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1998 Conference Publication TEM investigations of Si ion-implanted GaNZou, J., Cockayne, D. J. H., Duan, X. F., Tan, H. H., Williams, J. S., Pearton, S. J. and Stall, S. A. (1998). TEM investigations of Si ion-implanted GaN. 14th International Congress on Electron Microscopy, Cancún, Mexico, 31 August-4 September 1998. Bristol ; Philadelphia: Institute of Physics Publishing. |
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1998 Journal Article Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopyRussell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H. and Usher, B. F. (1998). Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy. Applied Physics Letters, 73 (26), 3899-3901. doi: 10.1063/1.122929 |
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1998 Journal Article Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dotsLiao, X. Z., Zou, J., Duan, X. F., Cockayne, D. J. H., Leon, R. and Lobo, C. (1998). Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots. Physical review. B, Condensed matter and materials physics, 58 (8), R4235-R4237. doi: 10.1103/PhysRevB.58.R4235 |
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1998 Conference Publication TEM study of compositional profile in AlGaAs/GaAs quantum wellsZou, J., Cai, D. Q., Cockayne, D. J. H. and Jagadish, C. (1998). TEM study of compositional profile in AlGaAs/GaAs quantum wells. 14th International Congress on Electron Microscopy, Cancun Mexico, 31 August - 4 September 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Journal Article Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wellsYuan, S., Kim, Y., Tan, H. H., Jagadish, C., Burke, P. T., Dao, L. V., Gal, M., Chan, M. C. Y., Li, E. H., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1998). Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells. Journal of Applied Physics, 83 (3), 1305-1311. doi: 10.1063/1.366830 |
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1998 Conference Publication Ordering, tunability, and stability in the formation of semiconductor quantum dotsLeon, R, Stevens-Kalceff, M, Zou, J, Lobo, C and Cockayne, DJH (1998). Ordering, tunability, and stability in the formation of semiconductor quantum dots. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Conference Publication On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dotsLiao, XZ, Zou, J, Cockayne, DJH, Anstis, GR and Leon, R (1998). On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dots. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD. |
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1997 Journal Article Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxyCockayne, D. J. H., Moon, A. R., Russell-Harriott, J. J. and Zou, J. (1997). Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy. Micron, 28 (4), 309-312. doi: 10.1016/S0968-4328(97)00027-9 |
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1997 Journal Article Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxyZou, J., Cockayne, D. J. H. and Russell-Harriott, J. J. (1997). Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 70 (23), 3134-3136. doi: 10.1063/1.119112 |
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1997 Journal Article Electrical and structural analysis of high-dose Si implantation in GaNZolper, JC, Tan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ, Crawford, MH and Karlicek, RF (1997). Electrical and structural analysis of high-dose Si implantation in GaN. Applied Physics Letters, 70 (20), 2729-2731. doi: 10.1063/1.119254 |
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1997 Journal Article Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealingYuan, S., Kim, Y., Jagadish, C., Burke, P. T., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1997). Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing. Applied Physics Letters, 70 (10), 1269-1271. doi: 10.1063/1.118549 |
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1997 Journal Article Ion beam induced damage in InP during heavy-ion elastic recoil detection analysisWalker, S. R., Johnston, P. N., Bubb, I. F., Stannard, W. B., Zhou, Jin, Jamieson, D. N., Dooley, S. P., Cohen, D. D. and Dytlewski, N. (1997). Ion beam induced damage in InP during heavy-ion elastic recoil detection analysis. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 130 (1-4), 166-170. doi: 10.1016/s0168-583x(97)00167-5 |
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1997 Conference Publication Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAsRussellharriott, J. J., Zou, J., Cockayne, D. J. H., Moon, A. R. and Usher, B. F. (1997). Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, 8-11 December 1996. Piscataway, NJ, United States: IEEE. doi: 10.1109/COMMAD.1996.610091 |
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1997 Conference Publication The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructuresGlasko, JM, Zou, J, Cockayne, DJH, Gerald, JF, Kringhoj, P and Elliman, RG (1997). The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures. Symposium on Defects in Electronic Materials II, at the Combined Meeting of the Materials-Research-Society / International Conference on Electronic Materials, Boston Ma, Dec 02-06, 1996. WARRENDALE: MATERIALS RESEARCH SOCIETY. |
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1997 Conference Publication {111} and {311} rod-like defects in silicon ion implanted siliconChou, C. T., Cockayne, D. J. H., Zou, J., Kringhøj, P. and Jagadish, C (1997). {111} and {311} rod-like defects in silicon ion implanted silicon. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, 8-11 December 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610131 |
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1997 Journal Article Diffraction behaviour of three-component fibonacci Ta/Al multilayer filmsJiang, S. S., Peng, R. W., Hu, A., Zou, J., Cockayne, D. J. H. and Sikorski, A. (1997). Diffraction behaviour of three-component fibonacci Ta/Al multilayer films. Journal of Applied Crystallography, 30 (2), 114-117. doi: 10.1107/S0021889896010916 |
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1997 Conference Publication Misfit dislocations nucleated from the surface in strained-layer heterostructuresCockayne, D. J. H. and Zou, J. (1997). Misfit dislocations nucleated from the surface in strained-layer heterostructures. Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD 96, Canberra, Australia, 8-11 December 1996. New York ; Piscataway, NJ: Institute of Electrical and Electronic Engineers : IEEE Service Center,. doi: 10.1109/COMMAD.1996.610129 |
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1996 Journal Article Preferred orientation in carbon films induced by energetic condensationYin, Y, Zou, J and Mckenzie, DR (1996). Preferred orientation in carbon films induced by energetic condensation. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 119 (4), 587-590. doi: 10.1016/S0168-583X(96)00467-3 |
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1996 Journal Article Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrateKim, Y., Yuan, S., Leon, R., Jagadish, C., Gal, M., Johnston, M. B., Kalceff, M. A. S., Zou, J. and Cockayne, D. J. H. (1996). Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate. Journal of Applied Physics, 80 (9), 5014-5020. doi: 10.1063/1.363546 |
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1996 Journal Article Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayersTan, H. H., Jagadish, C., Williams, J. S., Zou, J. and Cockayne, D. J. H. (1996). Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers. Journal of Applied Physics, 80 (5), 2691-2701. doi: 10.1063/1.363186 |
