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1998 Journal Article Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dotsLiao, X. Z., Zou, J., Duan, X. F., Cockayne, D. J. H., Leon, R. and Lobo, C. (1998). Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots. Physical review. B, Condensed matter and materials physics, 58 (8), R4235-R4237. doi: 10.1103/PhysRevB.58.R4235 |
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1997 Journal Article Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxyCockayne, D. J. H., Moon, A. R., Russell-Harriott, J. J. and Zou, J. (1997). Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy. Micron, 28 (4), 309-312. doi: 10.1016/S0968-4328(97)00027-9 |
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1997 Journal Article Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxyZou, J., Cockayne, D. J. H. and Russell-Harriott, J. J. (1997). Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 70 (23), 3134-3136. doi: 10.1063/1.119112 |
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1997 Journal Article Electrical and structural analysis of high-dose Si implantation in GaNZolper, JC, Tan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ, Crawford, MH and Karlicek, RF (1997). Electrical and structural analysis of high-dose Si implantation in GaN. Applied Physics Letters, 70 (20), 2729-2731. doi: 10.1063/1.119254 |
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1997 Journal Article Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealingYuan, S., Kim, Y., Jagadish, C., Burke, P. T., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1997). Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing. Applied Physics Letters, 70 (10), 1269-1271. doi: 10.1063/1.118549 |
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1997 Conference Publication Misfit dislocations nucleated from the surface in strained-layer heterostructuresCockayne, D. J. H. and Zou, J. (1997). Misfit dislocations nucleated from the surface in strained-layer heterostructures. Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD 96, Canberra, Australia, 8-11 December 1996. New York ; Piscataway, NJ: Institute of Electrical and Electronic Engineers : IEEE Service Center,. doi: 10.1109/COMMAD.1996.610129 |
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1997 Conference Publication Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAsRussellharriott, J. J., Zou, J., Cockayne, D. J. H., Moon, A. R. and Usher, B. F. (1997). Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, 8-11 December 1996. Piscataway, NJ, United States: IEEE. doi: 10.1109/COMMAD.1996.610091 |
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1997 Journal Article Ion beam induced damage in InP during heavy-ion elastic recoil detection analysisWalker, S. R., Johnston, P. N., Bubb, I. F., Stannard, W. B., Zhou, Jin, Jamieson, D. N., Dooley, S. P., Cohen, D. D. and Dytlewski, N. (1997). Ion beam induced damage in InP during heavy-ion elastic recoil detection analysis. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 130 (1-4), 166-170. doi: 10.1016/s0168-583x(97)00167-5 |
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1997 Conference Publication {111} and {311} rod-like defects in silicon ion implanted siliconChou, C. T., Cockayne, D. J. H., Zou, J., Kringhøj, P. and Jagadish, C (1997). {111} and {311} rod-like defects in silicon ion implanted silicon. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, 8-11 December 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610131 |
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1997 Conference Publication The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructuresGlasko, JM, Zou, J, Cockayne, DJH, Gerald, JF, Kringhoj, P and Elliman, RG (1997). The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures. Symposium on Defects in Electronic Materials II, at the Combined Meeting of the Materials-Research-Society / International Conference on Electronic Materials, Boston Ma, Dec 02-06, 1996. WARRENDALE: MATERIALS RESEARCH SOCIETY. |
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1997 Journal Article Diffraction behaviour of three-component fibonacci Ta/Al multilayer filmsJiang, S. S., Peng, R. W., Hu, A., Zou, J., Cockayne, D. J. H. and Sikorski, A. (1997). Diffraction behaviour of three-component fibonacci Ta/Al multilayer films. Journal of Applied Crystallography, 30 (2), 114-117. doi: 10.1107/S0021889896010916 |
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1996 Journal Article Preferred orientation in carbon films induced by energetic condensationYin, Y, Zou, J and Mckenzie, DR (1996). Preferred orientation in carbon films induced by energetic condensation. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 119 (4), 587-590. doi: 10.1016/S0168-583X(96)00467-3 |
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1996 Journal Article Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrateKim, Y., Yuan, S., Leon, R., Jagadish, C., Gal, M., Johnston, M. B., Kalceff, M. A. S., Zou, J. and Cockayne, D. J. H. (1996). Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate. Journal of Applied Physics, 80 (9), 5014-5020. doi: 10.1063/1.363546 |
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1996 Journal Article Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayersTan, H. H., Jagadish, C., Williams, J. S., Zou, J. and Cockayne, D. J. H. (1996). Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers. Journal of Applied Physics, 80 (5), 2691-2701. doi: 10.1063/1.363186 |
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1996 Journal Article Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained‐layer heterostructuresCockayne, D. J. H. and Zou, J. (1996). Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained‐layer heterostructures. Journal of Applied Physics, 79 (10), 7632-7635. doi: 10.1063/1.361527 |
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1996 Journal Article Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dotsLeon, R., Kim, Y., Gal, M., Zou, J. and Cockayne, D. J. H. (1996). Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots. Applied Physics Letters, 69 (13), 1888-1890. doi: 10.1063/1.117467 |
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1996 Conference Publication Ion implantation processing of GaN epitaxial layersTan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ and Yuan, C (1996). Ion implantation processing of GaN epitaxial layers. 1st ECS Symposium on III-V Nitride Materials and Processes, Los Angeles Ca, May 06-08, 1996. PENNINGTON: ELECTROCHEMICAL SOCIETY INC. |
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1996 Conference Publication The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructuresGlasko, JM, Zou, J, Cockayne, DJH, Gerald, JF and Elliman, RG (1996). The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610092 |
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1996 Journal Article Damage to epitaxial GaN layers by silicon implantationTan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J. and Stall, R. A. (1996). Damage to epitaxial GaN layers by silicon implantation. Applied Physics Letters, 69 (16), 2364-2366. doi: 10.1063/1.117526 |
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1996 Conference Publication Strain relief and interfacial structure in ZnSe layers grown on GaAs substratesZhang, Y, Usher, BF, Riley, JD, Huang, , Zou, J, Leckey, RCG and Wolfframm, D (1996). Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610154 |
