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2000 Journal Article Ion-beam-induced dissociation and bubble formation in GaNKucheyev, S. O., Williams, J. S., Zou, J., Jagadish, C. and Li, G. (2000). Ion-beam-induced dissociation and bubble formation in GaN. Applied Physics Letters, 77 (22), 3577-3579. doi: 10.1063/1.1330221 |
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2000 Journal Article Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment. Journal of Applied Physics, 88 (9), 5493-5495. doi: 10.1063/1.1318361 |
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2000 Journal Article Distinguishing glide and shuffle types for 60 degrees dislocation in semicoductors by field-emission HREM image processingWang, D, Li, FH and Zou, J (2000). Distinguishing glide and shuffle types for 60 degrees dislocation in semicoductors by field-emission HREM image processing. Ultramicroscopy, 85 (3), 131-139. doi: 10.1016/S0304-3991(00)00053-X |
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2000 Journal Article Ion-beam-induced porosity of GaNKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Craig, V. S. J. and Li, G. (2000). Ion-beam-induced porosity of GaN. Applied Physics Letters, 77 (10), 1455-1457. doi: 10.1063/1.1290722 |
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2000 Journal Article Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wiresZhao, QX, Willander, M, Lu, W, Liu, XQ, Shen, SC, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2000). Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires. Journal of Applied Physics, 88 (5), 2519-2522. doi: 10.1063/1.1287119 |
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2000 Journal Article Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structuresLiu, XQ, Li, N, Li, ZF, Lu, W, Shen, SC, Fu, Y, Willander, M, Tan, HH, Jagadish, C and Zou, J (2000). Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 39 (9A), 5124-5127. doi: 10.1143/JJAP.39.5124 |
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2000 Journal Article Damage buildup in GaN under ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Damage buildup in GaN under ion bombardment. Physical Review B, 62 (11), 7510-7522. doi: 10.1103/PhysRevB.62.7510 |
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2000 Journal Article Composition and its impact on shape evolution in dislocated Ge(Si)/Si islandsLiao, X. Z., Zou, J., Cockayne, D. J. H., Jiang, Z. M., Wang, X. and Leon, R. (2000). Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands. Applied Physics Letters, 77 (9), 1304-1306. doi: 10.1063/1.1290384 |
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2000 Journal Article Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconWong-Leung, J, Fatima, S, Jagadish, C, Fitz Gerald, JD, Chou, CT, Zou, J and Cockayne, DJH (2000). Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon. Journal of Applied Physics, 88 (3), 1312-1318. doi: 10.1063/1.373819 |
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2000 Journal Article Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopyRussell, JJ, Zou, J, Moon, AR and Cockayne, DJH (2000). Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy. Journal of Applied Physics, 88 (3), 1307-1311. doi: 10.1063/1.373818 |
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2000 Journal Article Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dotsLobo, C, Perret, N, Morris, D, Zou, J, Cockayne, DJH, Johnston, MB, Gal, M and Leon, R (2000). Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots. Physical Review B, 62 (4), 2737-2742. doi: 10.1103/PhysRevB.62.2737 |
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2000 Journal Article Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)Leon, R., Wellman, J., Liao, X. Z., Zou, J. and Cockayne, D. J. H. (2000). Adatom condensation and quantum dot sizes in InGaAs/GaAs (001). Applied Physics Letters, 76 (12), 1558-1560. doi: 10.1063/1.126095 |
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2000 Journal Article Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wireFu, Y, Willander, M, Lu, W, Liu, XQ, Shen, SC, Jagadish, C, Gal, M, Zou, J and Cockayne, DJH (2000). Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire. Physical Review B, 61 (12), 8306-8311. doi: 10.1103/PhysRevB.61.8306 |
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2000 Journal Article Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealingLiu, XQ, Lu, W, Chen, XS, Shen, SC, Tan, HH, Yuan, S, Jagadish, C, Johnston, MB, Dao, LV, Gal, M, Zou, J and Cockayne, DJH (2000). Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing. Journal of Applied Physics, 87 (3), 1566-1568. doi: 10.1063/1.372051 |
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2000 Journal Article Surface disordering and nitrogen loss in GaN under ion bombardmentKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Toth, M., Phillips, M. R., Tan, H. H., Li, G. and Pearton, S. J. (2000). Surface disordering and nitrogen loss in GaN under ion bombardment. Materials Research Society Symposium-Proceedings, 622, T791-T796. |
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2000 Conference Publication Ion-implanted GaAs for ultrafast saturable absorber applicationsLederer, MJ, Luther-Davies, B, Tan, HH, Jagadish, C, Haiml, M, Siegner, U, Keller, U, Zou, J and Cockayne, DJH (2000). Ion-implanted GaAs for ultrafast saturable absorber applications. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE. doi: 10.1109/SIM.2000.939213 |
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2000 Conference Publication HREM investigation of planar defects in ion-implanted GaNZou, J., Wang, Y. G., Kucheyev, S. O., Williams, J. S., Jagadish, C. and Li, G. (2000). HREM investigation of planar defects in ion-implanted GaN. COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, 11-13 December, 2000. |
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2000 Conference Publication Transmission electron microscopy investigation of semiconductor quantum dotsLiao, XZ, Zou, J and Cockayne, DJH (2000). Transmission electron microscopy investigation of semiconductor quantum dots. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE. doi: 10.1109/SIM.2000.939230 |
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2000 Conference Publication Ion implantation into GaN: Opportunities and problemsKucheyev, SO, Williams, JS, Jagadish, C, Zou, J, Toth, M, Phillips, MR and Li, G (2000). Ion implantation into GaN: Opportunities and problems. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE. |
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2000 Conference Publication Composition distribution in Ge(Si) islands grown on Si (001) substrateZou, J., Liao, X. Z. and Cockayne, D. J. H. (2000). Composition distribution in Ge(Si) islands grown on Si (001) substrate. COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, 11-13 December, 2000. |
