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2014

Journal Article

In situ micro-Raman studies of laser-induced bismuth oxidation reveals metastability of β-Bi2O3 microislands

Steele, J. A. and Lewis, R. A. (2014). In situ micro-Raman studies of laser-induced bismuth oxidation reveals metastability of β-Bi2O3 microislands. Optical Materials Express, 4 (10), 2133-2142. doi: 10.1364/OME.4.002133

In situ micro-Raman studies of laser-induced bismuth oxidation reveals metastability of β-Bi2O3 microislands

2014

Journal Article

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: Optical determination of carrier concentration

Steele, J. A., Lewis, R. A., Henini, M., Lemine, O. M., Fan, D., Mazur, Yu I., Dorogan, V. G., Grant, P. C., Yu, S. Q. and Salamo, G. J. (2014). Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: Optical determination of carrier concentration. Optics Express, 22 (10), 11680-11689. doi: 10.1364/OE.22.011680

Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: Optical determination of carrier concentration

2013

Conference Publication

Optical characterization of novel terahertz emitters

Steele, J. A., Radhanpura, K., Lewis, R. A., Sirbu, L. and Tiginyanu, I. M. (2013). Optical characterization of novel terahertz emitters. doi: 10.1109/IRMMW-THz.2013.6665796

Optical characterization of novel terahertz emitters

2013

Journal Article

Raman scattering studies of strain effects in (100) and (311)B GaAs 1-xBix epitaxial layers

Steele, J. A., Lewis, R. A., Henini, M., Lemine, O. M. and Alkaoud, A. (2013). Raman scattering studies of strain effects in (100) and (311)B GaAs 1-xBix epitaxial layers. Journal of Applied Physics, 114 (19) 193516. doi: 10.1063/1.4831947

Raman scattering studies of strain effects in (100) and (311)B GaAs 1-xBix epitaxial layers

2011

Conference Publication

Optical reflectance studies of GaAs1-xBix

Steele, J. and Lewis, R. A. (2011). Optical reflectance studies of GaAs1-xBix.

Optical reflectance studies of GaAs1-xBix