|
2002 Journal Article Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imagingCai, DQ, Zou, J, Chen, GB, Lu, W, Chen, XS and Ringer, SP (2002). Determination of Al compositional profiles across AlAs/GaAs heterostructural interface at sub-nanometer spatial resolution by thickness fringe imaging. Scripta Materialia, 47 (4), 279-283. doi: 10.1016/S1359-6462(02)00144-6 |
|
2002 Conference Publication Formation of misfit dislocations form island surface in Ge(Si)/Si quantum dotsZou, J. (2002). Formation of misfit dislocations form island surface in Ge(Si)/Si quantum dots. COMMAD 2002, Sydney, Australia, 11-13 December, 2002. Piscataway: IEEE. |
|
2002 Journal Article Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dotsLiao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2002). Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots. Physical Review B, 65 (15), 153306 - 1-153306 - 4. doi: 10.1103/PhysRevB.65.153306 |
|
2002 Conference Publication Atomistic structure changes in monocrystalline silicon during nano-sliding and nano-indentationZarudi, I., Zou, J. and Zhang, L. C. (2002). Atomistic structure changes in monocrystalline silicon during nano-sliding and nano-indentation. 10th Foresight Conference on Molecular Nanotechnology, Bethesda, Washington, USA, 11-13 October, 2002. Online: Foresight Institute. |
|
2002 Conference Publication Strain relaxation in self-assembled Ge(Si)/Si quantum dotsZou, J., Liao, X. Z. and Cockayne, D. J. H. (2002). Strain relaxation in self-assembled Ge(Si)/Si quantum dots. 15th International Congress on Electron Microscopy, Durban, South Africa, 1-6 September 2002. Onderstepoort, South Africa: Microscopy Society of Southern Africa. |
|
2002 Conference Publication Structural electrical and optical properties of MeV ion implanted InPCarmody, C., Tan, H. H., Jagadish, C., Zou, J., Dao, L. and Gal, M. (2002). Structural electrical and optical properties of MeV ion implanted InP. Optoelectronic and Microelecttronic Materials and Devices, Sydney, 9 - 113 December, 2002. NEW YORK: IEEE. doi: 10.1109/COMMAD.2002.1237296 |
|
2001 Journal Article Effects of interdiffusion on the band alignment of GeSi dotsWan, J., Luo, Y. H., Jiang, Z. M., Jin, G., Liu, J. L., Wang, K. L., Liao, X. Z. and Zou, J. (2001). Effects of interdiffusion on the band alignment of GeSi dots. Applied Physics Letters, 79 (13), 1980-1982. doi: 10.1063/1.1405152 |
|
2001 Journal Article Annealing effects on the microstructure of Ge/Si(001) quantum dotsLiao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2001). Annealing effects on the microstructure of Ge/Si(001) quantum dots. Applied Physics Letters, 79 (9), 1258-1260. doi: 10.1063/1.1398615 |
|
2001 Journal Article Implantation-produced structural damage in InxGa1-xNKucheyev, S. O., Williams, J. S., Zou, J., Pearton, S. J. and Nakagawa, Y. (2001). Implantation-produced structural damage in InxGa1-xN. Applied Physics Letters, 79 (5), 602-604. doi: 10.1063/1.1388881 |
|
2001 Journal Article Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturesKucheyev, S. O., Williams, J. S., Zou, J., Jagadish, C. and Li, G. (2001). Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures. Applied Physics Letters, 78 (10), 1373-1375. doi: 10.1063/1.1347010 |
|
2001 Journal Article Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast imagesLiao, XZ, Zou, J, Cockayne, DJH, Jiang, ZM and Wang, X (2001). Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images. Journal of Applied Physics, 90 (6), 2725-2729. doi: 10.1063/1.1394900 |
|
2001 Journal Article High-dose ion implantation into GaNKucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001). High-dose ion implantation into GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175, 214-218. doi: 10.1016/S0168-583X(00)00672-8 |
|
2001 Book Chapter Transmission electron microscopy investigations of misfit dislocations in lattice mismatched semiconductor heterostructuresZou, J. and Cockayne, D. J. H. (2001). Transmission electron microscopy investigations of misfit dislocations in lattice mismatched semiconductor heterostructures. Progress in Transmission electron Microscopy 2: Applications in Materials Science. (pp. 247-266) edited by Xiao-Feng Zhang and Ze Zhang. Berlin, Germany: Springer. |
|
2001 Journal Article Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wireFu, Y, Willander, M, Liu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001). Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire. Journal of Applied Physics, 89 (4), 2351-2356. doi: 10.1063/1.1339857 |
|
2001 Journal Article Ion-beam-induced reconstruction of amorphous GaNKucheyev, S. O., Williams, J. S., Zou, J., Bradby, J. E., Jagadish, C. and Li, G. (2001). Ion-beam-induced reconstruction of amorphous GaN. Physical Review B, 63 (11), 113202-1-113202-4. doi: 10.1103/PhysRevB.63.113202 |
|
2001 Journal Article Characterisation of the structure and composition of quantum dotsCockayne, DJH, Lang, C, Liao, XZ and Zou, J (2001). Characterisation of the structure and composition of quantum dots. Electron Microscopy And Analysis 2001 (168), 425-428. |
|
2001 Journal Article The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNKucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001). The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 178 (1-4), 209-213. doi: 10.1016/S0168-583X(00)00459-6 |
|
2001 Journal Article Carrier transfer between V-grooved quantum wire and vertical quantum wellLu, W, Liu, XQ, Li, ZF, Shen, SC, Zhao, QX, Fu, Y, Willander, M, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001). Carrier transfer between V-grooved quantum wire and vertical quantum well. Physics Letters A, 280 (1-2), 77-80. doi: 10.1016/S0375-9601(01)00022-6 |
|
2001 Journal Article Self-ion-induced swelling of germaniumStritzker, B, Elliman, RG and Zou, J (2001). Self-ion-induced swelling of germanium. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175, 193-196. doi: 10.1016/S0168-583X(00)00597-8 |
|
2001 Journal Article Ge/Si interdiffusion in the GeSi dots and wetting layersWan, J, Luo, YH, Jiang, ZM, Jin, G, Liu, JL, Wang, KL, Liao, XZ and Zou, J (2001). Ge/Si interdiffusion in the GeSi dots and wetting layers. Journal of Applied Physics, 90 (8), 4290-4292. doi: 10.1063/1.1403667 |
