|
2003 Book Chapter Transmission electron microscopy investigation of semi conductor quantum dotsZou, J. and Liao, X. Z. (2003). Transmission electron microscopy investigation of semi conductor quantum dots. 透射电子显微学进展. (pp. 552-574) edited by Hengqiang Ye and Yuanming Wang. Bejing, China: Science Press. |
|
2003 Conference Publication TEM investigations of the compositions in Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J. and Cockayne, D. J. H. (2003). TEM investigations of the compositions in Ge(Si)/Si(001) quantum dots. VII InterAmerican Congress on Electron Microscopy, San Antonio, Texas, 3 - 7 August, 2003. New York, N.Y. U.S.A.: Microscopy Society of America. doi: 10.1017/s143192760344213x |
|
2002 Journal Article Ion-beam-produced damage and its stability in AlN filmsKucheyev, SO, Williams, JS, Zou, J, Jagadish, C, Pophristic, M, Guo, S, Ferguson, IT and Manasreh, MO (2002). Ion-beam-produced damage and its stability in AlN films. Journal of Applied Physics, 92 (7), 3554-3558. doi: 10.1063/1.1501746 |
|
2002 Journal Article Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growthZou, J., Liao, X. Z., Cockayne, D. J. H. and Jiang, Z. M. (2002). Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth. Applied Physics Letters, 81 (11), 1996-1998. doi: 10.1063/1.1506414 |
|
2002 Journal Article Structural disorder in ion-implanted AlxGa1-xNKucheyev, S. O., Williams, J. S., Zou, J., Li, G., Jagadish, C., Manasreh, M. O., Pophristic, M., Guo, S. and Ferguson, I. T. (2002). Structural disorder in ion-implanted AlxGa1-xN. Applied Physics Letters, 80 (5), 787-789. doi: 10.1063/1.1445478 |
|
2002 Journal Article Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperatureKucheyev, SO, Williams, JS, Zou, J, Li, G, Jagadish, C and Titov, AI (2002). Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 190 (1-4), 782-786. doi: 10.1016/S0168-583X(01)01309-X |
|
2002 Journal Article Large-quantity production of high-yield boron nitride nanotubesChen, Y, Conway, M, Williams, JS and Zou, J (2002). Large-quantity production of high-yield boron nitride nanotubes. Journal of Materials Research, 17 (8), 1896-1899. doi: 10.1557/JMR.2002.0281 |
|
2002 Conference Publication Composition distributions in Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J. and Cockayne, David J. H. (2002). Composition distributions in Ge(Si)/Si(001) quantum dots. 15th International Congress on Electron Microscopy (ICEM), Durban, South Africa, 1-6 September, 2002. |
|
2002 Journal Article Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical propertiesLeon, R, Chaparro, S, Johnson, SR, Navarro, C, Jin, X, Zhang, YH, Siegert, J, Marcinkevicius, S, Liao, XZ and Zou, J (2002). Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties. Journal of Applied Physics, 91 (9), 5826-5830. doi: 10.1063/1.1467963 |
|
2002 Conference Publication 314 HRTEM Studies of Plastic Deformation in Silicon Wafers due to Micro IndentationZarudi, I., Zou, J. and Zhang, L (2002). 314 HRTEM Studies of Plastic Deformation in Silicon Wafers due to Micro Indentation. Materials Processing, Honolulu, Hawaii, 14 - 18 October, 2002. |
|
2002 Conference Publication Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structureGao, Q., Tan, H. H., Jagadish, C., Sun, B. Q., Gal, M., Ouyang, L. and Zou, J. (2002). Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structure. Optoelectronic and Microelecttronic Materials and Devices, University of Sydney, NSW, Australia, 11 - 13 December, 2002. NEW YORK: Institute of Electrical and Electronics Engineers. doi: 10.1109/COMMAD.2002.1237238 |
|
2002 Journal Article Blistering of H-implanted GaNKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2002). Blistering of H-implanted GaN. Journal of Applied Physics, 91 (6), 3928-3930. doi: 10.1063/1.1430533 |
|
2002 Journal Article Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imagingCai, DQ, Zou, J, Chen, GB, Lu, W, Chen, XS and Ringer, SP (2002). Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imaging. Scripta Materialia, 47 (4), 279-283. doi: 10.1016/S1359-6462(02)00144-6 |
|
2002 Conference Publication Formation of misfit dislocations form island surface in Ge(Si)/Si quantum dotsZou, J. (2002). Formation of misfit dislocations form island surface in Ge(Si)/Si quantum dots. COMMAD 2002, Sydney, Australia, 11-13 December, 2002. Piscataway: IEEE. |
|
2002 Journal Article Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2002). Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots. Physical Review B, 65 (15), 153306 - 1-153306 - 4. doi: 10.1103/PhysRevB.65.153306 |
|
2002 Conference Publication Strain relaxation in self-assembled Ge(Si)/Si quantum dotsZou, J., Liao, X. Z. and Cockayne, D. J. H. (2002). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. 15th International Congress on Electron Microscopy, Durban, South Africa, 1-6 September 2002. Onderstepoort, South Africa: Microscopy Society of Southern Africa. |
|
2002 Conference Publication Microstructure and optical properties of Ge(Si) dots grown on SiWan, Jun, Tong, Song, Jiang, Zhimei, Jin, Gaolong, Lou, Y. H., Liu, Jian-Lin, Liao, Xiaozhou, Zou, Jin and Wang, Kang L. (2002). Microstructure and optical properties of Ge(Si) dots grown on Si. Quantum Dot Devices and Computing, San Jose, CA, USA, 21 January, 2002. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING. doi: 10.1117/12.460806 |
|
2002 Conference Publication Atomistic structure changes in monocrystalline silicon during nano-sliding and nano-indentationZarudi, I., Zou, J. and Zhang, L. C. (2002). Atomistic structure changes in monocrystalline silicon during nano-sliding and nano-indentation. 10th Foresight Conference on Molecular Nanotechnology, Bethesda, Washington, USA, 11-13 October, 2002. Online: Foresight Institute. |
|
2002 Conference Publication Structural electrical and optical properties of MeV ion implanted InPCarmody, C., Tan, H. H., Jagadish, C., Zou, J., Dao, L. and Gal, M. (2002). Structural electrical and optical properties of MeV ion implanted InP. Optoelectronic and Microelecttronic Materials and Devices, Sydney, 9 - 113 December, 2002. NEW YORK: IEEE. doi: 10.1109/COMMAD.2002.1237296 |
|
2001 Journal Article Effects of interdiffusion on the band alignment of GeSi dotsWan, J., Luo, Y. H., Jiang, Z. M., Jin, G., Liu, J. L., Wang, K. L., Liao, X. Z. and Zou, J. (2001). Effects of interdiffusion on the band alignment of GeSi dots. Applied Physics Letters, 79 (13), 1980-1982. doi: 10.1063/1.1405152 |
