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2001 Journal Article Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wireFu, Y, Willander, M, Liu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001). Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire. Journal of Applied Physics, 89 (4), 2351-2356. doi: 10.1063/1.1339857 |
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2001 Journal Article Ion-beam-induced reconstruction of amorphous GaNKucheyev, S. O., Williams, J. S., Zou, J., Bradby, J. E., Jagadish, C. and Li, G. (2001). Ion-beam-induced reconstruction of amorphous GaN. Physical Review B, 63 (11), 113202-1-113202-4. doi: 10.1103/PhysRevB.63.113202 |
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2001 Journal Article Characterisation of the structure and composition of quantum dotsCockayne, DJH, Lang, C, Liao, XZ and Zou, J (2001). Characterisation of the structure and composition of quantum dots. Electron Microscopy And Analysis 2001 (168), 425-428. |
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2001 Journal Article The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNKucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001). The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 178 (1-4), 209-213. doi: 10.1016/S0168-583X(00)00459-6 |
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2001 Journal Article Carrier transfer between V-grooved quantum wire and vertical quantum wellLu, W, Liu, XQ, Li, ZF, Shen, SC, Zhao, QX, Fu, Y, Willander, M, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2001). Carrier transfer between V-grooved quantum wire and vertical quantum well. Physics Letters A, 280 (1-2), 77-80. doi: 10.1016/S0375-9601(01)00022-6 |
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2001 Journal Article Self-ion-induced swelling of germaniumStritzker, B, Elliman, RG and Zou, J (2001). Self-ion-induced swelling of germanium. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 175, 193-196. doi: 10.1016/S0168-583X(00)00597-8 |
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2001 Journal Article Ge/Si interdiffusion in the GeSi dots and wetting layersWan, J, Luo, YH, Jiang, ZM, Jin, G, Liu, JL, Wang, KL, Liao, XZ and Zou, J (2001). Ge/Si interdiffusion in the GeSi dots and wetting layers. Journal of Applied Physics, 90 (8), 4290-4292. doi: 10.1063/1.1403667 |
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2001 Journal Article The morphology and composition of quantum dotsCockayne, DJH, Liao, XZ and Zou, J (2001). The morphology and composition of quantum dots. Microscopy of Semiconducting Materials 2001 (169), 77-83. |
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2001 Journal Article Effect of ion species on the accumulation of ion-beam damage in GaNKucheyev, SO, Williams, JS, Jagadish, C, Zou, J, Li, G and Titov, AI (2001). Effect of ion species on the accumulation of ion-beam damage in GaN. Physical Review B, 6403 (3), art. no.-035202. doi: 10.1103/PhysRevB.64.035202 |
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2001 Journal Article Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structuresLiu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C and Zou, J (2001). Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures. Journal of Nanoscience And Nanotechnology, 1 (4), 389-392. doi: 10.1166/jnn.2001.064 |
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2000 Journal Article Ion-beam-induced dissociation and bubble formation in GaNKucheyev, S. O., Williams, J. S., Zou, J., Jagadish, C. and Li, G. (2000). Ion-beam-induced dissociation and bubble formation in GaN. Applied Physics Letters, 77 (22), 3577-3579. doi: 10.1063/1.1330221 |
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2000 Journal Article Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment. Journal of Applied Physics, 88 (9), 5493-5495. doi: 10.1063/1.1318361 |
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2000 Journal Article Distinguishing glide and shuffle types for 60 degrees dislocation in semicoductors by field-emission HREM image processingWang, D, Li, FH and Zou, J (2000). Distinguishing glide and shuffle types for 60 degrees dislocation in semicoductors by field-emission HREM image processing. Ultramicroscopy, 85 (3), 131-139. doi: 10.1016/S0304-3991(00)00053-X |
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2000 Journal Article Ion-beam-induced porosity of GaNKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Craig, V. S. J. and Li, G. (2000). Ion-beam-induced porosity of GaN. Applied Physics Letters, 77 (10), 1455-1457. doi: 10.1063/1.1290722 |
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2000 Journal Article Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structuresLiu, XQ, Li, N, Li, ZF, Lu, W, Shen, SC, Fu, Y, Willander, M, Tan, HH, Jagadish, C and Zou, J (2000). Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 39 (9A), 5124-5127. doi: 10.1143/JJAP.39.5124 |
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2000 Journal Article Damage buildup in GaN under ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Damage buildup in GaN under ion bombardment. Physical Review B, 62 (11), 7510-7522. doi: 10.1103/PhysRevB.62.7510 |
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2000 Journal Article Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wiresZhao, QX, Willander, M, Lu, W, Liu, XQ, Shen, SC, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2000). Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires. Journal of Applied Physics, 88 (5), 2519-2522. doi: 10.1063/1.1287119 |
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2000 Journal Article Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconWong-Leung, J, Fatima, S, Jagadish, C, Fitz Gerald, JD, Chou, CT, Zou, J and Cockayne, DJH (2000). Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon. Journal of Applied Physics, 88 (3), 1312-1318. doi: 10.1063/1.373819 |
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2000 Journal Article Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopyRussell, JJ, Zou, J, Moon, AR and Cockayne, DJH (2000). Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy. Journal of Applied Physics, 88 (3), 1307-1311. doi: 10.1063/1.373818 |
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2000 Journal Article Composition and its impact on shape evolution in dislocated Ge(Si)/Si islandsLiao, X. Z., Zou, J., Cockayne, D. J. H., Jiang, Z. M., Wang, X. and Leon, R. (2000). Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands. Applied Physics Letters, 77 (9), 1304-1306. doi: 10.1063/1.1290384 |
