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1997 Conference Publication The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructuresGlasko, JM, Zou, J, Cockayne, DJH, Gerald, JF, Kringhoj, P and Elliman, RG (1997). The effect of ion-implantation induced defects on strain relaxation in GexSi1-x/Si heterostructures. Symposium on Defects in Electronic Materials II, at the Combined Meeting of the Materials-Research-Society / International Conference on Electronic Materials, Boston Ma, Dec 02-06, 1996. WARRENDALE: MATERIALS RESEARCH SOCIETY. |
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1997 Journal Article Diffraction behaviour of three-component fibonacci Ta/Al multilayer filmsJiang, S. S., Peng, R. W., Hu, A., Zou, J., Cockayne, D. J. H. and Sikorski, A. (1997). Diffraction behaviour of three-component fibonacci Ta/Al multilayer films. Journal of Applied Crystallography, 30 (2), 114-117. doi: 10.1107/S0021889896010916 |
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1997 Conference Publication Misfit dislocations nucleated from the surface in strained-layer heterostructuresCockayne, D. J. H. and Zou, J. (1997). Misfit dislocations nucleated from the surface in strained-layer heterostructures. Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD 96, Canberra, Australia, 8-11 December 1996. New York ; Piscataway, NJ: Institute of Electrical and Electronic Engineers : IEEE Service Center,. doi: 10.1109/COMMAD.1996.610129 |
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1997 Conference Publication Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAsRussellharriott, J. J., Zou, J., Cockayne, D. J. H., Moon, A. R. and Usher, B. F. (1997). Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, 8-11 December 1996. Piscataway, NJ, United States: IEEE. doi: 10.1109/COMMAD.1996.610091 |
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1996 Journal Article Preferred orientation in carbon films induced by energetic condensationYin, Y, Zou, J and Mckenzie, DR (1996). Preferred orientation in carbon films induced by energetic condensation. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 119 (4), 587-590. doi: 10.1016/S0168-583X(96)00467-3 |
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1996 Journal Article Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrateKim, Y., Yuan, S., Leon, R., Jagadish, C., Gal, M., Johnston, M. B., Kalceff, M. A. S., Zou, J. and Cockayne, D. J. H. (1996). Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate. Journal of Applied Physics, 80 (9), 5014-5020. doi: 10.1063/1.363546 |
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1996 Journal Article Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayersTan, H. H., Jagadish, C., Williams, J. S., Zou, J. and Cockayne, D. J. H. (1996). Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers. Journal of Applied Physics, 80 (5), 2691-2701. doi: 10.1063/1.363186 |
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1996 Journal Article Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained‐layer heterostructuresCockayne, D. J. H. and Zou, J. (1996). Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained‐layer heterostructures. Journal of Applied Physics, 79 (10), 7632-7635. doi: 10.1063/1.361527 |
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1996 Journal Article Temperature‐dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructuresZou, J, Cockayne, DJH and Usher, BF (1996). Temperature‐dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures. Applied Physics Letters, 68 (5), 673-675. doi: 10.1063/1.116587 |
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1996 Journal Article Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructuresZou, J. and Cockayne, D. J. H. (1996). Lomer–Cottrell misfit dislocations in [001] In0.2Ga0.8As/GaAs single heterostructures. Applied Physics Letters, 69 (8), 1083-1085. doi: 10.1063/1.117065 |
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1996 Conference Publication V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealingKim, Y, Yuan, S, Leon, R, Clark, A, Jagadish, C, Johnston, MB, Burke, P, Gal, M, Zou, J, Cockayne, D, Phillips, MR and Kalceff, MAS (1996). V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610106 |
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1996 Journal Article The application of the cathodic arc to plasma assisted chemical vapor deposition of carboYin, Y, Zou, J and Das, A (1996). The application of the cathodic arc to plasma assisted chemical vapor deposition of carbo. Journal of Applied Physics, 79 (3), 1563-1568. doi: 10.1063/1.362649 |
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1996 Journal Article Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dotsLeon, R., Kim, Y., Gal, M., Zou, J. and Cockayne, D. J. H. (1996). Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots. Applied Physics Letters, 69 (13), 1888-1890. doi: 10.1063/1.117467 |
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1996 Conference Publication Ion implantation processing of GaN epitaxial layersTan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ and Yuan, C (1996). Ion implantation processing of GaN epitaxial layers. 1st ECS Symposium on III-V Nitride Materials and Processes, Los Angeles Ca, May 06-08, 1996. PENNINGTON: ELECTROCHEMICAL SOCIETY INC. |
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1996 Conference Publication The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructuresGlasko, JM, Zou, J, Cockayne, DJH, Gerald, JF and Elliman, RG (1996). The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610092 |
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1996 Journal Article Damage to epitaxial GaN layers by silicon implantationTan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J. and Stall, R. A. (1996). Damage to epitaxial GaN layers by silicon implantation. Applied Physics Letters, 69 (16), 2364-2366. doi: 10.1063/1.117526 |
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1996 Conference Publication Strain relief and interfacial structure in ZnSe layers grown on GaAs substratesZhang, Y, Usher, BF, Riley, JD, Huang, , Zou, J, Leckey, RCG and Wolfframm, D (1996). Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra Australia, Dec 08-11, 1996. NEW YORK: I E E E. doi: 10.1109/COMMAD.1996.610154 |
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1995 Journal Article {111} defects in 1-MeV-silicon-ion-implanted siliconChou, C. T., Cockayne, D. J. H., Zou, J., Kringhoj, P. and Jagadish, C. (1995). {111} defects in 1-MeV-silicon-ion-implanted silicon. Physical Review B, 52 (24), 17223-17230. doi: 10.1103/PhysRevB.52.17223 |
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1995 Journal Article Ion damage buildup and amorphization processes in AlxGa1-xAsTan, H. H., Jagadish, C., Williams, J. S., Zou, J., Cockayne, D. J. H. and Sikorski, A. (1995). Ion damage buildup and amorphization processes in AlxGa1-xAs. Journal of Applied Physics, 77 (1), 87-94. doi: 10.1063/1.359358 |
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1995 Conference Publication Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructuresZou, J. and Cockayne, D. J. H. (1995). Misfit dislocation generation from dissociated threading dislocations in strained-layer heterostructures. 2nd International Conference on the Role of Interfaces in Advanced Materials Design, Processing and Performance, Ballarat, Australia, 1-5 November 1993. Switzerland, Germany: Trans Tech Publications. doi: 10.4028/www.scientific.net/MSF.189-190.279 |
