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1996 Journal Article Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained‐layer heterostructuresCockayne, D. J. H. and Zou, J. (1996). Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained‐layer heterostructures. Journal of Applied Physics, 79 (10), 7632-7635. doi: 10.1063/1.361527 |
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1996 Journal Article Temperature‐dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructuresZou, J, Cockayne, DJH and Usher, BF (1996). Temperature‐dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures. Applied Physics Letters, 68 (5), 673-675. doi: 10.1063/1.116587 |
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1996 Conference Publication V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealingKim, Y, Yuan, S, Leon, R, Clark, A, Jagadish, C, Johnston, MB, Burke, P, Gal, M, Zou, J, Cockayne, D, Phillips, MR and Kalceff, MAS (1996). V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610106 |
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1996 Journal Article Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructuresZou, J. and Cockayne, D. J. H. (1996). Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures. Applied Physics Letters, 69 (8), 1083-1085. doi: 10.1063/1.117065 |
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1996 Conference Publication Ion implantation processing of GaN epitaxial layersTan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ and Yuan, C (1996). Ion implantation processing of GaN epitaxial layers. 1st ECS Symposium on III-V Nitride Materials and Processes, Los Angeles Ca, May 06-08, 1996. PENNINGTON: ELECTROCHEMICAL SOCIETY INC. |
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1996 Journal Article The application of the cathodic arc to plasma assisted chemical vapor deposition of carboYin, Y, Zou, J and Das, A (1996). The application of the cathodic arc to plasma assisted chemical vapor deposition of carbo. Journal of Applied Physics, 79 (3), 1563-1568. doi: 10.1063/1.362649 |
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1996 Conference Publication The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructuresGlasko, JM, Zou, J, Cockayne, DJH, Gerald, JF and Elliman, RG (1996). The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610092 |
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1996 Journal Article Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dotsLeon, R., Kim, Y., Gal, M., Zou, J. and Cockayne, D. J. H. (1996). Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots. Applied Physics Letters, 69 (13), 1888-1890. doi: 10.1063/1.117467 |
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1996 Conference Publication Strain relief and interfacial structure in ZnSe layers grown on GaAs substratesZhang, Y, Usher, BF, Riley, JD, Huang, , Zou, J, Leckey, RCG and Wolfframm, D (1996). Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610154 |
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1996 Journal Article Damage to epitaxial GaN layers by silicon implantationTan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J. and Stall, R. A. (1996). Damage to epitaxial GaN layers by silicon implantation. Applied Physics Letters, 69 (16), 2364-2366. doi: 10.1063/1.117526 |
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1995 Journal Article {111} defects in 1-MeV-silicon-ion-implanted siliconChou, C. T., Cockayne, D. J. H., Zou, J., Kringhoj, P. and Jagadish, C. (1995). {111} defects in 1-MeV-silicon-ion-implanted silicon. Physical Review B, 52 (24), 17223-17230. doi: 10.1103/PhysRevB.52.17223 |
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1995 Journal Article Ion damage buildup and amorphization processes in AlxGa1-xAsTan, H. H., Jagadish, C., Williams, J. S., Zou, J., Cockayne, D. J. H. and Sikorski, A. (1995). Ion damage buildup and amorphization processes in AlxGa1-xAs. Journal of Applied Physics, 77 (1), 87-94. doi: 10.1063/1.359358 |
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1995 Conference Publication Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructuresZou, J. and Cockayne, D. J. H. (1995). Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructures. 2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance, Ballarat, Australia, 1-5 November 1993. Switzerland, Germany: Trans Tech Publications. doi: 10.4028/www.scientific.net/MSF.189-190.279 |
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1995 Journal Article Adherent carbon film deposition by cathodic arc with implantationGerstner, E. G., McKenzie, D. R., Puchert, M. K., Timbrell, P. Y. and Zou, J. (1995). Adherent carbon film deposition by cathodic arc with implantation. Journal of Vacuum Science & Technology A., 13 (2), 406-411. doi: 10.1116/1.579372 |
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1995 Journal Article Theoretical consideration of equilibrium dissociation geometries of 60° misfit dislocations in single semiconductor heterostructuresZou, J and Cockayne, Djh (1995). Theoretical consideration of equilibrium dissociation geometries of 60° misfit dislocations in single semiconductor heterostructures. Journal of Applied Physics, 77 (6), 2448-2453. doi: 10.1063/1.358772 |
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1994 Journal Article Misfit dislocations lying along 〈100〉 in [001] GaAs/In0.25Ga0.75As/GaAs quantum well heterostructuresZou, J, Chou, TC, Cockayne, Djh, Sikorski, A and Vaughan, MR (1994). Misfit dislocations lying along 〈100〉 in [001] GaAs/In0.25Ga0.75As/GaAs quantum well heterostructures. Applied Physics Letters, 65 (13), 1647-1649. doi: 10.1063/1.112938 |
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1994 Journal Article Glide of misfit dislocations through multi-layer heterostructuresZou, J. and Cockayne, D. J. H. (1994). Glide of misfit dislocations through multi-layer heterostructures. Physica Status Solidi A-applied Research, 145 (1), 133-143. doi: 10.1002/pssa.2211450112 |
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1994 Journal Article Precise determination of the periodicity for Mo/Si and W/C metallic multilayers by electron and x‐ray diffractionJiang, S. S., Zou, J., Cockayne, D. J. H., Hu, A. and Sikorski, A. (1994). Precise determination of the periodicity for Mo/Si and W/C metallic multilayers by electron and x‐ray diffraction. Journal of Applied Physics, 77 (1), 167-173. doi: 10.1063/1.359363 |
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1994 Journal Article Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructuresZou, J. and Cockayne, D. J. H. (1994). Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures. Physical Review B, 49 (12), 8086-8095. doi: 10.1103/PhysRevB.49.8086 |
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1994 Conference Publication TEM studies of misfit dislocations in strained-layer heterostructuresZou, J and Cockayne, Djh (1994). TEM studies of misfit dislocations in strained-layer heterostructures. 13th International Congress on Electron Microscopy, Paris France, Jul 17-22, 1994. LES ULIS: MATERIALS RESEARCH SOCIETY. |
