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1998 Journal Article A new type of dissociated misfit dislocation in [001] ZnTe/GaAs strained-layer heterostructuresHan, P. D. and Zou, J. (1998). A new type of dissociated misfit dislocation in [001] ZnTe/GaAs strained-layer heterostructures. Applied Physics Letters, 72 (19), 2424-2426. doi: 10.1063/1.121374 |
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1998 Conference Publication TEM study of compositional profile in AlGaAs/GaAs quantum wellsZou, J., Cai, D. Q., Cockayne, D. J. H. and Jagadish, C. (1998). TEM study of compositional profile in AlGaAs/GaAs quantum wells. 14th International Congress on Electron Microscopy, Cancun Mexico, 31 August - 4 September 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Journal Article Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wellsYuan, S., Kim, Y., Tan, H. H., Jagadish, C., Burke, P. T., Dao, L. V., Gal, M., Chan, M. C. Y., Li, E. H., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1998). Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells. Journal of Applied Physics, 83 (3), 1305-1311. doi: 10.1063/1.366830 |
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1998 Conference Publication On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dotsLiao, XZ, Zou, J, Cockayne, DJH, Anstis, GR and Leon, R (1998). On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dots. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Conference Publication Ordering, tunability, and stability in the formation of semiconductor quantum dotsLeon, R, Stevens-Kalceff, M, Zou, J, Lobo, C and Cockayne, DJH (1998). Ordering, tunability, and stability in the formation of semiconductor quantum dots. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Journal Article Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting TransformationLeon, R., Lobo, C., Zou, J. and Cockayne, D. J. H. (1998). Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting Transformation. Physical Review Letters, 81 (12), 2486-2489. doi: 10.1103/PhysRevLett.81.2486 |
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1998 Conference Publication Oval defects in InGaAs/GaAs heterostructuresRussell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H. and Usher, B. F. (1998). Oval defects in InGaAs/GaAs heterostructures. 14th International Congress on Electron Microscopy, Cancun, Mexico, 31 August - 4 September 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Journal Article Annealing of ion implanted gallium nitrideTan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Zolper, J. C. and Stall, R. A. (1998). Annealing of ion implanted gallium nitride. Applied Physics Letters, 72 (10), 1190-1192. doi: 10.1063/1.121030 |
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1998 Journal Article Comments on "Characterization of the Fe-Al interfacial layer in a commercial hot-dip galvanized coating"Liao, XZ and Zou, J (1998). Comments on "Characterization of the Fe-Al interfacial layer in a commercial hot-dip galvanized coating". Isij International, 38 (5), 506-506. doi: 10.2355/isijinternational.38.506 |
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1998 Journal Article Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperatureGlasko, J. M., Zou, J., Cockayne, D. J. H. and Fitz Gerald, J. D. (1998). Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature. Applied Physics Letters, 73 (6), 838-840. doi: 10.1063/1.122018 |
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1998 Conference Publication TEM study of intermetallic phases in 55Al-Zn coatingsZou, J, Liao, XZ, Duan, XF, Durandet, Y and Cockayne, DJH (1998). TEM study of intermetallic phases in 55Al-Zn coatings. 14th International Congress on Electron Microscopy, Cancun Mexico, Aug 31-Sep 04, 1998. BRISTOL: IOP PUBLISHING LTD. |
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1998 Conference Publication TEM investigations of Si ion-implanted GaNZou, J., Cockayne, D. J. H., Duan, X. F., Tan, H. H., Williams, J. S., Pearton, S. J. and Stall, S. A. (1998). TEM investigations of Si ion-implanted GaN. 14th International Congress on Electron Microscopy, Cancún, Mexico, 31 August-4 September 1998. Bristol ; Philadelphia: Institute of Physics Publishing. |
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1998 Journal Article Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopyRussell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H. and Usher, B. F. (1998). Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy. Applied Physics Letters, 73 (26), 3899-3901. doi: 10.1063/1.122929 |
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1998 Journal Article Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dotsLiao, X. Z., Zou, J., Duan, X. F., Cockayne, D. J. H., Leon, R. and Lobo, C. (1998). Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots. Physical review. B, Condensed matter and materials physics, 58 (8), R4235-R4237. doi: 10.1103/PhysRevB.58.R4235 |
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1997 Journal Article Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxyCockayne, D. J. H., Moon, A. R., Russell-Harriott, J. J. and Zou, J. (1997). Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy. Micron, 28 (4), 309-312. doi: 10.1016/S0968-4328(97)00027-9 |
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1997 Journal Article Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxyZou, J., Cockayne, D. J. H. and Russell-Harriott, J. J. (1997). Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 70 (23), 3134-3136. doi: 10.1063/1.119112 |
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1997 Journal Article Electrical and structural analysis of high-dose Si implantation in GaNZolper, JC, Tan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ, Crawford, MH and Karlicek, RF (1997). Electrical and structural analysis of high-dose Si implantation in GaN. Applied Physics Letters, 70 (20), 2729-2731. doi: 10.1063/1.119254 |
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1997 Journal Article Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealingYuan, S., Kim, Y., Jagadish, C., Burke, P. T., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1997). Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing. Applied Physics Letters, 70 (10), 1269-1271. doi: 10.1063/1.118549 |
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1997 Conference Publication Misfit dislocations nucleated from the surface in strained-layer heterostructuresCockayne, D. J. H. and Zou, J. (1997). Misfit dislocations nucleated from the surface in strained-layer heterostructures. Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD 96, Canberra, Australia, 8-11 December 1996. New York ; Piscataway, NJ: Institute of Electrical and Electronic Engineers : IEEE Service Center,. doi: 10.1109/COMMAD.1996.610129 |
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1997 Conference Publication Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAsRussellharriott, J. J., Zou, J., Cockayne, D. J. H., Moon, A. R. and Usher, B. F. (1997). Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs. 1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9), Canberra, Australia, 8-11 December 1996. Piscataway, NJ, United States: IEEE. doi: 10.1109/COMMAD.1996.610091 |
