Interlayer magnetoresistance of strongly correlated electron materials (2010-2012)
Abstract
Aims. To characterise, model, and understand advanced materials whose electrical resistance is dramatically changed by a magnetic field. Significance. This is a fundamental scientific challenge and is technologically important because the materials could be the basis of next-generation computer memories. This research will capitalise on recent major advances, both theoretical and experimental, by the Chief and Partner Investigator, respectively. Outcomes. The project will elucidate how a new quantum state of matter (the pseudogap state) determines the magnetoresistive properties of a diverse range of layered metals.
