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2001 Journal Article Ion-beam-induced reconstruction of amorphous GaNKucheyev, S. O., Williams, J. S., Zou, J., Bradby, J. E., Jagadish, C. and Li, G. (2001). Ion-beam-induced reconstruction of amorphous GaN. Physical Review B, 63 (11), 113202-1-113202-4. doi: 10.1103/PhysRevB.63.113202 |
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2001 Journal Article Characterisation of the structure and composition of quantum dotsCockayne, DJH, Lang, C, Liao, XZ and Zou, J (2001). Characterisation of the structure and composition of quantum dots. Electron Microscopy And Analysis 2001 (168), 425-428. |
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2001 Journal Article The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNKucheyev, SO, Williams, JS, Zou, J, Jagadish, C and Li, G (2001). The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN. Nuclear Instruments & Methods In Physics Research Section B-beam Interactions With Materials And Atoms, 178 (1-4), 209-213. doi: 10.1016/S0168-583X(00)00459-6 |
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2000 Journal Article Ion-beam-induced dissociation and bubble formation in GaNKucheyev, S. O., Williams, J. S., Zou, J., Jagadish, C. and Li, G. (2000). Ion-beam-induced dissociation and bubble formation in GaN. Applied Physics Letters, 77 (22), 3577-3579. doi: 10.1063/1.1330221 |
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2000 Journal Article Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment. Journal of Applied Physics, 88 (9), 5493-5495. doi: 10.1063/1.1318361 |
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2000 Journal Article Distinguishing glide and shuffle types for 60 degrees dislocation in semicoductors by field-emission HREM image processingWang, D, Li, FH and Zou, J (2000). Distinguishing glide and shuffle types for 60 degrees dislocation in semicoductors by field-emission HREM image processing. Ultramicroscopy, 85 (3), 131-139. doi: 10.1016/S0304-3991(00)00053-X |
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2000 Journal Article Ion-beam-induced porosity of GaNKucheyev, S. O., Williams, J. S., Jagadish, C., Zou, J., Craig, V. S. J. and Li, G. (2000). Ion-beam-induced porosity of GaN. Applied Physics Letters, 77 (10), 1455-1457. doi: 10.1063/1.1290722 |
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2000 Journal Article Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structuresLiu, XQ, Li, N, Li, ZF, Lu, W, Shen, SC, Fu, Y, Willander, M, Tan, HH, Jagadish, C and Zou, J (2000). Investigation of AlGaAs/GaAs V-grooved quantum wire infrared photodetector structures. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 39 (9A), 5124-5127. doi: 10.1143/JJAP.39.5124 |
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2000 Journal Article Damage buildup in GaN under ion bombardmentKucheyev, SO, Williams, JS, Jagadish, C, Zou, J and Li, G (2000). Damage buildup in GaN under ion bombardment. Physical Review B, 62 (11), 7510-7522. doi: 10.1103/PhysRevB.62.7510 |
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2000 Journal Article Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wiresZhao, QX, Willander, M, Lu, W, Liu, XQ, Shen, SC, Tan, HH, Jagadish, C, Zou, J and Cockayne, DJH (2000). Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires. Journal of Applied Physics, 88 (5), 2519-2522. doi: 10.1063/1.1287119 |
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2000 Journal Article Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconWong-Leung, J, Fatima, S, Jagadish, C, Fitz Gerald, JD, Chou, CT, Zou, J and Cockayne, DJH (2000). Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon. Journal of Applied Physics, 88 (3), 1312-1318. doi: 10.1063/1.373819 |
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2000 Journal Article Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopyRussell, JJ, Zou, J, Moon, AR and Cockayne, DJH (2000). Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy. Journal of Applied Physics, 88 (3), 1307-1311. doi: 10.1063/1.373818 |
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2000 Journal Article Composition and its impact on shape evolution in dislocated Ge(Si)/Si islandsLiao, X. Z., Zou, J., Cockayne, D. J. H., Jiang, Z. M., Wang, X. and Leon, R. (2000). Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands. Applied Physics Letters, 77 (9), 1304-1306. doi: 10.1063/1.1290384 |
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2000 Journal Article Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dotsLobo, C, Perret, N, Morris, D, Zou, J, Cockayne, DJH, Johnston, MB, Gal, M and Leon, R (2000). Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots. Physical Review B, 62 (4), 2737-2742. doi: 10.1103/PhysRevB.62.2737 |
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2000 Journal Article Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wireFu, Y, Willander, M, Lu, W, Liu, XQ, Shen, SC, Jagadish, C, Gal, M, Zou, J and Cockayne, DJH (2000). Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire. Physical Review B, 61 (12), 8306-8311. doi: 10.1103/PhysRevB.61.8306 |
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2000 Journal Article Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)Leon, R., Wellman, J., Liao, X. Z., Zou, J. and Cockayne, D. J. H. (2000). Adatom condensation and quantum dot sizes in InGaAs/GaAs (001). Applied Physics Letters, 76 (12), 1558-1560. doi: 10.1063/1.126095 |
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2000 Journal Article Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealingLiu, XQ, Lu, W, Chen, XS, Shen, SC, Tan, HH, Yuan, S, Jagadish, C, Johnston, MB, Dao, LV, Gal, M, Zou, J and Cockayne, DJH (2000). Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing. Journal of Applied Physics, 87 (3), 1566-1568. doi: 10.1063/1.372051 |
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2000 Conference Publication Ion-implanted GaAs for ultrafast saturable absorber applicationsLederer, MJ, Luther-Davies, B, Tan, HH, Jagadish, C, Haiml, M, Siegner, U, Keller, U, Zou, J and Cockayne, DJH (2000). Ion-implanted GaAs for ultrafast saturable absorber applications. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE. doi: 10.1109/SIM.2000.939213 |
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2000 Conference Publication HREM investigation of planar defects in ion-implanted GaNZou, J., Wang, Y. G., Kucheyev, S. O., Williams, J. S., Jagadish, C. and Li, G. (2000). HREM investigation of planar defects in ion-implanted GaN. COMMAD 2002: Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, 11-13 December, 2000. |
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2000 Conference Publication Transmission electron microscopy investigation of semiconductor quantum dotsLiao, XZ, Zou, J and Cockayne, DJH (2000). Transmission electron microscopy investigation of semiconductor quantum dots. 11th International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra Australia, Jul 03-07, 2000. NEW YORK: IEEE. doi: 10.1109/SIM.2000.939230 |
