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2015 Journal Article Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistorsUllah, Mujeeb, Armin, Ardalan, Tandy, Kristen, Yambem, Soniya D., Burn, Paul L., Meredith, Paul and Namdas, Ebinazar B. (2015). Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors. Scientific Reports, 5 (Art No.: 8818) 8818, 8818. doi: 10.1038/srep08818 |
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2015 Journal Article High-performance, solution-processed non-polymeric organic photodiodesKim, Il Ku, Pal, Bhola N., Ullah, Mujeeb, Burn, Paul L., Lo, Shih-Chun, Meredith, Paul and Namdas, Ebinazar B. (2015). High-performance, solution-processed non-polymeric organic photodiodes. Advanced Optical Materials, 3 (1), 50-56. doi: 10.1002/adom.201400385 |
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2015 Journal Article Photodiodes: high-performance, solution-processed non-polymeric organic photodiodes (Advanced Optical Materials 1/2015)Kim, Il Ku, Pal, Bhola N., Ullah, Mujeeb, Burn, Paul L., Lo, Shih-Chun, Meredith, Paul and Namdas, Ebinazar B. (2015). Photodiodes: high-performance, solution-processed non-polymeric organic photodiodes (Advanced Optical Materials 1/2015). Advanced Optical Materials, 3 (1), 49-49. doi: 10.1002/adom.201570005 |
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2014 Journal Article High mobility solution-processed hybrid light emitting transistorsWalker, Bright, Ullah, Mujeeb, Chae, Gil Jo, Burn, Paul L., Cho, Shinuk, Kim, Jin Young, Namdas, Ebinazar B. and Seo, Jung Hwa (2014). High mobility solution-processed hybrid light emitting transistors. Applied Physics Letters, 105 (18) 183302, 183302-1-183302-4. doi: 10.1063/1.4900933 |
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2014 Journal Article All solution-processed, hybrid light emitting field-effect transistorsMuhieddine, Khalid, Ullah, Mujeeb, Pal, Bhola N., Burn, Paul and Namdas, Ebinazar B. (2014). All solution-processed, hybrid light emitting field-effect transistors. Advanced Materials, 26 (37), 6410-6415. doi: 10.1002/adma.201400938 |
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2014 Journal Article High-mobility, heterostructure light-emitting transistors and complementary invertersUllah, Mujeeb, Tandy, Kristen, Li, Jun, Shi, Zugui, Burn, Paul L., Meredith, Paul and Namdas, Ebinazar B. (2014). High-mobility, heterostructure light-emitting transistors and complementary inverters. ACS Photonics, 1 (10), 954-959. doi: 10.1021/ph500300n |
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2014 Journal Article Thick junction broadband organic photodiodesArmin, Ardalan, Hambsch, Mike, Kim, Il Ku, Burn, Paul L., Meredith, Paul and Namdas, Ebinazar B. (2014). Thick junction broadband organic photodiodes. Laser and Photonics Reviews, 8 (6), 924-932. doi: 10.1002/lpor.201400081 |
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2014 Journal Article Dynamics of charge generation and transport in polymer-fullerene blends elucidated using a PhotoFET architecturePandey, Ajay K., Aljada, Muhsen, Pivrikas, Almantas, Velusamy, Marappan, Burn, Paul L., Meredith, Paul and Namdas, Ebinazar B. (2014). Dynamics of charge generation and transport in polymer-fullerene blends elucidated using a PhotoFET architecture. ACS Photonics, 1 (2), 114-120. doi: 10.1021/ph400047b |
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2014 Journal Article ITO-free top emitting organic light emitting diodes with enhanced light out-couplingYambem, Soniya D., Ullah, Mujeeb, Tandy, Kristen, Burn, Paul L. and Namdas, Ebinazar B. (2014). ITO-free top emitting organic light emitting diodes with enhanced light out-coupling. Laser and Photonics Reviews, 8 (1), 165-171. doi: 10.1002/lpor.201300148 |
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2013 Journal Article Unlocking the full potential of light emitting field-effect transistors by engineering charge injection layersTandy, Kristen, Ullah, Mujeeb, Burn, Paul L., Meredith, Paul and Namdas, Ebinazar B. (2013). Unlocking the full potential of light emitting field-effect transistors by engineering charge injection layers. Organic Electronics, 14 (11), 2953-2961. doi: 10.1016/j.orgel.2013.08.013 |
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2013 Journal Article Simultaneous enhancement of brightness, efficiency, and switching in RGB organic light emitting transistorsUllah, Mujeeb, Tandy, Kristen, Yambem, Soniya D., Aljada, Muhsen, Burn, Paul L., Meredith, Paul and Namdas, Ebinazar B. (2013). Simultaneous enhancement of brightness, efficiency, and switching in RGB organic light emitting transistors. Advanced Materials, Early View (43), 1-6. doi: 10.1002/adma.201302649 |
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2013 Journal Article Channel II photocurrent quantification in narrow optical gap polymer-fullerene solar cells with complimentary acceptor absorptionZhang, Yuliang, Pandey, Ajay K., Tandy, Kristen, Dutta, Gitish K., Burn, Paul L., Meredith, Paul, Namdas, Ebinazar B. and Patil, Satish (2013). Channel II photocurrent quantification in narrow optical gap polymer-fullerene solar cells with complimentary acceptor absorption. Applied Physics Letters, 102 (22) 223302, 223302. doi: 10.1063/1.4808386 |
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2013 Journal Article Ordered polymer nanofibers enhance output brightness in bilayer light-emitting field-effect transistorsHsu, Ben B. Y., Seifter, Jason, Takacs, Christopher J., Zhong, Chengmei, Tseng, Hsin-Rong, Samuel, Ifor D. W., Namdas, Ebinazar B., Bazan, Guillermo C., Fei, Huang, Cao, Yong and Heeger, Alan J. (2013). Ordered polymer nanofibers enhance output brightness in bilayer light-emitting field-effect transistors. ACS Nano, 7 (3), 2344-2351. doi: 10.1021/nn305566u |
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2012 Journal Article A new diketopyrrolopyrrole-based co-polymer for ambipolar field-effect transistors and solar cellsTandy, Kristen, Dutta, Gitish K., Zhang, Yuliang, Venkatramaiah, N., Aljada, Muhsen, Burn, Paul L., Meredith, Paul, Namdas, Ebinazar B. and Patil, Satish (2012). A new diketopyrrolopyrrole-based co-polymer for ambipolar field-effect transistors and solar cells. Organic Electronics, 13 (10), 1981-1988. doi: 10.1016/j.orgel.2012.05.046 |
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2012 Journal Article Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devicesChapler, B. C., Mack, S., Ju, L., Elson, T. W., Boudouris, B. W., Namdas, E., Yuen, J. D., Heeger, A. J., Samarth, N., Di Ventra, M., Segalman, R. A., Awschalom, D. D., Wang, F. and Basov, D. N. (2012). Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices. Physical Review B, 86 (16) 165302. doi: 10.1103/PhysRevB.86.165302 |
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2012 Journal Article Structured-gate organic field-effect transistorsAljada, Muhsen, Pandey, Ajay K., Velusamy, Marappan, Burn, Paul L., Meredith, Paul and Namdas, Ebinazar B. (2012). Structured-gate organic field-effect transistors. Journal of Physics D: Applied Physics, 45 (22) 225105, 225105. doi: 10.1088/0022-3727/45/22/225105 |
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2012 Journal Article Control of efficiency, brightness, and recombination zone in light-emitting field effect transistorsHsu, Ben B.Y., Duan, Chunhui, Namdas, Ebinazar B., Gutacker, Andrea, Yuen, Jonathan D., Huang, Fei, Cao, Yong, Bazan, Guillermo C., Samuel, Ifor D. W. and Heeger, Alan J. (2012). Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors. Advanced Materials, 24 (9), 1171-1175. doi: 10.1002/adma.201103513 |
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2011 Journal Article Solution-processed organic light-emitting transistors incorporating conjugated polyelectrolytesSeo, Jung Hwa, Namdas, Ebinazar B., Gutacker, Andrea, Heeger, Alan J. and Bazan, Guillermo C. (2011). Solution-processed organic light-emitting transistors incorporating conjugated polyelectrolytes. Advanced Functional Materials, 21 (19), 3667-3672. doi: 10.1002/adfm.201100682 |
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2011 Journal Article Synthesis and self-assembly of donor-acceptor-donor based oligothiophenes and their optoelectronic propertiesSiram, Raja Bhaskar Kanth, Tandy, Kristan, Horecha, Marta, Formanek, Petr, Stamm, Manfred, Gevorgyan, Suren, Krebs, Frederik C., Kiriy, Anton, Meredith, Paul, Burn, Paul L., Namdas, Ebinazar B. and Patil, Satish (2011). Synthesis and self-assembly of donor-acceptor-donor based oligothiophenes and their optoelectronic properties. Journal of Physical Chemistry C, 115 (29), 14369-14376. doi: 10.1021/jp204271c |
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2011 Journal Article Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistorsNamdas, Ebinazar B., Hsu, Ben B. Y., Yuen, Jonathan D., Samuel, Ifor D. W. and Heeger, Alan J. (2011). Optoelectronic gate dielectrics for high brightness and high-efficiency light-emitting transistors. Advanced Materials, 23 (20), 2353-2356. doi: 10.1002/adma.201004102 |
