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2001 Journal Article Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast imagesLiao, XZ, Zou, J, Cockayne, DJH, Jiang, ZM and Wang, X (2001). Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images. Journal of Applied Physics, 90 (6), 2725-2729. doi: 10.1063/1.1394900 |
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2001 Journal Article Carrier transfer between V-grooved quantum wire and vertical quantum wellLu, W, Liu, XQ, Li, ZF, Shen, SC, Zhao, QX, Fu, Y, Willander, M, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001). Carrier transfer between V-grooved quantum wire and vertical quantum well. Physics Letters A, 280 (1-2), 77-80. doi: 10.1016/S0375-9601(01)00022-6 |
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2001 Journal Article High-dose ion implantation into GaNKucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001). High-dose ion implantation into GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175, 214-218. doi: 10.1016/S0168-583X(00)00672-8 |
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2001 Journal Article Ion-beam-induced reconstruction of amorphous GaNKucheyev, S. O., Williams, J. S., Zou, J., Bradby, J. E., Jagadish, C. and Li, G. (2001). Ion-beam-induced reconstruction of amorphous GaN. Physical Review B, 63 (11) 113202, 113202-1-113202-4. doi: 10.1103/PhysRevB.63.113202 |
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2001 Journal Article Characterisation of the structure and composition of quantum dotsCockayne, DJH, Lang, C, Liao, XZ and Zou, J (2001). Characterisation of the structure and composition of quantum dots. Electron Microscopy And Analysis 2001 (168), 425-428. |
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2001 Journal Article The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNKucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001). The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 178 (1-4), 209-213. doi: 10.1016/S0168-583X(00)00459-6 |
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2001 Book Chapter Transmission electron microscopy investigations of misfit dislocations in lattice mismatched semiconductor heterostructuresZou, J. and Cockayne, D. J. H. (2001). Transmission electron microscopy investigations of misfit dislocations in lattice mismatched semiconductor heterostructures. Progress in Transmission electron Microscopy 2: Applications in Materials Science. (pp. 247-266) edited by Xiao-Feng Zhang and Ze Zhang. Berlin, Germany: Springer. |
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2001 Journal Article Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wireFu, Y, Willander, M, Liu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001). Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire. Journal of Applied Physics, 89 (4), 2351-2356. doi: 10.1063/1.1339857 |
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2001 Journal Article Self-ion-induced swelling of germaniumStritzker, B, Elliman, RG and Zou, J (2001). Self-ion-induced swelling of germanium. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175, 193-196. doi: 10.1016/S0168-583X(00)00597-8 |
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2001 Journal Article Ge/Si interdiffusion in the GeSi dots and wetting layersWan, J, Luo, YH, Jiang, ZM, Jin, G, Liu, JL, Wang, KL, Liao, XZ and Zou, J (2001). Ge/Si interdiffusion in the GeSi dots and wetting layers. Journal of Applied Physics, 90 (8), 4290-4292. doi: 10.1063/1.1403667 |
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2001 Journal Article The morphology and composition of quantum dotsCockayne, DJH, Liao, XZ and Zou, J (2001). The morphology and composition of quantum dots. Microscopy of Semiconducting Materials 2001 (169), 77-83. |
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2000 Journal Article Ion-beam-induced dissociation and bubble formation in GaNKucheyev, S. O., Williams, J. S., Zou, J., Jagadish, C. and Li, G. (2000). Ion-beam-induced dissociation and bubble formation in GaN. Applied Physics Letters, 77 (22), 3577-3579. doi: 10.1063/1.1330221 |
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2000 Journal Article Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment. Journal of Applied Physics, 88 (9), 5493-5495. doi: 10.1063/1.1318361 |
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2000 Journal Article Distinguishing glide and shuffle types for 60 degrees dislocation in semicoductors by field-emission HREM image processingWang, D, Li, FH and Zou, J (2000). Distinguishing glide and shuffle types for 60 degrees dislocation in semicoductors by field-emission HREM image processing. Ultramicroscopy, 85 (3), 131-139. doi: 10.1016/S0304-3991(00)00053-X |
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2000 Journal Article Ion-beam-induced porosity of GaNKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Craig, V. S. J. and Li, G. (2000). Ion-beam-induced porosity of GaN. Applied Physics Letters, 77 (10), 1455-1457. doi: 10.1063/1.1290722 |
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2000 Journal Article Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wiresZhao, QX, Willander, M, Lu, W, Liu, XQ, Shen, SC, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2000). Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires. Journal of Applied Physics, 88 (5), 2519-2522. doi: 10.1063/1.1287119 |
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2000 Journal Article Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structuresLiu, XQ, Li, N, Li, ZF, Lu, W, Shen, SC, Fu, Y, Willander, M, Tan, HH, Jagadish, C and Zou, J (2000). Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 39 (9A), 5124-5127. doi: 10.1143/JJAP.39.5124 |
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2000 Journal Article Damage buildup in GaN under ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Damage buildup in GaN under ion bombardment. Physical Review B, 62 (11), 7510-7522. doi: 10.1103/PhysRevB.62.7510 |
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2000 Journal Article Composition and its impact on shape evolution in dislocated Ge(Si)/Si islandsLiao, X. Z., Zou, J., Cockayne, D. J. H., Jiang, Z. M., Wang, X. and Leon, R. (2000). Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands. Applied Physics Letters, 77 (9), 1304-1306. doi: 10.1063/1.1290384 |
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2000 Journal Article Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconWong-Leung, J, Fatima, S, Jagadish, C, Fitz Gerald, JD, Chou, CT, Zou, J and Cockayne, DJH (2000). Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon. Journal of Applied Physics, 88 (3), 1312-1318. doi: 10.1063/1.373819 |
