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2001 Journal Article Effect of ion species on the accumulation of ion-beam damage in GaNKucheyev, SO, Williams, JS, Jagadish, C, Zou, J, Li, G and Titov, AI (2001). Effect of ion species on the accumulation of ion-beam damage in GaN. Physical Review B, 6403 (3), art. no.-035202. doi: 10.1103/PhysRevB.64.035202 |
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2001 Journal Article Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structuresLiu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C and Zou, J (2001). Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures. Journal of Nanoscience And Nanotechnology, 1 (4), 389-392. doi: 10.1166/jnn.2001.064 |
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2001 Journal Article Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast imagesLiao, XZ, Zou, J, Cockayne, DJH, Jiang, ZM and Wang, X (2001). Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images. Journal of Applied Physics, 90 (6), 2725-2729. doi: 10.1063/1.1394900 |
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2001 Journal Article High-dose ion implantation into GaNKucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001). High-dose ion implantation into GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175, 214-218. doi: 10.1016/S0168-583X(00)00672-8 |
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2001 Book Chapter Transmission electron microscopy investigations of misfit dislocations in lattice mismatched semiconductor heterostructuresZou, J. and Cockayne, D. J. H. (2001). Transmission electron microscopy investigations of misfit dislocations in lattice mismatched semiconductor heterostructures. Progress in Transmission electron Microscopy 2: Applications in Materials Science. (pp. 247-266) edited by Xiao-Feng Zhang and Ze Zhang. Berlin, Germany: Springer. |
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2000 Journal Article Ion-beam-induced dissociation and bubble formation in GaNKucheyev, S. O., Williams, J. S., Zou, J., Jagadish, C. and Li, G. (2000). Ion-beam-induced dissociation and bubble formation in GaN. Applied Physics Letters, 77 (22), 3577-3579. doi: 10.1063/1.1330221 |
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2000 Journal Article Distinguishing glide and shuffle types for 60 degrees dislocation in semicoductors by field-emission HREM image processingWang, D, Li, FH and Zou, J (2000). Distinguishing glide and shuffle types for 60 degrees dislocation in semicoductors by field-emission HREM image processing. Ultramicroscopy, 85 (3), 131-139. doi: 10.1016/S0304-3991(00)00053-X |
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2000 Journal Article Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment. Journal of Applied Physics, 88 (9), 5493-5495. doi: 10.1063/1.1318361 |
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2000 Journal Article Ion-beam-induced porosity of GaNKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Craig, V. S. J. and Li, G. (2000). Ion-beam-induced porosity of GaN. Applied Physics Letters, 77 (10), 1455-1457. doi: 10.1063/1.1290722 |
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2000 Journal Article Damage buildup in GaN under ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Damage buildup in GaN under ion bombardment. Physical Review B, 62 (11), 7510-7522. doi: 10.1103/PhysRevB.62.7510 |
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2000 Journal Article Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wiresZhao, QX, Willander, M, Lu, W, Liu, XQ, Shen, SC, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2000). Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires. Journal of Applied Physics, 88 (5), 2519-2522. doi: 10.1063/1.1287119 |
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2000 Journal Article Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structuresLiu, XQ, Li, N, Li, ZF, Lu, W, Shen, SC, Fu, Y, Willander, M, Tan, HH, Jagadish, C and Zou, J (2000). Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 39 (9A), 5124-5127. doi: 10.1143/JJAP.39.5124 |
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2000 Journal Article Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopyRussell, JJ, Zou, J, Moon, AR and Cockayne, DJH (2000). Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy. Journal of Applied Physics, 88 (3), 1307-1311. doi: 10.1063/1.373818 |
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2000 Journal Article Composition and its impact on shape evolution in dislocated Ge(Si)/Si islandsLiao, X. Z., Zou, J., Cockayne, D. J. H., Jiang, Z. M., Wang, X. and Leon, R. (2000). Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands. Applied Physics Letters, 77 (9), 1304-1306. doi: 10.1063/1.1290384 |
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2000 Journal Article Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconWong-Leung, J, Fatima, S, Jagadish, C, Fitz Gerald, JD, Chou, CT, Zou, J and Cockayne, DJH (2000). Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon. Journal of Applied Physics, 88 (3), 1312-1318. doi: 10.1063/1.373819 |
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2000 Journal Article Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dotsLobo, C, Perret, N, Morris, D, Zou, J, Cockayne, DJH, Johnston, MB, Gal, M and Leon, R (2000). Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots. Physical Review B, 62 (4), 2737-2742. doi: 10.1103/PhysRevB.62.2737 |
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2000 Journal Article Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)Leon, R., Wellman, J., Liao, X. Z., Zou, J. and Cockayne, D. J. H. (2000). Adatom condensation and quantum dot sizes in InGaAs/GaAs (001). Applied Physics Letters, 76 (12), 1558-1560. doi: 10.1063/1.126095 |
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2000 Journal Article Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wireFu, Y, Willander, M, Lu, W, Liu, XQ, Shen, SC, Jagadish, C, Gal, M, Zou, J and Cockayne, DJH (2000). Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire. Physical Review B, 61 (12), 8306-8311. doi: 10.1103/PhysRevB.61.8306 |
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2000 Journal Article Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealingLiu, XQ, Lu, W, Chen, XS, Shen, SC, Tan, HH, Yuan, S, Jagadish, C, Johnston, MB, Dao, LV, Gal, M, Zou, J and Cockayne, DJH (2000). Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing. Journal of Applied Physics, 87 (3), 1566-1568. doi: 10.1063/1.372051 |
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2000 Journal Article Surface disordering and nitrogen loss in GaN under ion bombardmentKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Toth, M., Phillips, M. R., Tan, H. H., Li, G. and Pearton, S. J. (2000). Surface disordering and nitrogen loss in GaN under ion bombardment. Materials Research Society Symposium-Proceedings, 622, T791-T796. |
