|
2002 Journal Article Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical propertiesLeon, R, Chaparro, S, Johnson, SR, Navarro, C, Jin, X, Zhang, YH, Siegert, J, Marcinkevicius, S, Liao, XZ and Zou, J (2002). Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties. Journal of Applied Physics, 91 (9), 5826-5830. doi: 10.1063/1.1467963 |
|
2002 Conference Publication 314 HRTEM Studies of Plastic Deformation in Silicon Wafers due to Micro IndentationZarudi, I., Zou, J. and Zhang, L (2002). 314 HRTEM Studies of Plastic Deformation in Silicon Wafers due to Micro Indentation. Materials Processing, Honolulu, Hawaii, 14 - 18 October, 2002. |
|
2002 Conference Publication Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structureGao, Q., Tan, H. H., Jagadish, C., Sun, B. Q., Gal, M., Ouyang, L. and Zou, J. (2002). Growth and characterization of GaAsN epilayer and (In)GaAsN qutantum-well structure. Optoelectronic and Microelecttronic Materials and Devices, University of Sydney, NSW, Australia, 11 - 13 December, 2002. NEW YORK: Institute of Electrical and Electronics Engineers. doi: 10.1109/COMMAD.2002.1237238 |
|
2001 Journal Article Effects of interdiffusion on the band alignment of GeSi dotsWan, J., Luo, Y. H., Jiang, Z. M., Jin, G., Liu, J. L., Wang, K. L., Liao, X. Z. and Zou, J. (2001). Effects of interdiffusion on the band alignment of GeSi dots. Applied Physics Letters, 79 (13), 1980-1982. doi: 10.1063/1.1405152 |
|
2001 Journal Article Annealing effects on the microstructure of Ge/Si(001) quantum dotsLiao, X. Z., Zou, J., Cockayne, D. J. H., Wan, J., Jiang, Z. M., Jin, G. and Wang, K. L. (2001). Annealing effects on the microstructure of Ge/Si(001) quantum dots. Applied Physics Letters, 79 (9), 1258-1260. doi: 10.1063/1.1398615 |
|
2001 Journal Article Implantation-produced structural damage in InxGa1-xNKucheyev, S. O., Williams, J. S., Zou, J., Pearton, S. J. and Nakagawa, Y. (2001). Implantation-produced structural damage in InxGa1-xN. Applied Physics Letters, 79 (5), 602-604. doi: 10.1063/1.1388881 |
|
2001 Journal Article Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturesKucheyev, S. O., Williams, J. S., Zou, J., Jagadish, C. and Li, G. (2001). Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures. Applied Physics Letters, 78 (10), 1373-1375. doi: 10.1063/1.1347010 |
|
2001 Journal Article Carrier transfer between V-grooved quantum wire and vertical quantum wellLu, W, Liu, XQ, Li, ZF, Shen, SC, Zhao, QX, Fu, Y, Willander, M, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001). Carrier transfer between V-grooved quantum wire and vertical quantum well. Physics Letters A, 280 (1-2), 77-80. doi: 10.1016/S0375-9601(01)00022-6 |
|
2001 Journal Article The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNKucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001). The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 178 (1-4), 209-213. doi: 10.1016/S0168-583X(00)00459-6 |
|
2001 Journal Article Self-ion-induced swelling of germaniumStritzker, B, Elliman, RG and Zou, J (2001). Self-ion-induced swelling of germanium. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175, 193-196. doi: 10.1016/S0168-583X(00)00597-8 |
|
2001 Journal Article Ge/Si interdiffusion in the GeSi dots and wetting layersWan, J, Luo, YH, Jiang, ZM, Jin, G, Liu, JL, Wang, KL, Liao, XZ and Zou, J (2001). Ge/Si interdiffusion in the GeSi dots and wetting layers. Journal of Applied Physics, 90 (8), 4290-4292. doi: 10.1063/1.1403667 |
|
2001 Journal Article The morphology and composition of quantum dotsCockayne, DJH, Liao, XZ and Zou, J (2001). The morphology and composition of quantum dots. Microscopy of Semiconducting Materials 2001 (169), 77-83. |
|
2001 Book Chapter Transmission electron microscopy investigations of misfit dislocations in lattice mismatched semiconductor heterostructuresZou, J. and Cockayne, D. J. H. (2001). Transmission electron microscopy investigations of misfit dislocations in lattice mismatched semiconductor heterostructures. Progress in Transmission electron Microscopy 2: Applications in Materials Science. (pp. 247-266) edited by Xiao-Feng Zhang and Ze Zhang. Berlin, Germany: Springer. |
|
2001 Journal Article Effect of ion species on the accumulation of ion-beam damage in GaNKucheyev, SO, Williams, JS, Jagadish, C, Zou, J, Li, G and Titov, AI (2001). Effect of ion species on the accumulation of ion-beam damage in GaN. Physical Review B, 6403 (3), art. no.-035202. doi: 10.1103/PhysRevB.64.035202 |
|
2001 Journal Article Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structuresLiu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C and Zou, J (2001). Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures. Journal of Nanoscience And Nanotechnology, 1 (4), 389-392. doi: 10.1166/jnn.2001.064 |
|
2001 Journal Article Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast imagesLiao, XZ, Zou, J, Cockayne, DJH, Jiang, ZM and Wang, X (2001). Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images. Journal of Applied Physics, 90 (6), 2725-2729. doi: 10.1063/1.1394900 |
|
2001 Journal Article Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wireFu, Y, Willander, M, Liu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001). Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire. Journal of Applied Physics, 89 (4), 2351-2356. doi: 10.1063/1.1339857 |
|
2001 Journal Article High-dose ion implantation into GaNKucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001). High-dose ion implantation into GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175, 214-218. doi: 10.1016/S0168-583X(00)00672-8 |
|
2001 Journal Article Ion-beam-induced reconstruction of amorphous GaNKucheyev, S. O., Williams, J. S., Zou, J., Bradby, J. E., Jagadish, C. and Li, G. (2001). Ion-beam-induced reconstruction of amorphous GaN. Physical Review B, 63 (11) 113202, 113202-1-113202-4. doi: 10.1103/PhysRevB.63.113202 |
|
2001 Journal Article Characterisation of the structure and composition of quantum dotsCockayne, DJH, Lang, C, Liao, XZ and Zou, J (2001). Characterisation of the structure and composition of quantum dots. Electron Microscopy And Analysis 2001 (168), 425-428. |
