Irradation with Swift Heavy IonsKucheyev, S. O., Timmers, H., Zou, J., Williams, J. S., Jagadish, C. and Li, G. (2004). Lattice Disorder Produced in GaN by Irradation with Swift Heavy Ions. 14th International Conference on Ion Beam Modification of Materials (IBMM 2004), Monterey, California, USA, 5–10 September, 2004. |
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2003 Journal Article Multilayered carbon films for tribological applicationsMcKenzie, DR, Tarrant, RN, Bilek, MMM, Ha, T, Zou, J, McBride, WE, Cockayne, DJH, Fujisawa, N, Swain, MV, James, NL, Woodard, JC and McCulloch, DG (2003). Multilayered carbon films for tribological applications. Diamond And Related Materials, 12 (2), 178-184. doi: 10.1016/S0925-9635(03)00020-7 |
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2003 Book Chapter Transmission electron microscopy investigation of semi conductor quantum dotsZou, J. and Liao, X. Z. (2003). Transmission electron microscopy investigation of semi conductor quantum dots. 透射电子显微学进展. (pp. 552-574) edited by Hengqiang Ye and Yuanming Wang. Bejing, China: Science Press. |
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2003 Conference Publication TEM investigations of the compositions in Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J. and Cockayne, D. J. H. (2003). TEM investigations of the compositions in Ge(Si)/Si(001) quantum dots. VII InterAmerican Congress on Electron Microscopy, San Antonio, Texas, 3 - 7 August, 2003. New York, N.Y. U.S.A.: Microscopy Society of America. doi: 10.1017/s143192760344213x |
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2003 Journal Article Microstructures of phases in indented silicon: A high resolution characterizationZarudi, I, Zou, J and Zhang, LC (2003). Microstructures of phases in indented silicon: A high resolution characterization. Applied Physics Letters, 82 (6), 874-876. doi: 10.1063/1.1544429 |
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2003 Journal Article Epitaxially grown GaAsN random laserSun, BQ, Gal, M, Gao, Q, Tan, HH, Jagadish, C, Puzzer, T, Ouyang, L and Zou, J (2003). Epitaxially grown GaAsN random laser. Journal of Applied Physics, 93 (10), 5855-5858. doi: 10.1063/1.1568533 |
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2003 Conference Publication Atomic level structural modification in mono-crystalline silicon during nano-machiningZarudi, I., Cheong, W. C. D., Zou, J. and Zhang, L. C. (2003). Atomic level structural modification in mono-crystalline silicon during nano-machining. Intelligent Processing and Manufacturing of Material, Sendai, Japan, 18-23 May 2003. |
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2003 Conference Publication Nature of planar defects in ion-implanted GaNZou, J., Wang, Y. G., Kucheyev, S. O., Williams, J. S., Jagadish, C. and Li, G. (2003). Nature of planar defects in ion-implanted GaN. The Internalional Beijing Conference and Exhibition on Instrumental Analysis (BCEIA), Beijing, China, 13- 16 October, 2003. Pennington, NJ: The Electrochemical Society. doi: 10.1149/1.1541257 |
