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1991 Conference Publication A 0.35 mu m CMOS process for fast random logicGuegan, G., Lerme, M., Deleonibus, S., Martin, F., Heitzmann, M., Tedesco, S., Guerin, M., Reimbold, G., Leroux, C., Jaffard, C. and Belleville, M. (1991). A 0.35 mu m CMOS process for fast random logic. Institute of Electrical and Electronics Engineers Inc.. doi: 10.1109/IEDM.1991.235413 |
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1991 Conference Publication A fully scaled 0.5 μm CMOS process for fast random logicLerme, M., Guegan, G., Deléonibus, S., Martin, F., Heitzmann, M., Vinet, F., Jaffard, C., Belleville, M., Guerin, M., Reimbold, G. and Leroux, C. (1991). A fully scaled 0.5 μm CMOS process for fast random logic. IEEE Computer Society. |
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1991 Conference Publication Improvement in dry etching of tungsten featuresHeitzmann, Michel, Laporte, Philippe and Tabouret, Evelyne (1991). Improvement in dry etching of tungsten features. Publ by Int Soc for Optical Engineering. |
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1991 Journal Article A fully scaled 0.5μm CMOS process for fast random logicLerme, M., Guegan, G., Deléonibus, S., Martin, F., Heitzmann, M., Vinet, F., Jaffard, C., Belleville, M., Guerin, M., Reimbold, G. and Leroux, C. (1991). A fully scaled 0.5μm CMOS process for fast random logic. Microelectronic Engineering, 15 (1-4), 257-260. doi: 10.1016/0167-9317(91)90224-2 |
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1989 Conference Publication Field transistors electrical behaviour in double level aluminum interconnect processesDeleonibus, S., Arena, C., Heitzmann, M., Martin, F., Lajzerowicz, J. and Vinet, F. (1989). Field transistors electrical behaviour in double level aluminum interconnect processes. Publ by IEEE. |
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1989 Conference Publication Comparison between different intermetallic dielectric processes and consequences on field transistor behaviourDeleonibus, S., Arena, C., Heitzmann, M., Martin, F., Lajzerowicz, J. and Vinet, F. (1989). Comparison between different intermetallic dielectric processes and consequences on field transistor behaviour. IEEE Computer Society. doi: 10.1007/978-3-642-52314-4_139 |
