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1996 Journal Article Damage to epitaxial GaN layers by silicon implantationTan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J. and Stall, R. A. (1996). Damage to epitaxial GaN layers by silicon implantation. Applied Physics Letters, 69 (16), 2364-2366. doi: 10.1063/1.117526 |
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1996 Conference Publication Strain relief and interfacial structure in ZnSe layers grown on GaAs substratesZhang, Y, Usher, BF, Riley, JD, Huang, , Zou, J, Leckey, RCG and Wolfframm, D (1996). Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610154 |
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1996 Journal Article Temperature‐dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructuresZou, J, Cockayne, DJH and Usher, BF (1996). Temperature‐dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures. Applied Physics Letters, 68 (5), 673-675. doi: 10.1063/1.116587 |
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1996 Journal Article Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructuresZou, J. and Cockayne, D. J. H. (1996). Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures. Applied Physics Letters, 69 (8), 1083-1085. doi: 10.1063/1.117065 |
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1995 Journal Article {111} defects in 1-MeV-silicon-ion-implanted siliconChou, C. T., Cockayne, D. J. H., Zou, J., Kringhoj, P. and Jagadish, C. (1995). {111} defects in 1-MeV-silicon-ion-implanted silicon. Physical Review B, 52 (24), 17223-17230. doi: 10.1103/PhysRevB.52.17223 |
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1995 Conference Publication Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructuresZou, J. and Cockayne, D. J. H. (1995). Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructures. 2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance, Ballarat, Australia, 1-5 November 1993. Switzerland, Germany: Trans Tech Publications. doi: 10.4028/www.scientific.net/MSF.189-190.279 |
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1995 Journal Article Adherent carbon film deposition by cathodic arc with implantationGerstner, E. G., McKenzie, D. R., Puchert, M. K., Timbrell, P. Y. and Zou, J. (1995). Adherent carbon film deposition by cathodic arc with implantation. Journal of Vacuum Science & Technology A., 13 (2), 406-411. doi: 10.1116/1.579372 |
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1995 Journal Article Theoretical consideration of equilibrium dissociation geometries of 60° misfit dislocations in single semiconductor heterostructuresZou, J and Cockayne, Djh (1995). Theoretical consideration of equilibrium dissociation geometries of 60° misfit dislocations in single semiconductor heterostructures. Journal of Applied Physics, 77 (6), 2448-2453. doi: 10.1063/1.358772 |
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1995 Journal Article Ion damage buildup and amorphization processes in AlxGa1-xAsTan, H. H., Jagadish, C., Williams, J. S., Zou, J., Cockayne, D. J. H. and Sikorski, A. (1995). Ion damage buildup and amorphization processes in AlxGa1-xAs. Journal of Applied Physics, 77 (1), 87-94. doi: 10.1063/1.359358 |
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1994 Journal Article Misfit dislocations lying along 〈100〉 in [001] GaAs/In0.25Ga0.75As/GaAs quantum well heterostructuresZou, J, Chou, TC, Cockayne, Djh, Sikorski, A and Vaughan, MR (1994). Misfit dislocations lying along 〈100〉 in [001] GaAs/In0.25Ga0.75As/GaAs quantum well heterostructures. Applied Physics Letters, 65 (13), 1647-1649. doi: 10.1063/1.112938 |
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1994 Journal Article Glide of misfit dislocations through multi-layer heterostructuresZou, J. and Cockayne, D. J. H. (1994). Glide of misfit dislocations through multi-layer heterostructures. Physica Status Solidi A-applied Research, 145 (1), 133-143. doi: 10.1002/pssa.2211450112 |
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1994 Journal Article Precise determination of the periodicity for Mo/Si and W/C metallic multilayers by electron and x‐ray diffractionJiang, S. S., Zou, J., Cockayne, D. J. H., Hu, A. and Sikorski, A. (1994). Precise determination of the periodicity for Mo/Si and W/C metallic multilayers by electron and x‐ray diffraction. Journal of Applied Physics, 77 (1), 167-173. doi: 10.1063/1.359363 |
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1994 Journal Article Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructuresZou, J. and Cockayne, D. J. H. (1994). Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures. Physical Review B, 49 (12), 8086-8095. doi: 10.1103/PhysRevB.49.8086 |
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1994 Conference Publication TEM studies of misfit dislocations in strained-layer heterostructuresZou, J and Cockayne, Djh (1994). TEM studies of misfit dislocations in strained-layer heterostructures. 13th International Congress on Electron Microscopy, Paris France, Jul 17-22, 1994. LES ULIS: MATERIALS RESEARCH SOCIETY. |
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1994 Journal Article The geometry of misfit dislocations with respect to the strained interface in [001] In0.1Ga0.9As/GaAs single heterostructuresZou, J, Cockayne, Djh and Jiang, SS (1994). The geometry of misfit dislocations with respect to the strained interface in [001] In0.1Ga0.9As/GaAs single heterostructures. Journal of Applied Physics, 75 (11), 7317-7322. doi: 10.1063/1.356642 |
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1993 Journal Article Growth direction dependence on strain relief by misfit dislocations in strained-layer heterostructuresZou, J. (1993). Growth direction dependence on strain relief by misfit dislocations in strained-layer heterostructures. Thin Solid Films, 235 (1-2), 6-9. doi: 10.1016/0040-6090(93)90230-M |
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1993 Journal Article Equilibrium dissociation configuration of misfit dislocations in low strained In0.1Ga0.9As/GaAs single heterostructuresZou, J. and Cockayne, D. J. H. (1993). Equilibrium dissociation configuration of misfit dislocations in low strained In0.1Ga0.9As/GaAs single heterostructures. Applied Physics Letters, 63 (16), 2222-2224. doi: 10.1063/1.110533 |
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1993 Journal Article Theoretical consideration of misfit dislocation nucleation by partial dislocations in [001] strained‐layer heterostructuresZou, J and Cockayne, Djh (1993). Theoretical consideration of misfit dislocation nucleation by partial dislocations in [001] strained‐layer heterostructures. Journal of Applied Physics, 74 (2), 925-930. doi: 10.1063/1.354860 |
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1993 Journal Article Misfit dislocations and critical thickness in InGaAs/GaAs heterostructure systemsZou, J, Cockayne, Djh and Usher, BF (1993). Misfit dislocations and critical thickness in InGaAs/GaAs heterostructure systems. Journal of Applied Physics, 73 (2), 619-626. doi: 10.1063/1.353372 |
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1992 Journal Article An electron diffraction and microscopy investigation of quasi-periodic Ta-Al superlatticesJiang, S. S., Zou, J., Cockayne, D. J. H., Sikorski, A., Hu, A and Peng, R. W. (1992). An electron diffraction and microscopy investigation of quasi-periodic Ta-Al superlattices. Philosophical Magazine B, 66 (2), 229-237. doi: 10.1080/13642819208224586 |
