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2008 Journal Article Growth of single-crystalline tungsten nanowires by an alloy-catalyzed method at 850 degrees CWang, S.L., He, Y.H., Xu, J., Jiang, Y., Huang, B.Y., Zou, J., Wang, Y., Liu, C.T. and Liaw, P. K. (2008). Growth of single-crystalline tungsten nanowires by an alloy-catalyzed method at 850 degrees C. Journal of Materials Research, 23 (1), 72-77. doi: 10.1557/JMR.2008.0033 |
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2008 Conference Publication Optical properties of single InP and GaAs nanowire heterostructuresJackson, H. E., Perera, S., Fickenscher, M. A., Smith, L. M., Yarrison-Rice, J. M., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C., Zhang, X. and Zou, J. (2008). Optical properties of single InP and GaAs nanowire heterostructures. 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008, Newport Beach, CA United States, 9-13 November 2008. Piscataway, NJ United States: I E E E. doi: 10.1109/LEOS.2008.4688673 |
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2008 Conference Publication Deformation of monocrystalline silicon under nanoscratchingWu, Y., Huang, H, and Zou, J, (2008). Deformation of monocrystalline silicon under nanoscratching. Switzerland: Trans Tech Publications Ltd.. |
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2008 Conference Publication Direct evidence of a nanosized high pressure phase of silicon during nanogrindingHuang, H., Wang, B. L., Wang, Y., Wu, Y. Q., Zhou, L. and Zou, J. (2008). Direct evidence of a nanosized high pressure phase of silicon during nanogrinding. International Conference On Nanoscience and Nanotechnology (ICONN 2008), Melbourne, Australia, 25-29 February 2008. |
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2008 Conference Publication Growth, structural and optical properties of high quality gaAs nanowires for optoelectronicsJoyce, Hannah J., Gao, Qiang, Kim, Yong, Tan, H. Hoe, Jagadish, Chennupati, Zhang, Xin, Guo, Yanan, Zou, Jin, Fickenscher, Melodie A., Perera, Saranga, Hoang, Thang B., Smith, Leigh M., Jackson, Howard E. and Yarrison-Rice, Jan M. (2008). Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, Arlington, TX United States, 18-21 August 2008. Piscataway, NJ United States: I E E E. doi: 10.1109/NANO.2008.25 |
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2008 Conference Publication Structural investigation of GeMn thin films grown on Ge and SiHan, X. H., Wang, K. L., Wang, Y., Zhao, Z. M., Zhou, X. Y. and Zou, J. (2008). Structural investigation of GeMn thin films grown on Ge and Si. Asia Pacific Microwave Conference 2008, Hong Kong; Macau, China, 16-19 December; 19-20, December 2008. |
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2008 Journal Article Oxygen-vacancy ordering in lanthanide-doped ceria: Dopant-type dependence and structure modelOu, Ding Rong, Mori, Toshouki, Ye, Fei, Zou, Jin, Auchterlonie, Graeme and Drennan, John (2008). Oxygen-vacancy ordering in lanthanide-doped ceria: Dopant-type dependence and structure model. Physical Review B, 77 (2) 024108, 024108-024108. doi: 10.1103/PhysRevB.77.024108 |
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2008 Conference Publication Failure and formation of axial nanowire heterostructures in vapor-liquid-solid growthPaladugu, M., Zou, J., Guo, Y.-N., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C. and Kim, Y. (2008). Failure and formation of axial nanowire heterostructures in vapor-liquid-solid growth. 2007 MRS Fall Meeting, Boston, MA, USA, 26-30 November, 2007. Warrendale, PA United States: Materials Research Society. doi: 10.1557/PROC-1058-JJ01-09 |
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2008 Conference Publication Mn distribution in GeMn thin films grown on Ge and Si substratesWang, Y., Zou, J., Zhao, Z. M., Han, X. H., Zhou, X. Y. and Kang, L. (2008). Mn distribution in GeMn thin films grown on Ge and Si substrates. International Union of Materials Research Societies - International Conference on Electronic Materials (IUMRS-ICEM 2008), Sydney, Australia, 28 July - 1 August 2008. Materials Research Society. |
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2008 Conference Publication Growth behavior of epitaxial semiconductor axial nanowire heterostructuresZou, J., Paladugu, M., Guo, Y. N., Zhang, X., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C. and Kim, Y. (2008). Growth behavior of epitaxial semiconductor axial nanowire heterostructures. Conference on Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008, Sydney, Australia, 28 July-1 September 2008. Piscataway, NJ, United States: IEEE. doi: 10.1109/COMMAD.2008.4802094 |
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2007 Journal Article Metallic and Carbon Nanotube-Catalyzed Coupling of Hydrogenation in MagnesiumYao, Xiangdong, Wu, Chengzhang, Du, Aijun, Zou, Jin, Zhu, Zhonghua, Wang, Ping, Cheng, Huiming, Smith, Sean and Lu, Gaoqing (2007). Metallic and Carbon Nanotube-Catalyzed Coupling of Hydrogenation in Magnesium. Journal of The American Chemical Society, 129 (50), 15650-15654. doi: 10.1021/ja0751431 |
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2007 Journal Article Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrateWang, Y., Wang, X. N., Mei, Z. X., Du, X. L., Zou, J., Jia, J. F., Xue, Q. K., Zhang, X. N. and Zhang, Z. (2007). Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrate. Journal of Applied Physics, 102 (12) 126102, 126102.1-126102.3. doi: 10.1063/1.2821916 |
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2007 Journal Article Siliceous nanopods from a compromised dual-templating approachYang, Sui, Zhou, Xufeng, Yuan, Pei, Yu, Meihua, Xie, Songhai, Zou, Jin, Lu, Gao Qing and Yu, Chengzhong (2007). Siliceous nanopods from a compromised dual-templating approach. Angewandte Chemie (International Edition), 46 (45), 8579-8582. doi: 10.1002/anie.200703628 |
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2007 Journal Article Fabrication of Ti-Al micro/nanometer-sized porous alloys through the Kirkendall effectHe, Y., Jiang, Y., Xu, N., Zou, J., Huang, B., Liu, C. T. and Liaw, P. K. (2007). Fabrication of Ti-Al micro/nanometer-sized porous alloys through the Kirkendall effect. Advanced Materials, 19 (16), 2102-2106. doi: 10.1002/adma.200602398 |
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2007 Journal Article Compositional and valent state inhomogeneities and ordering of oxygen vacancies in terbium-doped ceriaYe, F., Mori, T., Ou, D.R., Zou, J., Auchterlonie, G. J. and Drennan, J. (2007). Compositional and valent state inhomogeneities and ordering of oxygen vacancies in terbium-doped ceria. Journal of Applied Physics, 101 (11) 113528, 113528 -1-113528 - 5. doi: 10.1063/1.2738409 |
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2007 Journal Article Microstructural characterization of terbium-doped ceriaYe, F., Mori, T., Ou, D. R., Zou, J. and Drennan, J. (2007). Microstructural characterization of terbium-doped ceria. Materials Research Bulletin, 42 (5), 943-949. doi: 10.1016/j.materresbull.2006.08.007 |
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2007 Journal Article Growth mechanism of truncated triangular III-V nanowiresZou, Jin, Paladugu, Mohanchand, Wang, Hui, Auchterlonie, Graeme J., Guo, Ya-Nan, Kim, Yong, Gao, Qiang, Joyce, Hannah J., Tan, H. Hoe and Jagadish, Chennupati (2007). Growth mechanism of truncated triangular III-V nanowires. Small, 3 (3), 389-393. doi: 10.1002/smll.200600503 |
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2007 Journal Article Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructuresPaladugu, M., Zou, J., Guo, Y. N., Auchterlonie, G. J., Joyce, H. J., Gao, Q., Tan, H. H., Jagadish, C. and Kim, Y. (2007). Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures. Small, 3 (11), 1873-1877. doi: 10.1002/smll.200700222 |
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2007 Journal Article Shape preservation of self-assembled SiGe quantum rings during Si cappingLi, FH, Tao, ZS, Qin, J, Wu, YQ, Zou, J, Lu, F, Fan, YL and Jiang, ZM (2007). Shape preservation of self-assembled SiGe quantum rings during Si capping. Nanotechnology, 18 (11) 115708, 115708-1-115708-5. doi: 10.1088/0957-4484/18/11/115708 |
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2007 Conference Publication Strain relaxation in GaSb/GaAs nanowire heterostructuresGuo, Y.N., Zou, J., Paladugu, M., Gao, Q., Tan2, H.H. and Jagadish, C. (2007). Strain relaxation in GaSb/GaAs nanowire heterostructures. Materials Today Asia, 2007, Beijing, China, 3-5 September, 2007. |
